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| SBYV26C New Product Vishay Semiconductors formerly General Semiconductor Reverse Voltage 600V Forward Current 1.0A Glass Passivated Ultrafast Rectifier DO-204AL (DO-41) (R) 1.0 (25.4) MIN. 0.107 (2.7) 0.080 (2.0) DIA. Features * * * * * High temperature metallurgically bonded construction Cavity-free glass passivated junction Ultrafast recovery time for high efficiency Low forward voltage, high current capability Capable of meeting environmental standards of MIL-S-19500 Hermetically sealed package Low leakage current * High surge current capability Specified reverse surge capability High temperature soldering guaranteed: 350C/10 seconds, 0.375" (9.5mm) lead length,5 lbs. (2.3kg) tension *Glass-plastic 0.205 (5.2) 0.160 (4.1) * nted Pate Dimensions in inches and (millimeters) 0.034 (0.86) 0.028 (0.71) DIA. encapsulation technique is covered by Patent No. 3,996,602, and brazed-lead assembly by Patent No. 3,930,306 * * * * Mechanical Data Case: JEDEC DO-204AL, molded plastic over glass body Terminals: Plated axial leads, solderable per MIL-STD-750, Method 2026 Polarity: Color band denotes cathode end Mounting Position: Any Weight: 0.012 oz., 0.3 g 1.0 (25.4) MIN. Maximum Ratings and Thermal Characteristics (TA = 25C unless otherwise noted) Parameter Maximum repetitive peak reverse voltage Maximum RMS voltage Maximum DC blocking voltage Maximum average forward rectified current 0.375" (9.5mm) lead length at TL = 85C (See Fig. 1) Peak forward surge current 10ms single half sine-wave superimposed on rated load Non repetitive peak reverse energy Typical thermal resistance (Note 2,3) (Note 1) Symbol VRRM VRMS VDC IF(AV) IFSM ERSM RJA RJL TJ, TSTG Value 600 420 600 1.0 30 5 70 16 -65 to +175 Unit V V V A A mJ C/W C Operating junction and storage temperature range Electrical Characteristics Maximum instantaneous forward voltage at 1.0A Maximum DC reverse current at rated DC blocking voltage (TA = 25C unless otherwise noted) Minimum avalanche breakdown voltage at 100A TJ = 25C TJ = 175C TA = 25C TA = 165C VBR VF IR trr CJ dir/dt 600 2.5 1.3 5.0 150 30 45 7 V V A ns pF A/s Max. reverse recovery time at IF = 0.5A, IR = 1.0A, Irr = 0.25A Maximum junction capacitance at 4.0V, 1MHz Maximum reverse recovery current slope at IF = 1A, VR = 30V, dif/dt = -1A/s Notes: (1) Peak reverse energy measured with 8/20s surge (2) Thermal resistance from junction to ambient at 0.375" (9.5mm) lead length, mounted on P.C.B. with 0.5 x 0.5" (12 x 12mm) copper pads (3) Thermal resistance from junction to lead at 0.375" (9.5mm) lead length with both leads attached to heatsink Document Number 88735 11-Feb-02 www.vishay.com 1 SBYV26C Vishay Semiconductors formerly General Semiconductor Ratings and Characteristic Curves (TA = 25C unless otherwise noted) Fig. 1 - Maximum Forward Current Derating Curve 1.2 100 TL Lead mounted on heatsink Fig. 2 - Maximum Non-Repetitive Peak Forward Surge Current Peak Forward Surge Current (A) TJ = TJ max. 10ms Single Half Sine-Wave Average Forward Rectified Current (A) 1.0 0.8 TA 0.6 10 0.4 Mounted on P.C.B. 0.2 0 0 25 50 75 100 125 150 175 1 1 10 100 Temperature (C) Number of Cycles at 50 HZ Fig. 3 - Typical Instantaneous Forward Characteristics Instantaneous Reverse Leakage Current (A) 100 100 Fig. 4 - Typical Reverse Leakage Characteristics Instantaneous Forward Current (A) 10 TJ = 165C 1 TJ = 125C 10 TJ = 165C TJ = 125C 1 TJ = 25C 0.1 0.1 Pulse Width = 300s 1% Duty Cycle 0.01 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 0.01 TJ = 25C 0.001 0 20 40 60 80 100 Instantaneous Forward Voltage (V) Percent of Rated Peak Reverse Voltage (%) Fig. 5 - Typical Junction Capacitance 100 TJ = 25C f = 1.0 MHZ Vsig = 50mVp-p 100 Fig. 6 - Typical Transient Thermal Impedance Transient Thermal Impedance (C/W) Junction Capacitance (pF) 10 10 1 0.1 1 10 100 1 0.01 0.1 1 10 100 Reverse Voltage (V) www.vishay.com 2 t, Pulse Duration (sec.) Document Number 88735 11-Feb-02 |
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