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| BFP 193W NPN Silicon RF Transistor * For low noise, high-gain amplifiers up to 2GHz * For linear broadband amplifiers * fT = 8GHz F = 1.3dB at 900MHz ESD: Electrostatic discharge sensitive device, observe handling precaution! Type Marking Ordering Code Pin Configuration BFP 193W RCs Q62702-F1577 1=E 2=C 3=E 4=B Package SOT-343 Maximum Ratings Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Base current Total power dissipation Symbol Values 12 20 20 2 80 10 mW 580 150 - 65 ... + 150 - 65 ... + 150 145 C mA Unit V VCEO VCES VCBO VEBO IC IB Ptot Tj TA Tstg 1) TS 66 C Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS K/W 1) TS is measured on the collector lead at the soldering point to the pcb. Semiconductor Group 1 Dec-12-1996 BFP 193W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. DC Characteristics Collector-emitter breakdown voltage Values typ. max. Unit V(BR)CEO 12 100 - V A 100 nA 100 A 1 50 200 IC = 1 mA, IB = 0 Collector-emitter cutoff current ICES ICBO IEBO hFE VCE = 20 V, VBE = 0 Collector-base cutoff current VCB = 10 V, IE = 0 Emitter-base cutoff current VEB = 1 V, IC = 0 DC current gain IC = 30 mA, VCE = 8 V Semiconductor Group 2 Dec-12-1996 BFP 193W Electrical Characteristics at TA = 25C, unless otherwise specified. Parameter Symbol min. AC Characteristics Transition frequency Values typ. max. Unit fT 6 8 0.63 0.33 1.8 - GHz pF 0.9 dB 1.3 2.1 - IC = 50 mA, VCE = 8 V, f = 500 MHz Collector-base capacitance Ccb Cce - VCB = 10 V, f = 1 MHz Collector-emitter capacitance VCE = 10 V, f = 1 MHz Emitter-base capacitance Ceb - VEB = 0.5 V, f = 1 MHz Noise figure F IC = 10 mA, VCE = 8 V, ZS = ZSopt f = 900 MHz f = 1.8 GHz Power gain 2) Gma IC = 30 mA, VCE = 8 V, ZS = ZSopt ZL = ZLopt f = 900 MHz f = 1.8 GHz Transducer gain |S21e|2 15 9 19.5 13 - IC = 30 mA, VCE = 8 V, ZS =ZL= 50 f = 900 MHz f = 1.8 GHz 2) Gma = |S21/S12| (k-(k2-1)1/2) Semiconductor Group 3 Dec-12-1996 BFP 193W SPICE Parameters (Gummel-Poon Model, Berkeley-SPICE 2G.6 Syntax) : Transistor Chip Data IS = 0.2738 fA VAF = NE = VAR = NC = RBM = CJE = TF = ITF = VJC = TR = MJS = XTI = 24 1.935 3.8742 0.94371 1.8368 1.1824 18.828 0.96893 1.1828 1.0037 0 3 V V fF ps mA V ns - BF = IKF = BR = IKR = RB = RE = VJE = XTF = PTF = MJC = CJS = XTB = FC = 125 0.26949 14.267 1 0.76534 0.70276 0.69477 0 0.30002 0 0 0.72063 A V deg fF - NF = ISE = NR = ISC = IRB = RC = MJE = VTF = CJC = XCJC = VJS = EG = TNOM 0.95341 10.627 1.4289 0.91763 0.11938 0.48654 0.8 935.03 0.75 1.11 300 fA mA V fF V eV K 0.037925 A 0.037409 fA 0.053563 - All parameters are ready to use, no scalling is necessary. Extracted on behalf of SIEMENS Small Signal Semiconductors by: Institut fur Mobil-und Satellitenfunktechnik (IMST) (c) 1996 SIEMENS AG Package Equivalent Circuit: LBI = LBO = LEI = LEO = LCI = LCO = CBE = CCB = CCE = 0.43 0.47 0.26 0.12 0.06 0.36 68 46 232 nH nH nH nH nH nH fF fF fF Valid up to 6 GHz For examples and ready to use parameters please contact your local Siemens distributor or sales office to obtain a Siemens CD-ROM or see Internet: http://www.siemens.de/Semiconductor/products/35/35.htm Semiconductor Group 4 Dec-12-1996 BFP 193W Total power dissipation Ptot = f (TA*, TS) * Package mounted on epoxy 600 mW 500 Ptot 450 400 350 300 250 TS TA 200 150 100 50 0 0 20 40 60 80 100 120 C 150 TA ,TS Permissible Pulse Load RthJS = f (tp) Permissible Pulse Load Ptotmax/PtotDC = f (tp) 10 3 10 2 K/W RthJS 10 2 Ptotmax/PtotDC D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 10 1 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 10 0 -7 10 10 -6 10 -5 10 -4 10 -3 10 -2 10 s 10 tp -1 0 Semiconductor Group 5 Dec-12-1996 BFP 193W Collector-base capacitance Ccb = f (VCB) VBE = vbe = 0, f = 1MHz Transition frequency fT = f (IC) VCE = Parameter 1.6 10 GHz pF Ccb 1.2 fT 8 7 8V 5V 1.0 6 3V 5 2V 4 3 0.8 0.6 0.4 2 0.2 0.0 0 4 8 12 16 V 24 1 0 0 10 20 30 40 50 60 70 1V 0.7V VR 80 mA 95 IC Power Gain Gma, Gms = f(IC) f = 0.9GHz VCE = Parameter 22 Power Gain Gma, Gms = f(IC) f = 1.8GHz VCE = Parameter 15 dB dB 13 10V 10V 3V 2V G 18 G 5V 3V 12 11 10 9 16 2V 14 8 7 12 1V 10 0.7V 6 5 4 3 1V 0.7V 8 6 0 10 20 30 40 50 60 70 2 1 0 80 mA 95 IC 0 10 20 30 40 50 60 70 mA 85 IC Semiconductor Group 6 Dec-12-1996 BFP 193W Power Gain Gma, Gms = f(VCE):_____ |S21 |2 = f(VCE):--------- Intermodulation Intercept Point IP3=f(IC) (3rd order, Output, ZS=ZL=50) f = Parameter 22 VCE = Parameter, f = 900MHz 34 IC=30mA dB 8V 0.9GHz dBm G 18 16 0.9GHz 14 1.8GHz 12 10 1.8GHz 8 6 4 2 0 0 2 4 6 8 V 12 IP3 30 5V 28 26 3V 24 22 2V 20 18 16 14 12 0 10 20 1V 30 40 50 60 V CE mA IC 80 Power Gain Gma, Gms = f(f) VCE = Parameter 35 Power Gain |S21|2= f(f) VCE = Parameter 35 IC=30mA dB dB IC=30mA G 25 G 25 20 20 15 15 10 10 10V 1V 0.7V 5 5 0 -5 0.0 10V 2V 1V 0.7V 0 0.0 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 0.5 1.0 1.5 2.0 2.5 GHz f 3.5 Semiconductor Group 7 Dec-12-1996 |
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