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| RB083L-20 Diodes Schottky barrier diode RB083L-20 !Applications High frequency rectification For switching power supply !External dimensions (Units : mm) 1.50.2 !Features 1) Compact power mold type. (PMDS) 2) Ultra low VF / Low IR. 3) IO=5A guaranteed despite the size. CATHODE MARK 4.50.2 1.20.3 5 7 0.1 +0.02 -0.1 2.00.2 2.60.2 !Construction Silicon epitaxial planar ROHM : PMDS EIAJ : - JEDEC : SOD-106 Date of manufacture EX. 1999.12 9,C !Absolute maximum ratings (Ta=25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Symbol VRM VR IO IFSM Tj Tstg Limits 25 20 5 70 125 -40~+125 Unit V V A A C C Peak forward surge current (60Hz 1 ) Junction temperature Storage temperature When mounted on alumina PCBs (82x30x1.0mm), Tc Max.=90C !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Symbol VF IR Min. - - Typ. - - Max. 0.39 500 Unit V A Conditions IF=3.0A VR=20V 5.00.3 RB083L-20 Diodes !Electrical characteristic curves (Ta=25C) 10 1 CAPACITANCE BETWEEN TERMINALS : CT (pF) 10000 FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) Ta=125C 100m 1 Ta=125C 10m 1000 100m Ta=75C Ta=75C 1m Ta=25C 100 100 10m Ta=25C 1m 0 0.1 0.2 0.3 0.4 0.5 10 0 10 20 30 40 10 0 10 20 30 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Cpacitance between terminals characteristics AVERAGE RECTIFIED FOWARD CURRENT : Io (A) AVERAGE RECTIFIED FOWARD CURRENT : Io (A) 7.0 DC 6.0 D=0.8 5.0 4.0 D=0.5 sine wave 3.0 D=0.3 D=0.2 2.0 D=0.1 D=0.05 1.0 0.0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (C) 8.0 7.0 6.0 5.0 4.0 3.0 DC D=0.8 D=0.5 sine wave D=0.3 D=0.2 D=0.1 2.0 D=0.05 1.0 0.0 0 25 50 75 100 125 CASE TEMPERATURE : Tc (C) Fig.4 Derating curve (lo-Ta) (When mounted on alumina PCBs) Fig.5 Derating curve (lo-Tc) (When mounted on alumina PCBs) |
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