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| Switching Diodes MA4X159A Silicon epitaxial planar type Unit : mm For switching circuits 0.65 0.15 2.8 - 0.3 + 0.2 1.5 - 0.05 + 0.25 0.65 0.15 0.5 R I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Repetitive peak forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Note) * : t = 1 s Single Double Single Double Single Double Symbol VR VRRM IF(AV) IF(AV) IFRM IFRM IFSM IFSM Tj Tstg Rating 80 80 100 75 225 170 500 375 150 -55 to +150 Unit V V mA mA/Unit mA mA/Unit mA mA/Unit C C 1.1 - 0.1 0.4 0.2 1 : Cathode 1 2 : Cathode 2 3 : Anode 2 4 : Anode 1 Mini Type Package (4-pin) Marking Symbol: M1B Internal Connection 4 3 1 2 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF VR Ct trr VR = 75 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 80 0.9 2 3 0.95 Conditions Min Typ Max 0.1 1.2 Unit A V V pF ns Note) 1. Rated input/output frequency: 100 MHz 2. * : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0 to 0.1 0.1 to 0.3 0.8 0.16 - 0.06 + 0.2 + 0.1 0.6 - 0 * Two isolated elements contained in one package, allowing highdensity mounting * Short reverse recovery time trr * Small terminal capacitance, Ct 1.9 0.2 2.9 - 0.05 0.95 4 1 + 0.2 0.95 0.5 + 0.1 3 0.4 - 0.05 2 0.2 + 0.1 0.4 - 0.05 1.45 + 0.1 I Features 1 MA4X159A IF V F 103 102 Switching Diodes IR V R 1.2 VF Ta 102 10 Forward current IF (mA) Ta = 125C 1.0 IF = 100 mA Reverse current IR (A) Forward voltage VF (V) 0.8 10 mA 3 mA 0.4 1 mA 0.1 mA 0.2 10 1 75C 0.6 1 Ta = 125C 75C 25C 10-1 10-1 - 20C 10-2 25C 10-2 0 0.2 0.4 0.6 0.8 1.0 1.2 10-3 0 20 40 60 80 100 120 0 -40 0 40 80 120 160 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR T a 102 Ct VR 10 f = 1 MHz Ta = 25C 1 000 IF(surge) tW Ta = 25C IF(surge) tW 5 10 Forward surge current IF(surge) (A) 300 100 30 10 3 1 0.3 0.1 0.03 Terminal capacitance Ct (pF) Reverse current IR (A) VR = 80 V 1 40 V 3 2 Non repetitive 1 10-1 0.5 0.3 0.2 10-2 10-3 -40 0.1 0 40 80 120 160 0 10 20 30 40 50 60 0.1 0.3 1 3 10 30 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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