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Datasheet File OCR Text: |
RB495D Diodes Schottky barrier diode RB495D !Applications Low current rectification !External dimensions (Units : mm) 2.90.2 1.90.2 +0.2 -0.1 0.80.1 1.1 1.6 0.4 (All leads have same dimensions) !Construction Silicon epitaxial planar ROHM : SMD3 EIAJ : SC-59 JEDEC : SOT-346 !Circuit !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltege Mean rectifying current1 Peak forward surge current2 Junction temperature Storage temperature Operating temperture 1 Mean output current per element : IO / 2 2 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Topr Limits 40 25 0.4 2 125 Unit V V A A C C C -40~+125 -30~+85 !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Symbol VF1 VF2 IR Min. - - - Typ. - - - Max. 0.30 0.50 70 Unit V V A IF=10mA IF=200mA VR=25V Conditions Note) ESD sensiteve product handling required. 0.3~0.6 D3Q !Features 1) Small surface mounting type. (SMD3) 2) Two diodes with common cathode for excellent installation efficiency. 3) High reliability. 0.95 0.95 +0.2 -0.1 2.80.2 0~0.1 +0.1 -0.05 +0.1 0.15 -0.06 RB495D Diodes !Electrical characteristic curves (Ta = 25C) CAPACITANCE BETWEEN TERMINALS : CT (pF) 100m 100 1 FORWARD CURRENT : IF (A) REVERSE CURRENT : IR (A) 10m Ta=125C 1m 100m =1 2 C 5 C 75 25 C Ta 10m -40 C 75C 100 10 1m 25C 10 100 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 1 0 10 0C 20 30 40 1 0 5 10 15 20 25 30 35 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig.1 Forward characteristics Fig.2 Reverse characteristics Fig.3 Capacitance between terminals characteristics |
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