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Schottky Barrier Diodes (SBD) MA2Z748 Silicon epitaxial planar type Unit : mm For super-high speed switching circuit For small current rectification 0.5 0.1 K A 0.625 I Absolute Maximum Ratings Ta = 25C Parameter Reverse voltage (DC) Repetitive peak reverse voltage Average forward current Non-repetitive peak forward surge current* Junction temperature Storage temperature Symbol VR VRRM IF(AV) IFSM Tj Tstg Rating 20 20 300 3 125 -55 to +125 Unit V V mA A C C 0.4 0.1 1.7 0.1 2.5 0.2 0.4 0.1 1 : Anode 2 : Cathode S-Mini Type Package (2-pin) Marking Symbol: 2K Internal Connection Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive) 2 1 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Terminal capacitance Reverse recovery time* Symbol IR VF Ct trr VR = 10 V IF = 300 mA VR = 0 V, f = 1 MHz IF = IR = 100 mA Irr = 0.1 * IR, RL = 100 60 5 Conditions Min Typ Max 30 0.4 Unit A V pF ns Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a human body and the leakage of current from the operating equipment. 2. Rated input/output frequency: 400 MHz 3. * : trr measuring instrument Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 100 mA IR = 100 mA RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 0.7 0.1 * Low VF type of MA2Z720 * High rectification efficiency caused by its low forward-risevoltage (VF) * Optimum for high-frequency rectification because of its short reverse recovery time (trr) 2 1 0.16 - 0.06 + 0.1 1.25 0.1 I Features 0.3 1 MA2Z748 IF V F 103 104 Ta = 125C 102 Ta = 125C 103 Schottky Barrier Diodes (SBD) IR V R 0.8 0.7 VF Ta Forward current IF (mA) Reverse current IR (A) Forward voltage VF (V) 75C 25C - 20C 0.6 0.5 0.4 0.3 0.2 50 mA 0.1 5 mA IF = 500 mA 75C 102 10 1 10 25C 10-1 1 10-2 0 0.1 0.2 0.3 0.4 0.5 0.6 10-1 0 5 10 15 20 25 30 0 -40 0 40 80 120 160 200 Forward voltage VF (V) Reverse voltage VR (V) Ambient temperature Ta (C) IR Ta 104 VR = 20 V 10 V 6V 200 Ct VR 1 000 IF(surge) tW Ta = 25C Forward surge current IF(surge) (A) 300 tW 100 30 10 3 1 0.3 0.1 0.1 IF(surge) 103 Terminal capacitance Ct (pF) Reverse current IR (A) 150 102 100 10 50 1 10-1 -40 0 0 40 80 120 160 200 0 5 10 15 20 0.3 1 3 10 30 100 Ambient temperature Ta (C) Reverse voltage VR (V) Pulse width tW (ms) 2 |
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