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| MJD122-1 / MJD122T4 MJD127-1 / MJD127T4 COMPLEMENTARY POWER DARLINGTON TRANSISTORS Ordering Code MJD122T4 MJD122-1 MJD127T4 MJD127-1 s s s Marking MJD122 MJD122 MJD127 MJD127 Package TO-252 TO-251 TO-252 TO-251 (DPAK) (IPAK) (DPAK) (IPAK) Shipment Tape & Reel Tube Tape & Reel Tube 3 3 2 1 s s s STMicroelectronics PREFERRED SALESTYPES LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE THROUGH HOLE TO-251 (IPAK) POWER PACKAGE IN TUBE (SUFFIX "-1") SURFACE MOUNTING TO-252 (DPAK) POWER PACKAGE IN TAPE & REEL (SUFFIX "T4") ELECTRICALLY SIMILAR TO TIP122 AND TIP127 GENERAL PURPOSE SWITCHING AND AMPLIFIER 1 TO-251 IPAK (Suffix "-1") TO-252 DPAK (Suffix "T4") INTERNAL SCHEMATIC DIAGRAM APPLICATIONS: s DESCRIPTION The MJD122 and MJD127 form complementary NPN - PNP pair. They are manufactured using Epi taxial Bas e technology for cost-eff ective performance. R1 Typ. = 10 K R 2 Typ. = 150 ABSOLUTE MAXIMUM RATINGS Symbol Parameter NPN PNP VCBO VCEO VEBO IC ICM IB P tot Tstg Tj Collector-Base Voltage (IE = 0) Collector-Emitter Voltage (IB = 0) Emitter-Base Voltage (IC = 0) Collector Current Collector Peak Current (tp < 5 ms) Base Current Total Dissipation at Tc = 25 C Storage Temperature Max. Operating Junction Temperature Value MJD122 MJD127 100 100 5 5 8 0.1 20 -65 to 150 150 V V V A A A W C C Unit For PNP types voltage and current values are negative. August 2002 1/8 MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4 THERMAL DATA Rthj-case R thj-amb Thermal Resistance Junction-case Thermal Resistance Junction-ambient Max Max 6.25 100 C/W C/W ELECTRICAL CHARACTERISTICS (Tj = 25 C unless otherwise specified) Symbol ICBO ICEO ICEX IEBO Parameter Collector Cut-off Current (IE = 0) Collector Cut-off Current (IB = 0) Collector Cut-off Current (VBE = -1.5 V) Emitter Cut-off Current (IC = 0) VCB = 100 V VCE = 50 V VCE = 100 V VCE = 100 V VEB = 5 V IC = 30 mA 100 Test Conditions Min. Typ. Max. 10 10 10 500 2 Unit A A A A mA V Tj = 125 C VCEO(sus)* Collector-Emitter Sustaining Voltage (IB = 0) VCE(sat)* VBE(sat)* VBE(on)* hFE* Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain IC = 4 A IC = 8 A IC = 8 A IC = 4 A IC = 4 A IC = 8 A IB = 16 mA IB = 80 mA IB = 80 mA VCE = 4 V VCE = 4 V VCE = 4 V 1000 100 2 4 4.5 2.8 12000 V V V V * Pulsed: Pulse duration = 300 s, duty cycle 2 %. For PNP types voltage and current values are negative. 2/8 MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4 Safe Operating Area Derating Curve Collector-Emitter Saturation Voltage (NPN type) Collector-Emitter Saturation Voltage (PNP type) Base-Emitter Saturation Voltage (NPN type) Base-Emitter Saturation Voltage (PNP type) 3/8 MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4 Base-Emitter On Voltage (NPN type) Base-Emitter On Voltage (PNP type) DC Current Gain (NPN type) DC Current Gain (PNP type) Switching Times Resistive Load (NPN type) Switching Times Resistive Load (PNP type) 4/8 MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4 Freewheel Diode Forward Voltage (NPN type) Freewheel Diode Forward Voltage (PNP type) 5/8 MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4 TO-251 (IPAK) MECHANICAL DATA DIM. MIN. A A1 A3 B B2 B3 B5 B6 C C2 D E G H L L1 L2 V1 0.45 0.48 6.00 6.40 4.40 15.90 9.00 0.80 0.80 10o 0.30 0.95 0.60 0.60 6.20 6.60 4.60 16.30 9.40 1.20 1.00 0.018 0.019 0.237 0.252 0.173 0.626 0.354 0.031 0.031 10o 2.20 0.90 0.70 0.64 5.20 mm TYP. MAX. 2.40 1.10 1.30 0.90 5.40 0.85 0.012 0.037 0.024 0.024 0.244 0.260 0.181 0.642 0.370 0.047 0.039 MIN. 0.087 0.035 0.028 0.025 0.204 inch TYP. MAX. 0.094 0.043 0.051 0.035 0.213 0.033 P032N_E 6/8 MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4 TO-252 (DPAK) MECHANICAL DATA mm MIN. A A1 A2 B B2 C C2 D E G H L2 L4 V2 0.60 0 o DIM. 2.20 0.90 0.03 0.64 5.20 0.45 0.48 6.00 6.40 4.40 9.35 inch MAX. 2.40 1.10 0.23 0.90 5.40 0.60 0.60 6.20 6.60 4.60 10.10 MIN. 0.087 0.035 0.001 0.025 0.204 0.018 0.019 0.236 0.252 0.173 0.368 0.031 1.00 8 o TYP. TYP. MAX. 0.094 0.043 0.009 0.035 0.213 0.024 0.024 0.244 0.260 0.181 0.398 0.8 0.024 0 o 0.039 0 o P032P_B 7/8 MJD122-1 / MJD122T4 / MJD127-1 / MJD127T4 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. (c) The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All Rights Reserved STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - United States. (c) http://www.st.com 8/8 |
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