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| SOT23 P-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET ISSUE 3 - JANUARY 1996 BS250F D G S PARTMARKING DETAIL MX ABSOLUTE MAXIMUM RATINGS. PARAMETER Drain-Source Voltage Continuous Drain Current at Tamb=25C Pulsed Drain Current Gate Source Voltage Power Dissipation at Tamb=25C Operating and Storage Temperature Range SYMBOL VDS ID IDM VGS Ptot Tj:Tstg VALUE -45 -90 -1.6 20 SOT23 UNIT V mA A V mW C 330 -55 to +150 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). PARAMETER Drain-Source Breakdown Voltage Gate-Source Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current Static Drain-Source On-State Resistance (1) Forward Transconductance (1)(2) Input Capacitance (2) Turn-On Delay Time (2)(3) Rise Time (2)(3) Turn-Off Delay Time (2)(3) Fall Time (2)(3) SYMBOL BVDSS VGS(th) IGSS IDSS RDS(on) gfs Ciss td(on) tr td(off) tf 9 90 25 10 10 10 10 MIN. TYP. MAX. UNIT CONDITIONS. -45 -1 -70 -3.5 -20 V V nA ID=-100A, VGS=0V ID =-1mA, VDS= VGS VGS=-15V, VDS=0V VDS=-25V, VGS=0V VGS=-10V,ID=-200mA VDS=-10V,ID=-200mA VDS=-10V, VGS=0V, f=1MHz -0.5. A 14 mS pF ns ns ns ns VDD -25V, ID=-200mA (1) Measured under pulsed conditions. Width=300s. Duty cycle 2% (2) Sample test. (3) Switching times measured with 50 source impedance and <5ns rise time on a pulse generator Spice parameter data is available upon request for this device 3 - 55 BS250F TYPICAL CHARACTERISTICS -1.2 -1.0 VGS=-20V -16V -14V -0.8 -0.6 -0.4 -7V -0.2 0 0 -10 -20 -30 -40 -50 -6V -5V -4V -12V -10V -9V -8V -1.0 VGS= -16V -14V -0.8 -12V -0.6 -10V -9V -8V -7V -0.2 -6V -5V -4.5V 0 -2 -4 -6 -8 -10 ID - Drain Current (Amps) ID - Drain Current (Amps) -0.4 0 VDS - Drain Source Voltage (Volts) VDS - Drain Source Voltage (Volts) Output Characteristics Saturation Characteristics ID(On)-On-State Drain Current (Amps) VDS-Drain Source Voltage (Volts) -10 -8 ID= -6 -400mA -1.0 -0.8 VDS=-10V -0.6 -4 -200mA -0.4 -2 -0.2 0 0 -2 -4 -6 -8 -100mA -10 0 0 -2 -4 -6 -8 -10 VGS-Gate Source Voltage (Volts) VGS-Gate Source Voltage (Volts) Voltage Saturation Characteristics RDS(on)-Drain Source On Resistance () Transfer Characteristics Normalised RDS(on) and VGS(th) 100 VGS=-5V -6V -7V 2.6 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 -40 -20 0 Re ce ur So ain eR nc ta sis DS VGS=-10V ID=0.37A n) (o -10V 10 -15V -20V VGS=VDS Dr ID=-1mA Gate Thres hold Voltage VGS(TH) 20 40 60 80 100 120 140 160 180 1 -10 -100 -1000 ID-Drain Current (mA) Junction Temperature (C) On-resistance vs Drain Current Normalised RDS(on) and VGS(th) vs Temperature 3 - 56 BS250F TYPICAL CHARACTERISTICS 120 100 80 Note:VDS=-10V 60 40 20 0 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.6 -0.7 -0.8 -0.9 -1.0 120 100 80 Note:VDS=-10V 60 40 20 0 0 -1 -2 -3 -4 -5 -6 -7 -8 -9 -10 gfs-Transconductance (mS) gfs-Transconductance (mS) ID- Drain Current (Amps) VGS-Gate Source Voltage (Volts) Transconductance v drain current Transconductance v gate-source voltage VGS-Gate Source Voltage (Volts) 60 50 40 30 20 10 Crss 0 0 -10 -20 -30 -40 -50 -60 -70 Ciss Note:VGS=0V f=1MHz 2 1 0 -2 -4 -6 -8 -10 -12 -14 -16 0 0.5 1.0 1.5 VDS= -20V -40V -60V Note:ID=- 0.2A C-Capacitance (pF) Coss VDS-Drain Source Voltage (Volts) Q-Gate Charge (nC) Capacitance v drain-source voltage Gate charge v gate-source voltage 3 - 57 |
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