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| FJP5304D FJP5304D High Voltage High Speed Power Switch Application * * * * Wide Safe Operating Area Built-in Free Wheeling diode Suitable for Electronic Ballast Application Small Variance in Storage Time B Equivalent Circuit C 1 E TO-220 2.Collector 3.Emitter 1.Base NPN Triple Diffused Planar Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB IBP PC TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) * Collector Current (Pulse) Base Current (DC) * Base Current (Pulse) Collector Dissipation (TC=25C) Storage Temperature Value 700 400 12 4 8 2 4 70 - 65 ~ 150 Units V V V A A A A W C * Pulse Test Pulse Width = 5ms, Duty Cycle 1.0% Electrical Characteristics TC=25C unless otherwise noted Symbol BVCBO BVCEO BVEBO ICES ICEO IEBO hFE VCE(sat) Parameter Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current DC Current Gain Collector-Emitter Saturation Voltage Test Condition IC = 1mA, IE = 0 IC = 5mA, IB = 0 IE = 1mA, IC = 0 VCE = 700V, VEB = 0 VCE = 400V, IB = 0 VEB = 12V, IC = 0 VCE = 5V, IC = 10mA VCE = 5V, IC = 2A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IC = 0.5A, IB = 0.1A IC = 1A, IB = 0.2A IC = 2.5A, IB = 0.5A IF = 2A 10 8 Min. 700 400 12 100 250 100 40 0.7 1.0 1.5 1.1 1.2 1.3 2.5 V Typ. Max. Units V V V mA mA mA VBE(sat) Base-Emitter Saturation Voltage V Vf Internal Diode Forward Voltage Drop V (c)2003 Fairchild Semiconductor Corporation Rev. A, May 2003 FJP5304D Electrical Characteristics (Continued) TC=25C unless otherwise noted Symbol Parameter Inductive Load Switching (VCC = 200V) tstg tf Storage Time Fall Time Test Condition IC = 2A, IB1 = 0.4A VBE(off) = -5V, L = 200H IC = 2A, IB1 = IB2 = 0.4A TP = 30s Min. TYP. 0.6 0.1 Max. Units s Resistive Load Switching (VCC = 250V) tstg tf Storage Time Fall Time 2.9 0.2 s * Pulse test: PW300s, Duty cycle2% Thermal Characteristics Symbol RJC RJA Parameter Thermal Resistance, Junction to Case Thermal Resistance, Junction to Ambient Max. 1.78 62.5 Units C/W C/W (c)2003 Fairchild Semiconductor Corporation Rev. A, May 2003 FJP5304D Typical Characteristics 5 100 IC[A], COLLECTOR CURRENT 4 hFE ,DC CURRENT GAIN 3 IB = 500mA IB = 450mA IB = 400mA IB = 350mA IB = 300mA IB = 250mA IB = 200mA IB = 150mA IB = 100mA Vce=5V Ta=125 C 25 C -25 C 10 o o o 2 IB = 50mA 1 0 0 1 2 3 4 5 6 7 8 IB = 0 9 10 1 0.01 0.1 1 10 VCE [V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC Current Gain 10 Ic=5IB 25 C 10 Ic=5IB VBE [V],SATURATION VOLTAGE VCE (sat)[V],SATURATION VOLTAGE O 1 Ta=125 C -25 C 0.1 O O 1 -25 C 25 C Ta=125 C O O O 0.01 0.01 0.1 1 10 0.1 0.01 0.1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 3. Collector-Emitter Saturation Voltage Figure 4. Base-Emitter Saturation Voltage 10 1000 VCC = 250V IC = 5IB1 = -5IB2 tSTG tSTG 1 tSTG, tF [ns], TIME tSTG, tF [s], TIME 100 tF 0.1 tF 0.01 0.1 1 10 10 0.1 VClamp = 200V, VBE(OFF)=-5V, RBB=0 Ohm, L=200 uH, IC = 5IB1 1 10 IC[A], COLLECTOR CURRENT IC[A], COLLECTOR CURRENT Figure 5. Resitive Load Switching Time Figure 6. Inductive Load Switching Time (c)2003 Fairchild Semiconductor Corporation Rev. A, May 2003 FJP5304D Typical Characteristics (Continued) 100 TC=25 C o 100 IC[A], COLLECTOR CURRENT 10 IC[A], COLLECTOR CURRENT Vcc=50V, IB1=1A, IB2 = -1A L = 1mH 10 1s 10s 1 1ms DC 0.1 1 0.1 0.01 10 100 1000 0.01 10 100 1000 10000 VCE [V], COLLECTOR-EMITTER VOLTAGE VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 7. Forward Bias Safe Operating Area Figure 8. Reverse Bias Safe Operating Area 100 PC[W], POWER DISSIPATION 80 60 40 20 0 0 25 50 o 75 100 125 150 175 TC[ C], CASE TEMPERATURE Figure 9. Power Derating (c)2003 Fairchild Semiconductor Corporation Rev. A, May 2003 FJP5304D Package Dimensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2003 Fairchild Semiconductor Corporation Rev. A, May 2003 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM FACTTM ActiveArrayTM FACT Quiet seriesTM BottomlessTM FAST(R) FASTrTM CoolFETTM CROSSVOLTTM FRFETTM GlobalOptoisolatorTM DOMETM EcoSPARKTM GTOTM E2CMOSTM HiSeCTM EnSignaTM I2CTM Across the board. Around the world.TM The Power FranchiseTM Programmable Active DroopTM DISCLAIMER ImpliedDisconnectTM ISOPLANARTM LittleFETTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TruTranslationTM UHCTM UltraFET(R) VCXTM FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2003 Fairchild Semiconductor Corporation Rev. I2 |
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