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| PD -91859 IRF7342 HEXFET(R) Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description l l S1 G1 S2 G2 1 8 D1 D1 D2 D2 2 7 VDSS = -55V 3 6 4 5 RDS(on) = 0.105 T op V iew Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space. The package is designed for vapor phase, infra red, or wave soldering techniques. Power dissipation of greater than 0.8W is possible in a typical PCB mount application. S O -8 Absolute Maximum Ratings Parameter VDS ID @ TC = 25C ID @ TC = 70C IDM PD @TC = 25C PD @TC = 70C VGS VGSM EAS dv/dt TJ, TSTG Drain- Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Power Dissipation Power Dissipation Linear Derating Factor Gate-to-Source Voltage Gate-to-Source Voltage Single Pulse tp<10s Single Pulse Avalanche Energy Peak Diode Recovery dv/dt Junction and Storage Temperature Range Max. -55 -3.4 -2.7 -27 2.0 1.3 0.016 20 30 114 5.0 -55 to + 150 Units V A W W/C V V V/ns C Thermal Resistance Parameter RJA Maximum Junction-to-Ambient Typ. --- Max. 62.5 Units C/W www.irf.com 1 2/24/99 IRF7342 Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)DSS/TJ Parameter Drain-to-Source Breakdown Voltage Breakdown Voltage Temp. Coefficient Static Drain-to-Source On-Resistance Gate Threshold Voltage Forward Transconductance Drain-to-Source Leakage Current Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Total Gate Charge Gate-to-Source Charge Gate-to-Drain ("Miller") Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance RDS(on) VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Min. -55 --- --- --- -1.0 3.3 --- --- --- --- --- --- --- --- --- --- --- --- --- --- Typ. Max. Units Conditions --- --- V VGS = 0V, ID = -250A -0.054 --- V/C Reference to 25C, ID = -1mA 0.095 0.105 VGS = -10V, ID = -3.4A 0.150 0.170 VGS = -4.5V, I D = -2.7A --- --- V VDS = VGS, ID = -250A --- --- S VDS = -10V, ID = -3.1A --- -2.0 VDS = -55V, VGS = 0V A --- -25 VDS = -55V, VGS = 0V, TJ = 55C --- -100 VGS = -20V nA --- 100 VGS = 20V 26 38 ID = -3.1A 3.0 4.5 nC VDS = -44V 8.4 13 VGS = -10V, See Fig. 10 14 22 VDD = -28V 10 15 ID = -1.0A ns 43 64 RG = 6.0 22 32 RD = 16, 690 --- VGS = 0V 210 --- pF VDS = -25V 86 --- = 1.0MHz, See Fig. 9 Source-Drain Ratings and Characteristics IS ISM VSD trr Qrr Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Diode Forward Voltage Reverse Recovery Time Reverse RecoveryCharge Min. Typ. Max. Units --- --- --- --- --- --- --- --- 54 85 -2.0 A -27 -1.2 80 130 V ns nC Conditions MOSFET symbol showing the G integral reverse p-n junction diode. TJ = 25C, IS = -2.0A, VGS = 0V TJ = 25C, IF = -2.0A di/dt = -100A/s D S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD -3.4A, di/dt -150A/s, VDD V(BR)DSS, TJ 150C Starting TJ = 25C, L = 20mH RG = 25, IAS = -3.4A. (See Figure 8) Pulse width 300s; duty cycle 2%. When mounted on 1 inch square copper board, t<10 sec 2 www.irf.com IRF7342 100 -I D , Drain-to-Source Current (A) -I D , Drain-to-Source Current (A) VGS -15V -12V -10V -8.0V -6.0V -4.5V -4.0V -3.5V BOTTOM -3.0V TOP 100 VGS -15V -12V -10V -8.0V -4.5V -6.0V -4.0V -3.5V BOTTOM -3.0V TOP 10 10 -3.0V 1 -3.0V 1 0.1 0.1 20s PULSE WIDTH TJ = 25 C 1 10 100 0.1 0.1 20s PULSE WIDTH TJ = 150 C 1 10 100 -VDS , Drain-to-Source Voltage (V) -VDS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 100 100 -I D , Drain-to-Source Current (A) -ISD , Reverse Drain Current (A) TJ = 25 C TJ = 150 C 10 10 TJ = 150 C TJ = 25 C 1 1 3 4 5 V DS = -25V 20s PULSE WIDTH 6 7 0.1 0.2 V GS = 0 V 0.4 0.6 0.8 1.0 1.2 1.4 -VGS , Gate-to-Source Voltage (V) -VSD ,Source-to-Drain Voltage (V) Fig 3. Typical Transfer Characteristics Fig 4. Typical Source-Drain Diode Forward Voltage www.irf.com 3 IRF7342 2.0 1.5 R DS (on), Drain-to-Source On Resistance () ID = -3.4 A 0.240 R DS(on) , Drain-to-Source On Resistance (Normalized) 0.200 VGS = -4.5V 0.160 1.0 0.5 0.120 VGS = -10V 0.0 -60 -40 -20 VGS = -10V 0 20 40 60 80 100 120 140 160 0.080 0 2 4 6 8 10 12 TJ , Junction Temperature ( C) -I D , Drain Current (A) Fig 5. Normalized On-Resistance Vs. Temperature Fig 6. Typical On-Resistance Vs. Drain Current 0.45 RDS(on) , Drain-to-Source On Resistance ( ) 300 EAS , Single Pulse Avalanche Energy (mJ) 250 ID -1.5A -2.7A BOTTOM -3.4A TOP 0.35 200 0.25 150 I D = -3.4 A 0.15 100 50 0.05 2 5 8 11 14 A 0 25 50 75 100 125 150 -V G S , G ate-to-S ource V oltage (V) Starting TJ , Junction Temperature ( C) Fig 7. Typical On-Resistance Vs. Gate Voltage Fig 8. Maximum Avalanche Energy Vs. Drain Current 4 www.irf.com IRF7342 1200 960 -VGS , Gate-to-Source Voltage (V) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd , Cds SHORTED Crss = Cgd Coss = Cds + Cgd 20 ID = -3.1A 16 VDS = -48V VDS = -30V VDS = -12V C, Capacitance (pF) 720 Ciss 12 480 8 Coss 240 4 Crss 0 1 10 100 0 0 10 20 30 40 --VDS , Drain-to-Source Voltage (V) QG , Total Gate Charge (nC) Fig 9. Typical Capacitance Vs. Drain-to-Source Voltage Fig 10. Typical Gate Charge Vs. Gate-to-Source Voltage 100 Thermal Response (Z thJA ) D = 0.50 0.20 10 0.10 0.05 0.02 1 0.01 t1 SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thJA + TA 0.001 0.01 0.1 1 10 100 t2 PDM 0.1 0.0001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient www.irf.com 5 IRF7342 SO-8 Package Details D -B - D IM 5 IN C H E S M IN .0532 .0040 .014 .0 075 .1 89 .150 MAX .0688 .0098 .018 .0 098 .1 96 .157 M IL LIM E T E R S M IN 1 .35 0 .10 0 .36 0 .19 4 .80 3 .81 M AX 1 .75 0 .25 0 .46 0.25 4.98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M 5 8 E -A - 7 A1 B C D E e e1 H K 1 2 3 4 AM e 6X e1 A K x 45 .050 B A S IC .025 B A S IC .2 284 .011 0 .16 0 .2 440 .019 .050 8 1.2 7 B A S IC 0.6 35 B A S IC 5 .80 0 .28 0 .41 0 6.20 0 .48 1.27 8 -CB 8X 0 .25 (.01 0) A1 M CASBS 0 .10 (.00 4) L 8X 6 C 8X L R E CO M M E ND E D F O O TP R IN T 0 .72 (.02 8 ) 8X N O TE S : 1 . D IM EN SIO N IN G AN D TO L ER A NC IN G P ER AN S I Y1 4.5 M -198 2. 2 . C O N TRO L LIN G D IM EN SIO N : IN C H . 3 . D IM EN SIO N S A RE SH O W N IN M ILLIM E TE R S (IN C HE S). 4 . O U TLIN E CO N F O RM S TO JED E C O U TLINE M S -0 12 AA . 5 D IM E NS IO N D O ES N O T IN C LU D E M O LD PR O TR US IO N S M O LD P R O TR U SIO NS N O T TO EXCE ED 0 .2 5 (.00 6). 6 D IM E NS IO N S IS TH E LE N G TH O F L EA D FO R SO L DE R IN G TO A SU B STRA TE.. 6 .46 ( .25 5 ) 1 .78 (.07 0) 8X 1.27 ( .0 50 ) 3X Part Marking 6 www.irf.com IRF7342 Tape and Reel T E R M IN A L N U M B E R 1 1 2 .3 ( .48 4 ) 1 1 .7 ( .46 1 ) 8 .1 ( .31 8 ) 7 .9 ( .31 2 ) F E E D D IR E C T IO N N O TES: 1 . C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2 . A L L D IM E N S IO N S A R E S H O W N IN M IL L IM E T E R S (IN C H E S ). 3 . O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1. 33 0.0 0 (1 2 .9 9 2 ) M AX . 1 4 .4 0 ( .5 66 ) 1 2 .4 0 ( .4 88 ) N O TE S : 1. C O N T R O L L IN G D IM E N S IO N : M IL L IM E T E R . 2. O U T L IN E C O N F O R M S T O E IA -4 8 1 & E IA -5 4 1 . WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331 IR GREAT BRITAIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020 IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) 453 2200 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel: ++ 49 6172 96590 IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111 IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086 IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore 237994 Tel: ++ 65 838 4630 IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 10673, Taiwan Tel: 886-2-2377-9936 http://www.irf.com/ Data and specifications subject to change without notice. 2/99 www.irf.com 7 |
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