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| MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FY7BCH-02 HIGH-SPEED SWITCHING USE FY7BCH-02 OUTLINE DRAWING Dimensions in mm 6.4 4.4 3.0 1.1 0.275 0.65 DRAIN SOURCE GATE q 2.5V DRIVE q VDSS .................................................................................. 20V q rDS (ON) (MAX) ............................................................. 27m q ID ........................................................................................... 7A TSSOP8 APPLICATION Motor control, Lamp control, Solenoid control DC-DC converter, etc. MAXIMUM RATINGS Symbol VDSS VGSS ID IDM IDA IS ISM PD Tch Tstg -- (Tc = 25C) Parameter Drain-source voltage Gate-source voltage Drain current Drain current (Pulsed) Avalanche drain current (Pulsed) Source current Source current (Pulsed) Maximum power dissipation Channel temperature Storage temperature Weight Typical value VGS = 0V VDS = 0V Conditions Ratings 20 10 7 49 7 1.5 6.0 1.6 -55 ~ +150 -55 ~ +150 0.035 Unit V V A A A A A W C C g Sep.1998 L = 10H MITSUBISHI Nch POWER MOSFET e. tion. cifica t to chang c al spe t a fins are subje o is is nic limit e: Th tr Notice parame Som P MIN RELI ARY FY7BCH-02 HIGH-SPEED SWITCHING USE ELECTRICAL CHARACTERISTICS Symbol V (BR) DSS IGSS IDSS VGS (th) rDS (ON) rDS (ON) VDS (ON) yfs Ciss Coss Crss td (on) tr td (off) tf VSD Rth (ch-a) trr Parameter Drain-source breakdown voltage (Tch = 25C) Test conditions ID = 1mA, VGS = 0V VGS = 10V, VDS = 0V VDS = 20V, VGS = 0V ID = 1mA, VDS = 10V ID = 7A, VGS = 4V ID = 3.5A, VGS = 2.5V ID = 7A, VGS = 4V ID = 7A, VDS = 10V VDS = 10V, VGS = 0V, f = 1MHz Limits Min. 20 -- -- 0.4 -- -- -- -- -- -- -- -- -- -- -- -- -- -- Typ. -- -- -- 0.7 20 29 0.140 15 950 350 260 20 65 135 130 0.75 -- 50 Max. -- 0.1 0.1 1.3 27 40 0.189 -- -- -- -- -- -- -- -- 1.1 78.1 -- Unit V A mA V m m V S pF pF pF ns ns ns ns V C/W ns Gate-source leakage current Drain-source leakage current Gate-source threshold voltage Drain-source on-state resistance Drain-source on-state resistance Drain-source on-state voltage Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Source-drain voltage Thermal resistance Reverse recovery time VDD = 10V, ID = 3.5A, VGS = 4V, RGEN = RGS = 50 IS = 1.5A, VGS = 0V Channel to ambient IS = 1.5A, dis/dt = -50A/s Sep.1998 |
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