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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3355
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
5
DESCRIPTION
The 2SK3355 is N-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SK3355 2SK3355-S 2SK3355-ZJ 2SK3355-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMDNote
FEATURES
* Super low on-state resistance: RDS(on)1 = 5.8 m MAX. (VGS = 10 V, ID = 42 A) RDS(on)2 = 8.8 m MAX. (VGS = 4.0 V, ID = 42 A) * Low Ciss: Ciss = 9800 pF TYP. * Built-in gate protection diode
Note TO-220SMD package is produced only in Japan. (TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)
Note1
VDSS VGSS(AC) ID(DC) ID(pulse) PT PT Tch Tstg
Note2 Note2
60 20 83 332 100 1.5 150 -55 to +150 75 562
V V A A W W C C A mJ
Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
(TO-262)
IAS EAS
Notes 1. PW 10 s, Duty cycle 1 % 2. Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 V (TO-263, TO-220SMD)
THERMAL RESISTANCE
Channel to Case Channel to Ambient Rth(ch-C) Rth(ch-A) 1.25 83.3 C/W C/W
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14132EJ2V0DS00 (2nd edition) Date Published May 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1999, 2000
2SK3355
ELECTRICAL CHARACTERISTICS (TA = 25 C)
CHARACTERISTICS Drain to Source On-state Resistance SYMBOL RDS(on)1 RDS(on)2 Gate to Source Cut-off Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr IF = 83 A, VGS = 0 V IF = 83 A, VGS = 0 V, di/dt = 100 A/s ID = 83 A , VDD = 48 V, VGS = 10 V ID = 42 A, VGS(on) = 10 V, VDD = 30 V, RG = 10 TEST CONDITIONS VGS = 10 V, ID = 42 A VGS = 4.0 V, ID = 42 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 42 A VDS = 60 V, VGS = 0 V VGS = 20 V, VDS = 0 V VDS = 10 V, VGS = 0 V, f = 1 MHz 9800 1500 630 130 1450 510 510 170 28 46 0.99 64 130 1.5 39 MIN. TYP. 4.6 6.1 2.0 77 10 10 MAX. 5.8 8.8 2.5 UNIT m m V S
A A
pF pF pF ns ns ns ns nC nC nC V ns nC
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90 % 90 %
VGS VGS
Wave Form
0
10 %
VGS(on)
90 %
IAS ID VDD
ID ID
Wave Form
0 10 %
10 %
= 1 s Duty Cycle 1 %
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D14132EJ2V0DS00
2SK3355
5
TYPICAL CHARACTERISTICS (TA = 25 C )
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 140
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
PT - Total Power Dissipation - W
0 20 40 60 80 100 120 140 160
100 80 60 40 20 0
120 100 80 60 40 20 0 0 20 40 60 80 100 120 140 160
Tch - Channel Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 1000
ID(pulse)
PW =1 0 s
ID - Drain Current - A
100
d ite ) mV Li 10 n) ID(DC) = (o S S RD t V G (a
10 0 s
1m s 10 m s
DC
10
Di ss ipa tio n
Lim ite d
TC = 25C Single Pulse 1 0.1 1 10 100
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000
rth(t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 83.3 C/W
10
1
Rth(ch-C) = 1.25 C/W
0.1 Single Pulse 0.01 10 100 1m 10 m 100 m 1 10 100 1000
PW - Pulse Width - s
Data Sheet D14132EJ2V0DS00
3
2SK3355
FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE
500
ID - Drain Current - A ID - Drain Current - A
100 TA = -50C 25C 75C 150C
400 VGS =10 V 300 200 100 4.0 V
10
1
0.1
1
2
3
4
VDS = 10 V 5 6
Pulsed 0 1.0 2.0 3.0 4.0
VGS - Gate to Source Voltage - V
VDS - Drain to Source Voltage - V
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 10 Pulsed
100 VDS = 10 V Pulsed 10
1
TA = 150C 75C 25C -50C
5
ID = 42 A
0.1
0.01 0.01
0
0.1
1
10
100
0
5
10
15
20
ID - Drain Current - A
VGS - Gate to Source Voltage - V
RDS(on) - Drain to Source On-state Resistance - m
15
Pulsed
VGS(th) - Gate to Source Threshold Voltage - V
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT
GATE TO SOURCE THRESHOLD VOLTAGE vs. CHANNEL TEMPERATURE 3.0 VDS = 10 V ID = 1 mA 2.5 2.0 1.5 1.0 0.5 0 -50
10 VGS = 4.0 V 5 10 V
0
1
10
100
1000
0
50
100
150
ID - Drain Current - A
Tch - Channel Temperature - C
4
Data Sheet D14132EJ2V0DS00
2SK3355
RDS(on) - Drain to Source On-state Resistance - m
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 12 10 8 6 4 2 0 -50 0 50 100 ID = 42 A 150 VGS = 4.0 V 10 V Pulsed
ISD - Diode Forward Current - A
SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 Pulsed VGS = 10 V 100 VGS = 0 V 10
1
0.1 0
0.5
1.0
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 100000
Ciss, Coss, Crss - Capacitance - pF td(on), tr, td(off), tf - Switching Time - ns
SWITCHING CHARACTERISTICS 10000 tr 1000 td(off) tf 100 td(on)
VGS = 0 V f = 1 MHz
10000
Ciss
1 000
Coss Crss
100 0.1
1
10
100
10 0.1
1
10
100
VDS - Drain to Source Voltage - V
ID - Drain Current - A
REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000
trr - Reverse Recovery Time - ns VDS - Drain to Source Voltage - V
di/dt = 100 A/s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 VGS 80 60 VDD = 48 V 30 V 12 V 8 10
VGS - Gate to Source Voltage - V
100
6 4
40 VDS
10
20 0 0
2 ID = 83 A 100 120 140 160
1 0.1
1.0
10
100
20
40
60
80
IF - Drain Current - A
QG - Gate Charge - nC
Data Sheet D14132EJ2V0DS00
5
2SK3355
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 1000 160 140
SINGLE AVALANCHE ENERGY DERATING FACTOR
VDD = 30 V RG = 25 VGS = 20 V 0 V IAS 75 A
IAS - Single Avalanche Energy - mJ
Energy Derating Factor - %
10 m
120 100 80 60 40 20
100
IAS = 75 A
EAS
10 VDD = 30 V RG = 25 VGS = 20 V 0 V 100
=5
62 m
J
1 10
1m
0 25
50
75
100
125
150
L - Inductive Load - H
Starting Tch - Starting Channel Temperature - C
6
Data Sheet D14132EJ2V0DS00
2SK3355
PACKAGE DRAWINGS (Unit: mm)
1) TO-220AB(MP-25) 2) TO-262(MP-25 Fin Cut)
3.00.3
10.6 MAX. 10.0
4.8 MAX.
1.00.5
4.8 MAX. 1.30.2
3.60.2
5.9 MIN.
(10)
1.30.2
4
15.5 MAX.
1
2
3
4 123
6.0 MAX.
1.30.2
12.7 MIN.
1.30.2
12.7 MIN.
8.50.2
0.750.3 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
0.750.1 2.54 TYP.
0.50.2 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
3)
TO-263 (MP-25ZJ)
4) TO-220SMD(MP-25Z)
Note
(10) 4
1.00.5 8.50.2
4.8 MAX. 1.30.2
(10) 4
4.8 MAX. 1.30.2
1.00.5
5.70.4
110.4
3.00.5
8.50.2
(0 ) .5R R) .8 (0
1.40.2 0.70.2 2.54 TYP. 1 2
(
R 0.5
)
1.40.2
.8 R)
1.00.3 0.50.2 2.54 TYP. 1 2
0.50.2
3 2.54 TYP.
(0
3 2.54 TYP. 1.Gate 2.Drain 3.Source 4.Fin (Drain)
2.80.2
Note This Package is produced only in Japan.
EQUIVALENT CIRCUIT
Drain
Remark
Gate Body Diode
The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device.
Gate Protection Diode
Source
2.80.2
1.Gate 2.Drain 3.Source 4.Fin (Drain)
Data Sheet D14132EJ2V0DS00
7
2SK3355
* The information in this document is current as of May, 2000. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC's data sheets or data books, etc., for the most up-to-date specifications of NEC semiconductor products. Not all products and/or types are available in every country. Please check with an NEC sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without prior written consent of NEC. NEC assumes no responsibility for any errors that may appear in this document. * NEC does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC semiconductor products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of customer's equipment shall be done under the full responsibility of customer. NEC assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC endeavours to enhance the quality, reliability and safety of NEC semiconductor products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC semiconductor products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment, and anti-failure features. * NEC semiconductor products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to semiconductor products developed based on a customer-designated "quality assurance program" for a specific application. The recommended applications of a semiconductor product depend on its quality grade, as indicated below. Customers must check the quality grade of each semiconductor product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC semiconductor products is "Standard" unless otherwise expressly specified in NEC's data sheets or data books, etc. If customers wish to use NEC semiconductor products in applications not intended by NEC, they must contact an NEC sales representative in advance to determine NEC's willingness to support a given application. (Note) (1) "NEC" as used in this statement means NEC Corporation and also includes its majority-owned subsidiaries. (2) "NEC semiconductor products" means any semiconductor product developed or manufactured by or for NEC (as defined above).
M8E 00. 4

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