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| DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 PMBD2837; PMBD2838 High-speed double diodes Product specification Supersedes data of April 1996 1996 Sep 18 Philips Semiconductors Product specification High-speed double diodes FEATURES * Small plastic SMD package * High switching speed: max. 4 ns * Continuous reverse voltage: max. 30 V and 50 V respectively * Repetitive peak reverse voltage: max. 35 V and 75 V respectively * Repetitive peak forward current: max. 450 mA. handbook, 4 columns PMBD2837; PMBD2838 PINNING MARKING CODE pA5 pA6 PIN 1 2 3 DESCRIPTION anode (a1) anode (a2) common cathode MARKING TYPE NUMBER PMBD2837 PMBD2838 2 1 APPLICATIONS * High-speed switching in e.g. surface mounted circuits. DESCRIPTION The PMD2837, PMD2838 consist of two high-speed switching diodes with common cathodes, fabricated in planar technology, and encapsulated in small plastic SMD SOT23 packages. Top view 2 3 3 MAM108 1 Fig.1 Simplified outline (SOT23) and symbol. 1996 Sep 18 2 Philips Semiconductors Product specification High-speed double diodes LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL Per diode VRRM repetitive peak reverse voltage PMBD2837 PMBD2838 VR continuous reverse voltage PMBD2837 PMBD2838 IF continuous forward current PARAMETER CONDITIONS PMBD2837; PMBD2838 MIN. MAX. UNIT - - - - single diode loaded; see Fig.2; note 1 double diode loaded; see Fig.2; note 1 - - 35 75 30 50 215 125 450 V V V V mA mA mA IFRM IFSM repetitive peak forward current non-repetitive peak forward current square wave; Tj = 25 C prior to surge; see Fig.4 t = 1 s t = 1 ms t=1s - - - - -65 - 4 1 0.5 250 +150 150 A A A mW C C Ptot Tstg Tj Note total power dissipation storage temperature junction temperature Tamb = 25 C; note 1 1. Device mounted on an FR4 printed-circuit board. 1996 Sep 18 3 Philips Semiconductors Product specification High-speed double diodes ELECTRICAL CHARACTERISTICS Tj = 25 C; unless otherwise specified. SYMBOL Per diode VF forward voltage see Fig.3 IF = 1 mA IF = 10 mA IF = 50 mA IF = 150 mA IR reverse current PMBD2837 PMBD2838 Cd trr diode capacitance reverse recovery time see Fig.5 VR = 30 V VR = 30 V; Tj = 150 C VR = 50 V VR = 50 V; Tj = 150 C f = 1 MHz; VR = 0; see Fig.6 PARAMETER CONDITIONS PMBD2837; PMBD2838 MIN. MAX. UNIT - - - - - - - - - - 715 855 1 1.25 100 40 100 50 2.5 4 mV mV V V nA A nA A pF ns when switched from IF = 10 mA to IR = 10 mA; RL = 100 ; measured at IR = 1 mA; see Fig.7 when switched from IF = 10 mA; tr = 20 ns; see Fig.8 Vfr forward recovery voltage - 1.75 V THERMAL CHARACTERISTICS SYMBOL Rth j-tp Rth j-a Note 1. Device mounted on an FR4 printed-circuit board. PARAMETER thermal resistance from junction to tie-point thermal resistance from junction to ambient note 1 CONDITIONS VALUE 360 500 UNIT K/W K/W 1996 Sep 18 4 Philips Semiconductors Product specification High-speed double diodes GRAPHICAL DATA PMBD2837; PMBD2838 300 IF (mA) 200 MBD033 handbook, halfpage 300 MBG382 IF (mA) (1) (2) (3) single diode loaded 200 double diode loaded 100 100 0 0 100 T amb ( oC) 200 0 0 1 VF (V) 2 Device mounted on an FR4 printed-circuit board. (1) Tj = 150 C; typical values. (2) Tj = 25 C; typical values. (3) Tj = 25 C; maximum values. Fig.2 Maximum permissible continuous forward current as a function of ambient temperature. Fig.3 Forward current as a function of forward voltage. 102 handbook, full pagewidth IFSM (A) MBG704 10 1 10-1 1 10 102 103 tp (s) 104 Based on square wave currents. Tj = 25 C prior to surge. Fig.4 Maximum permissible non-repetitive peak forward current as a function of pulse duration. 1996 Sep 18 5 Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 105 handbook, halfpage IR (nA) 10 4 MBG375 handbook, halfpage 0.8 MBG446 Cd (pF) 0.6 103 (1) (2) (3) 0.4 10 2 0.2 10 0 0 100 Tj (oC) 200 0 4 8 12 VR (V) 16 (1) VR = 50 V; maximum values. (2) VR = 50 V; typical values. (3) VR = 30 V; typical values. f = 1 MHz; Tj = 25 C. Fig.5 Reverse current as a function of junction temperature. Fig.6 Diode capacitance as a function of reverse voltage; typical values. 1996 Sep 18 6 Philips Semiconductors Product specification High-speed double diodes PMBD2837; PMBD2838 handbook, full pagewidth tr D.U.T. 10% SAMPLING OSCILLOSCOPE R i = 50 VR 90% tp t RS = 50 V = VR I F x R S IF IF t rr t (1) MGA881 input signal output signal (1) IR = 1 mA. Fig.7 Reverse recovery voltage test circuit and waveforms. I 1 k 450 I 90% V R = 50 S D.U.T. OSCILLOSCOPE R i = 50 10% MGA882 V fr t tr tp t input signal output signal Fig.8 Forward recovery voltage test circuit and waveforms. 1996 Sep 18 7 Philips Semiconductors Product specification High-speed double diodes PACKAGE OUTLINE PMBD2837; PMBD2838 full pagewidth 3.0 2.8 0.150 0.090 1.9 0.95 2 0.1 max 10 o max 3 1.1 max 30 o max 0.48 0.38 TOP VIEW 0.1 M A B 1 B A 0.2 M A 0.55 0.45 10 o max 1.4 1.2 2.5 max MBC846 Dimensions in mm. Fig.9 SOT23. DEFINITIONS Data Sheet Status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. 1996 Sep 18 8 |
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