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| FDW2521C May 2002 FDW2521C Complementary PowerTrench MOSFET General Description This complementary MOSFET device is produced using Fairchild's advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance. Features * Q1: N-Channel 5.5 A, 20 V. RDS(ON) = 21 m @ VGS = 4.5 V RDS(ON) = 35 m @ VGS = 2.5 V Applications * DC/DC conversion * Power management * Load switch * Q2: P-Channel -3.8 A, 20 V. RDS(ON) = 43 m @ VGS = -4.5 V RDS(ON) = 70 m @ VGS = -2.5 V * High performance trench technology for extremely low RDS(ON) Low profile TSSOP-8 package * G2 S2 S2 D2 G1 S1 S1 D1 Pin 1 Q1 Q2 1 2 3 4 8 7 6 5 TSSOP-8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD TJ, TSTG Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed Power Dissipation TA = 25C unless otherwise noted Parameter Q1 20 (Note 1a) Q2 -20 12 -3.8 -30 1.0 0.6 -55 to +150 Units V V A W C 12 5.5 30 (Note 1a) (Note 1b) Operating and Storage Junction Temperature Range Thermal Characteristics RJA Thermal Resistance, Junction-to-Ambient (Note 1a) (Note 1b) 125 208 C/W Package Marking and Ordering Information Device Marking 2521C Device FDW2521C Reel Size 13'' Tape width 12mm Quantity 3000 units 2002 Fairchild Semiconductor Corporation FDW2521C Rev D(W) FDW2521C Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSS TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage (Note 2) Test Conditions VGS = 0 V, ID = 250 A VGS = 0 V, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VDS = 16 V, VGS = 0 V VDS = -16 V, VGS = 0 V VGS = +12 V, VDS = 0 V VGS = +12 V, VDS = 0 V VDS = VGS, ID = 250 A VDS = VGS, ID = -250 A ID = 250 A, Referenced to 25C ID = -250 A, Referenced to 25C VGS = 4.5 V, ID = 5.5 A VGS = 2.5 V, ID = 4.2 A VGS = 4.5 V, ID = 5.5 A, TJ = 125C VGS = -4.5 V, ID = -3.8 A VGS = -2.5 V, ID = -3.0 A VGS = -4.5 V, ID = -3.8 A, TJ = 125C VGS = 4.5 V, VDS = 5 V VGS = -4.5 V, VDS = -5 V VDS = 5 V, ID = 5.5 A VDS = -5 V, ID = -3.5 A Q1: VDS = 10 V, VGS = 0 V, f = 1.0 MHz Q2: VDS = -10 V, VGS = 0 V, f = 1.0 MHz Type Min Typ Max Units Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 20 -20 14 -16 1 -1 +100 +100 0.6 -0.6 0.8 -1.0 -3.2 3.0 17 24 23 36 56 49 1.5 -1.5 V mV/C A nA Off Characteristics On Characteristics VGS(th) VGS(th) TJ RDS(on) Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance V mV/C Q2 21 35 34 43 70 69 m ID(on) gFS On-State Drain Current Forward Transconductance Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 Q1 Q2 30 -15 26 13.2 1082 1030 277 280 130 120 8 11 8 18 24 34 8 34 12 9.7 2 2.2 3 2.4 20 20 27 32 38 55 16 55 17 16 A S Dynamic Characteristics Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Q2: VDS = -5 V, ID = -3.8 A,VGS = -4.5 V Q1: VDS = 10 V, ID = 5.5 A, VGS = 4.5 V pF pF pF Switching Characteristics td(on) tr td(off) tf Qg Qgs Qgd Q1: VDD = 10 V, ID = 1 A, VGS = 4.5 V, RGEN = 6 Q2: VDD = -5 V, ID = -1 A, VGS = -4.5V, RGEN = 6 ns ns ns ns nC nC nC FDW2521C Rev D(W) FDW2521C Electrical Characteristics (continued) Symbol Parameter TA = 25C unless otherwise noted Test Conditions Type Min Typ Max Units Drain-Source Diode Characteristics and Maximum Ratings IS VSD Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage VGS = 0 V, IS = 0.83 A (Note 2) VGS = 0 V, IS = -0.83 A (Note 2) Q1 Q2 Q1 Q2 0.7 -0.7 0.83 -0.83 1.2 -1.2 A V Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) RJA is 125C/W (steady state) when mounted on a 1 inch copper pad on FR-4. b) RJA is 208C/W (steady state) when mounted on a minimum copper pad on FR-4. 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDW2521C Rev D(W) FDW2521C Typical Characteristics: Q1 30 25 ID, DRAIN CURRENT (A) 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 VDS, DRAIN-SOURCE VOLTAGE (V) 3.5V 3.0V 2.5V 2.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = 4.5V 2.5 2 VGS = 2.0V 1.5 2.5V 3.0V 3.5V 4.0V 1 4.5V 0.5 0 5 10 15 20 25 30 ID, DRAIN CURRENT (A) Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.07 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = 5.5A VGS = 4.5V 1.4 ID = 2.8 A 0.06 0.05 0.04 TA = 0.03 0.02 0.01 0 1 2 3 4 5 VGS, GATE TO SOURCE VOLTAGE (V) 125oC 1.2 1 0.8 TA = 25oC 0.6 -50 -25 0 25 50 75 100 o 125 150 TJ, JUNCTION TEMPERATURE ( C) Figure 3. On-Resistance Variation with Temperature. 30 25 C 125oC 20 15 10 5 0 0.5 1 1.5 2 2.5 3 VGS, GATE TO SOURCE VOLTAGE (V) o Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 IS, REVERSE DRAIN CURRENT (A) VDS = 5V 25 ID, DRAIN CURRENT (A) TA = -55oC VGS = 0V 10 TA = 125oC 1 25oC 0.1 -55oC 0.01 0.001 0.0001 0 0.2 0.4 0.6 0.8 1 1.2 VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2521C Rev D(W) FDW2521C Typical Characteristics: Q1 5 VGS, GATE-SOURCE VOLTAGE (V) ID = 5.5A 4 15V 3 CAPACITANCE (pF) VDS = 5V 10V 1800 1500 CISS 1200 900 600 COSS 300 CRSS 0 0 2 4 6 8 10 12 14 0 4 8 12 16 20 Qg, GATE CHARGE (nC) VDS, DRAIN TO SOURCE VOLTAGE (V) f = 1MHz VGS = 0 V 2 1 0 Figure 7. Gate Charge Characteristics. 100 P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID, DRAIN CURRENT (A) 10 1s 1 DC 0.1 VGS = 4.5V SINGLE PULSE RJA = 250oC/W TA = 25oC 0.01 0.1 1 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) 10s 10ms 100ms 1ms 50 Figure 8. Capacitance Characteristics. 40 SINGLE PULSE RJA = 250C/W TA = 25C 30 20 10 0 0.001 0.01 0.1 1 t1, TIME (sec) 10 100 1000 Figure 9. Maximum Safe Operating Area. Figure 10. Single Pulse Maximum Power Dissipation. FDW2521C Rev D(W) FDW2521C Typical Characteristics: Q2 30 VGS = -4.5V 24 -4.0V -3.5V -3.0V 1.6 VGS = -2.5V 1.4 18 -2.5V 12 1 -2.0V 1.2 -3.0V -3.5V -4.0V 6 -4.5V 0 0 1 2 3 4 5 0.8 0 5 10 15 20 25 30 -VDS, DRAIN-SOURCE VOLTAGE (V) - ID, DRAIN CURRENT (A) Figure 11. On-Region Characteristics. Figure 12. On-Resistance Variation with Drain Current and Gate Voltage. 0.15 1.6 ID = -3.8A VGS = -4.5V 1.4 ID = -1.9A 0.12 1.2 0.09 TA = 125 C o 1 0.06 TA = 25 C o 0.8 0.03 0.6 -50 -25 0 25 50 75 100 o 0 125 150 1.5 2 2.5 3 3.5 4 4.5 5 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 13. On-Resistance Variation with Temperature. 30 VDS = -5.0V 24 125 C 18 o Figure 14. On-Resistance Variation with Gate-to-Source Voltage. 100 TA = -55 C o VGS = 0V 25 C o 10 1 0.1 -55 C o TA = 125 C 25 C o o 12 0.01 0.001 0.0001 0.4 1.3 2.2 3.1 4 0 0.2 0.4 0.6 0.8 1 1.2 1.4 6 0 -VGS, GATE TO SOURCE VOLTAGE (V) -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 15. Transfer Characteristics. Figure 16. Body Diode Forward Voltage Variation with Source Current and Temperature. FDW2521C Rev D(W) FDW2521C Typical Characteristics: Q2 5 ID = -3.8A 4 -15V 3 VDS = -5V -10V 1800 1500 1200 CISS 900 f = 1MHz VGS = 0 V 2 600 COSS 1 300 CRSS 0 0 3 6 Qg, GATE CHARGE (nC) 9 12 0 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) Figure 17. Gate Charge Characteristics. 100 100s 20 Figure 18. Capacitance Characteristics. P(pk), PEAK TRANSIENT POWER (W) ID, DRAIN CURRENT (A) 10 RDS(ON) LIMIT 1ms 10ms 100ms 1s 10s DC 15 SINGLE PULSE RJA = 250C/W TA = 25C 1 VGS = -4.5V SINGLE PULSE RJA = 250oC/W TA = 25oC 0.01 0.01 10 0.1 5 0.1 1 10 100 0 0.01 0.1 1 t1, TIME (sec) 10 100 VDS, DRAIN-SOURCE VOLTAGE (V) Figure 19. Maximum Safe Operating Area. Figure 20. Single Pulse Maximum Power Dissipation. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 1 D = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 RJA(t) = r(t) + RJA RJA = 250 C/W P(pk) t1 t2 TJ - TA = P * RJA(t) Duty Cycle, D = t1 / t2 0.01 SINGLE PULSE 0.001 0.0001 0.001 0.01 0.1 t1, TIME (sec) 1 10 100 1000 Figure 21. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1b. Transient thermal response will change depending on the circuit board design. FDW2521C Rev D(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACEx Bottomless CoolFET CROSSVOLT DenseTrench DOME EcoSPARK E2CMOSTM EnSignaTM FACT FACT Quiet Series DISCLAIMER FAST a FASTr FRFET GlobalOptoisolator GTO HiSeC I2C ISOPLANAR LittleFET MicroFET MicroPak MICROWIRE OPTOLOGIC a OPTOPLANAR PACMAN POP Power247 PowerTrench a QFET QS QT Optoelectronics Quiet Series SILENT SWITCHER a UHC SMART START UltraFET a SPM VCX STAR*POWER Stealth SuperSOT-3 SuperSOT-6 SuperSOT-8 SyncFET TinyLogic TruTranslation STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILDS PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production Rev. H5 |
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