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| BSP 315 SIPMOS (R) Small-Signal Transistor * P channel * Enhancement mode * Logic Level * VGS(th) = -0.8...-2.0 V Pin 1 G Type BSP 315 Type BSP 315 BSP 315 Pin 2 D Pin 3 S Pin 4 D VDS -50 V ID -1.1 A RDS(on) 0.8 Package SOT-223 Marking BSP 315 Ordering Code Q67000-S75 Q67000-S249 Tape and Reel Information E6327 E6433 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -50 -50 Unit V VDS VDGR VGS ID RGS = 20 k Gate source voltage Continuous drain current 20 A -1.1 TA = 39 C DC drain current, pulsed IDpuls -4.4 TA = 25 C Power dissipation Ptot 1.8 W TA = 25 C Semiconductor Group 1 Sep-12-1996 BSP 315 Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Therminal resistance, junction-soldering point 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 70 10 E 55 / 150 / 56 K/W Unit C Tj Tstg RthJA RthJS 1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -50 -1.1 -0.1 -10 -10 0.65 -2 -1 -100 -100 -100 V VGS = 0 V, ID = -0.25 mA, Tj = 25 C Gate threshold voltage VGS(th) -0.8 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS A nA nA 0.8 VDS = -50 V, VGS = 0 V, Tj = 25 C VDS = -50 V, VGS = 0 V, Tj = 125 C VDS = -30 V, VGS = 0 V, Tj = 25 C Gate-source leakage current IGSS RDS(on) VGS = -20 V, VDS = 0 V Drain-Source on-state resistance VGS = -10 V, ID = -1.1 A Semiconductor Group 2 Sep-12-1996 BSP 315 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Dynamic Characteristics Transconductance Values typ. max. Unit gfs 0.25 0.7 300 150 85 - S pF 400 230 130 ns 8 12 VDS 2 * ID * RDS(on)max, ID = -1.1 A Input capacitance Ciss Coss - VGS = 0 V, VDS = 25 V, f = 1 MHz Output capacitance VGS = 0 V, VDS = 25 V, f = 1 MHz Reverse transfer capacitance Crss - VGS = 0 V, VDS = 25 V, f = 1 MHz Turn-on delay time td(on) VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Rise time tr 35 55 VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Turn-off delay time td(off) 80 110 VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Fall time tf 140 190 VDD = -30 V, VGS = -10 V, ID = -0.29 A RGS = 50 Semiconductor Group 3 Sep-12-1996 BSP 315 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Reverse Diode Inverse diode continuous forward current IS TA = 25 C Inverse diode direct current,pulsed A -1.2 -1.1 -4.4 V -1.5 Values typ. max. Unit ISM VSD TA = 25 C Inverse diode forward voltage VGS = 0 V, IF = -2.2 A, Tj = 25 C Semiconductor Group 4 Sep-12-1996 BSP 315 Power dissipation Ptot = (TA) Drain current ID = (TA) parameter: VGS -10 V -1.2 A -1.0 2.0 W Ptot 1.6 1.4 ID -0.9 -0.8 1.2 1.0 0.8 0.6 -0.7 -0.6 -0.5 -0.4 -0.3 0.4 -0.2 0.2 0.0 0 20 40 60 80 100 120 C 160 -0.1 0.0 0 20 40 60 80 100 120 C 160 TA TA Safe operating area ID=f(VDS) parameter : D = 0, TC=25C Transient thermal impedance Zth JA = (tp) parameter: D = tp / T 10 2 K/W 10 1 ZthJC 10 0 10 -1 D = 0.50 0.20 10 -2 0.10 0.05 10 -3 single pulse 0.02 0.01 10 -4 -8 -7 -6 -5 -4 -3 -2 -1 0 10 10 10 10 10 10 10 10 s 10 tp Semiconductor Group 5 Sep-12-1996 BSP 315 Typ. output characteristics ID = (VDS) parameter: tp = 80 s -2.6 A -2.2 Typ. drain-source on-resistance RDS (on) = (ID) parameter: tp = 80 s, Tj = 25 C 2.6 Ptot = 2W lk j i h g VGS [V] a -2.0 b -2.5 c -3.0 2.2 a b c d e f ID -2.0 -1.8 -1.6 -1.4 -1.2 -1.0 -0.8 -0.6 -0.4 -0.2 0.0 0.0 -1.0 -2.0 -3.0 -4.0 V a c b e RDS (on) 2.0 1.8 1.6 1.4 1.2 g f d -3.5 e -4.0 f -4.5 g -5.0 h -6.0 i j -7.0 -8.0 1.0 h d k -9.0 l -10.0 0.8 0.6 0.4 0.2 0.0 VGS [V] = a b c d e f -2.0 -3.0 -3.5 -4.0 -4.5 -5.0 -2.5 i kj g h i j k -6.0 -7.0 -8.0 -9.0 -10.0 -6.0 0.0 -0.4 -0.8 -1.2 -1.6 A -2.4 VDS ID Typ. transfer characteristics ID = f(VGS) parameter: tp = 80 s Typ. forward transconductance gfs = f (ID) parameter: tp = 80 s, -6.0 A -5.0 1.1 S ID -4.5 -4.0 -3.5 gfs 0.9 0.8 0.7 0.6 -3.0 0.5 -2.5 -2.0 -1.5 -1.0 -0.5 0.0 0 -1 -2 -3 -4 -5 -6 -7 -8 V -10 0.4 0.3 0.2 0.1 0.0 0.0 -1.0 -2.0 -3.0 -4.0 A ID -5.5 VGS Semiconductor Group 6 Sep-12-1996 BSP 315 Drain-source on-resistance RDS (on) = (Tj ) parameter: ID = -1.1 A, VGS = -10 V 2.4 Gate threshold voltage VGS (th) = (Tj) parameter: VGS = VDS, ID = -1 mA -4.6 V -4.0 2.0 RDS (on) 1.8 1.6 1.4 1.2 VGS(th) -3.6 -3.2 -2.8 -2.4 98% 1.0 98% -2.0 -1.6 -1.2 -0.8 -0.4 0.0 typ 0.8 0.6 0.4 0.2 0.0 -60 -20 20 60 100 C 160 typ 2% -60 -20 20 60 100 C 160 Tj Tj Typ. capacitances C = f (VDS) parameter:VGS=0V, f = 1 MHz 10 4 Forward characteristics of reverse diode IF = (VSD) parameter: Tj , tp = 80 s -10 1 pF C 10 3 A IF -10 0 Ciss Coss Crss 10 2 -10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 1 0 -5 -10 -15 -20 -25 -30 V VDS -40 -10 -2 0.0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Semiconductor Group 7 Sep-12-1996 BSP 315 Drain-source breakdown voltage V(BR)DSS = (Tj ) Safe operating area ID=f(VDS) parameter : D = 0.01, TC=25C -60 V -58 V(BR)DSS-57 -56 -55 -54 -53 -52 -51 -50 -49 -48 -47 -46 -45 -60 -20 20 60 100 C 160 Tj Semiconductor Group 8 Sep-12-1996 BSP 315 Package outlines SOT-223 Dimensions in mm Semiconductor Group 9 Sep-12-1996 |
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