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FDS4480
February 2002
FDS4480
40V N-Channel PowerTrench(R) MOSFET
General Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed.
Features
* 10.8 A, 40 V. RDS(ON) = 12 m @ VGS = 10 V * Low gate charge (29 nC) * High performance trench technology for extremely low RDS(ON) * High power and current handling capability
Applications
* DC/DC converter
D D D D SO-8
DD D D
5 6 7
4 3 2 1
Pin 1 SO-8
S S
G SG S S S
8
Absolute Maximum Ratings
Symbol
VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed
TA=25 C unless otherwise noted
o
Parameter
Ratings
40 +30/-20
(Note 1a)
Units
V V A W
10.8 45 2.5 1.4 1.2 -55 to +175
Power Dissipation for Single Operation
(Note 1a) (Note 1b) (Note 1c)
TJ, TSTG
Operating and Storage Junction Temperature Range
C
Thermal Characteristics
RJA RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case
(Note 1a) (Note 1c) (Note 1)
50 125 25
C/W C/W C/W
Package Marking and Ordering Information
Device Marking FDS4480 Device FDS4480 Reel Size 13'' Tape width 12mm Quantity 2500 units
(c)2002 Fairchild Semiconductor Corporation
FDS4480 Rev D (W)
FDS4480
Electrical Characteristics
Symbol
EAS IAS
TA = 25C unless otherwise noted
Parameter
Drain-Source Avalanche Energy Drain-Source Avalanche Current
Test Conditions
Single Pulse, VDD=40V, ID=10.8A
Min
Typ
Max Units
240 10.8 mJ A
Drain-Source Avalanche Ratings (Note 2)
Off Characteristics
BVDSS BVDSS TJ IDSS IGSSF IGSSR Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse
(Note 2)
VGS = 0 V,
ID = 250 A
40 42 1 100 -100
V mV/C A nA nA
ID = 250 A, Referenced to 25C VDS = 32 V, VGS = 30 V, VGS = 0 V VDS = 0 V
VGS = -20 V, VDS = 0 V ID = 250 A
On Characteristics
VGS(th) VGS(th) TJ RDS(on) ID(on) gFS
Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance
VDS = VGS,
2
ID = 250 A, Referenced to 25C VGS = 10 V, ID = 10.8 A VGS = 10 V,ID = 10.8 A, TJ=125C VGS = 10 V, VDS = 10 V, VDS = 5 V ID = 10.8 A 22
3.9 -8 8 13 36
5
V mV/C
12 21
m A S
Dynamic Characteristics
Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance
(Note 2)
VDS = 20 V, f = 1.0 MHz
V GS = 0 V,
1686 384 185
pF pF pF
Switching Characteristics
td(on) tr td(off) tf Qg Qgs Qgd Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge
VDD = 20 V, VGS = 10 V,
ID = 1 A, RGEN = 6
12 9 30 15
22 18 48 27 41
ns ns ns ns nC nC nC
VDS = 20 V, VGS = 10 V
ID = 10.8 A,
29 17 4
FDS4480 Rev D (W)
FDS4480
Electrical Characteristics
Symbol
IS VSD trr Qrr
TA = 25C unless otherwise noted
Parameter
Test Conditions
Min
Typ
Max Units
2.1 A V nS nC
Drain-Source Diode Characteristics and Maximum Ratings
Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward VGS = 0 V, IS = 2.1 A (Note 2) Voltage Diode Reverse Recovery Time IF = 10.8 A, diF/dt = 100 A/s Diode Reverse Recovery Charge 0.7 27 58 1.2
Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design.
a) 50C/W when 2 mounted on a 1in pad of 2 oz copper
b) 105C/W when 2 mounted on a .04 in pad of 2 oz copper
c) 125C/W when mounted on a minimum pad.
Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0%
FDS4480 Rev D (W)
FDS4480
Typical Characteristics
80 70 ID, DRAIN CURRENT (A) 60 50
VGS = 10V
6.0V
RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE
2
5.5V
VGS = 5.0V
1.8 1.6
5.0V
40 30 20 10 0 0 1 2 3 4 VDS, DRAIN TO SOURCE VOLTAGE (V)
5.5V
1.4
6.0V
1.2 1 0.8 0 20 40 I D, DRAIN CURRENT (A) 60 80
4.5V
7.0V
8.0V
10V
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with Drain Current and Gate Voltage.
0.025 RDS(ON), ON-RESISTANCE (OHM)
2 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE 1.8 1.6 1.4 1.2 1 0.8 0.6 0.4 -50 -25 0 25 50 75 100
o
ID = 10.8A VGS = 10V
ID = 5.4A
0.022 0.019
TA = 125 C
0.016 0.013 0.01
o
TA = 25 C
0.007 4 5 6 7 8 9 10
o
125
150
175
TJ, JUNCTION TEMPERATURE ( C)
VGS, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation withTemperature.
80
Figure 4. On-Resistance Variation with Gate-to-Source Voltage.
100
VDS = 5V
ID, DRAIN CURRENT (A) 60
TA = -55 C
o
25 C 125 C
o
o
IS, REVERSE DRAIN CURRENT (A)
VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001
40
20
0 2 3 4 5 6 VGS, GATE TO SOURCE VOLTAGE (V)
0
0.2
0.4
0.6
0.8
1
1.2
VSD, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature.
FDS4480 Rev D (W)
FDS4480
Typical Characteristics
10 VGS, GATE-SOURCE VOLTAGE (V) ID = 10.8A 8 VDS = 10V 20V
CAPACITANCE (pF)
2400 2000
30V 6
f = 1 MHz VGS = 0 V CISS
1600 1200 800
4
2
400
COSS
0 0 5 10 15 20 25 30 35 Qg, GATE CHARGE (nC)
CRSS
0 0 10 20 30 40 VDS, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100 1ms 10ms 100ms 1s 10s 1 VGS = 10V SINGLE PULSE RJA = 125oC/W TA = 25oC 0.01 0.01 DC
P(pk), PEAK TRANSIENT POWER (W) 50
Figure 8. Capacitance Characteristics.
100s ID, DRAIN CURRENT (A) RDS(ON) LIMIT
40
10
SINGLE PULSE RJA = 125C/W TA = 25C
30
20
0.1
10
0.1
1
10
100
0 0.001
0.01
0.1
1 t 1, TIME (sec)
10
100
1000
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum Power Dissipation.
r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE
1
D = 0.5 0.2
RJA(t) = r(t) * R JA RJA = 125 C/W P(pk) t1 t2
SINGLE PULSE
o
0.1
0.1 0.05 0.02 0.01
0.01
TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2
0.001 0.0001
0.001
0.01
0.1
t1, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design.
FDS4480 Rev D (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks.
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
DISCLAIMER
FAST (R) FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM
OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench (R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER (R)
SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET (R)
VCXTM
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or 2. A critical component is any component of a life systems which, (a) are intended for surgical implant into support device or system whose failure to perform can the body, or (b) support or sustain life, or (c) whose be reasonably expected to cause the failure of the life failure to perform when properly used in accordance support device or system, or to affect its safety or with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Rev. H4

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