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| S595T/S595TR/S595TRW Vishay Telefunken MOSMIC(R) for TV-Tuner Prestage with 5 V Supply Voltage MOSMIC - MOS Monolithic Integrated Circuit Electrostatic sensitive device. Observe precautions for handling. Applications Low noise gain controlled input stages in UHF-and VHF- tuner with 5 V supply voltage. AGC RF in C block C block G2 G1 S D RF out C block 94 9296 RFC VDD Features D D D D Integrated gate protection diodes Low noise figure High gain Biasing network on chip D Improved cross modulation at gain reduction D High AGC-range D SMD package 2 1 1 2 94 9279 13 579 94 9278 95 10831 3 4 4 3 S595T Marking: 595 Plastic case (SOT 143) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 S595TR Marking: 59R Plastic case (SOT 143R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 1 2 13 654 13 566 4 3 S595TRW Marking: W59 Plastic case (SOT 343R) 1 = Source, 2 = Drain, 3 = Gate 2, 4 = Gate 1 Document Number 85049 Rev. 4, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 1 (9) S595T/S595TR/S595TRW Vishay Telefunken Absolute Maximum Ratings Tamb = 25_C, unless otherwise specified Parameter Drain - source voltage Drain current Gate 1/Gate 2 - source peak current Gate 1/Gate 2 - source voltage Total power dissipation Channel temperature Storage temperature range Test Conditions Symbol Value VDS 8 ID 30 IG1/G2SM 10 VG1/G2SM 6 Ptot 200 TCh 150 Tstg -55 to +150 Unit V mA mA V mW C C Tamb 60 C Maximum Thermal Resistance Tamb = 25_C, unless otherwise specified Parameter Test Conditions Channel ambient on glass fibre printed board (25 x 20 x 1.5) mm3 plated with 35mm Cu Symbol RthChA Value 450 Unit K/W Electrical DC Characteristics Tamb = 25_C, unless otherwise specified Parameter Gate 1 - source breakdown voltage Gate 2 - source breakdown voltage Gate 1 - source leakage current Gate 2 - source leakage current Drain current Self-biased operating current Gate 2 - source cut-off voltage Test Conditions IG1S = 10 mA, VG2S = VDS = 0 IG2S = 10 mA, VG1S = VDS = 0 +VG1S = 5 V, VG2S = VDS = 0 -VG1S = 5 V, VG2S = VDS = 0 VG2S = 5 V, VG1S = VDS = 0 VDS = 5 V, VG1S = 0, VG2S = 4 V VDS = 5 V, VG1S = nc, VG2S = 4 V VDS = 5 V, VG1S = nc, ID = 20 mA Symbol Min V(BR)G1SS 7 V(BR)G2SS +IG1SS -IG1SS IG2SS IDSS IDSP VG2S(OFF) 50 9 7 Typ Max Unit 10 V 10 50 100 20 500 18 V mA mA nA mA mA V 13 1.0 Caution for Gate 1 switch-off mode: No external DC-voltage on Gate 1 in active mode! Switch-off at Gate 1 with VG1S < 0.7 V is feasible. Using open collector switching transistor (inside of PLL), insert 10 kW collector resistor. www.vishay.de * FaxBack +1-408-970-5600 2 (9) Document Number 85049 Rev. 4, 20-Jan-99 S595T/S595TR/S595TRW Vishay Telefunken Electrical AC Characteristics VDS = 5 V, VG2S = 4 V, f = 1 MHz , Tamb = 25_C, unless otherwise specified Parameter Forward transadmittance Gate 1 input capacitance Feedback capacitance Output capacitance Power g gain AGC range Noise figure g Test Conditions Symbol y21s Cissg1 Crss Coss Gps Gps DGps Min 28 GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz VDS = 5 V, VG2S = 1 to 4 V, f = 800 MHz GS = 2 mS, GL = 0.5 mS, f = 200 MHz GS = 3,3 mS, GL = 1 mS, f = 800 MHz 17 45 Typ 30 2.3 25 1.1 28 21 1 1.3 F F Max Unit 35 mS 2.7 pF fF pF dB dB dB dB dB Common Source S-Parameters VDS = 5 V , VG2S = 4 V , Z0 = 50 W, Tamb = 25_C, unless otherwise specified S11 LOG ANG MAG dB deg -0.01 -4.6 -0.03 -9.2 -0.11 -13.8 -0.19 -18.1 -0.28 -22.6 -0.40 -26.8 -0.51 -31.1 -0.64 -35.2 -0.78 -39.3 -0.93 -43.2 -1.07 -47.1 -1.22 -50.8 -1.36 -54.4 -1.49 -58.2 -1.65 -61.5 -1.79 -65.2 -1.94 -68.6 -2.04 -72.0 -2.17 -75.3 -2.29 -78.7 -2.42 -82.2 -2.58 -85.2 -2.70 -88.4 -2.78 -91.6 -2.89 -94.8 -3.00 -97.7 S21 LOG ANG MAG dB deg 9.61 174.3 9.56 167.9 9.44 161.3 9.30 155.1 9.15 148.4 9.00 142.7 8.79 136.8 8.62 130.7 8.35 125.3 8.17 119.7 7.94 114.2 7.71 108.7 7.50 104.1 7.26 99.1 7.08 94.1 6.86 89.2 6.68 84.5 6.44 79.3 6.27 74.4 6.09 70.4 5.93 65.8 5.67 61.1 5.55 56.1 5.41 51.8 5.38 47.1 5.17 42.0 S12 LOG ANG MAG dB deg -63.13 88.0 -56.88 85.3 -53.46 82.8 -51.38 80.7 -49.76 78.3 -48.70 77.3 -47.92 76.4 -47.45 76.2 -47.23 76.7 -47.10 78.4 -47.22 82.3 -46.92 88.6 -46.68 92.6 -46.47 98.8 -46.45 107.2 -45.89 116.7 -44.77 125.9 -43.51 133.0 -41.91 137.1 -40.66 138.5 -39.81 140.6 -38.89 143.6 -37.91 145.8 -36.76 148.3 -35.65 149.7 -34.63 150.1 S22 LOG ANG MAG dB deg -0.08 -2.1 -0.10 -4.3 -0.14 -6.4 -0.16 -8.6 -0.22 -11.0 -0.26 -12.9 -0.30 -15.1 -0.38 -17.1 -0.43 -18.8 -0.49 -20.6 -0.55 -22.6 -0.60 -24.6 -0.66 -26.1 -0.70 -27.9 -0.73 -29.8 -0.78 -31.7 -0.80 -33.4 -0.85 -35.4 -0.87 -37.2 -0.89 -39.1 -0.90 -41.1 -0.92 -42.6 -0.93 -44.6 -0.94 -46.7 -0.93 -49.1 -0.92 -51.0 f/MHz 50 100 150 200 250 300 350 400 450 500 550 600 650 700 750 800 850 900 950 1000 1050 1100 1150 1200 1250 1300 Document Number 85049 Rev. 4, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 3 (9) S595T/S595TR/S595TRW Vishay Telefunken Typical Characteristics (Tamb = 25_C unless otherwise specified) y21s - Forward Transadmittance ( mS ) Ptot - Total Power Dissipation ( mW ) 250 40 VDS=5V f=200MHz 30 200 150 20 100 50 0 0 25 50 75 100 125 150 10 0 0 95 11159 1 2 3 4 95 10759 Tamb - Ambient Temperature ( C ) VG2S - Gate 2 Source Voltage ( V ) Figure 1. Total Power Dissipation vs. Ambient Temperature 20 C issg1 - Gate 1 Input Capacitance ( pF ) Figure 4. Forward Transadmittance vs. Gate 2 Source Voltage 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 0 13634 ID - Drain Current ( mA ) 16 VG2S=4V 12 3V 8 2V 4 0 0 1 2 3 4 1.5V 1V 5 VDS - Drain Source Voltage ( V ) VDS=5V f=200MHz 1 2 3 4 5 95 11157 VG2S - Gate 2 Source Voltage ( V ) Figure 2. Drain Current vs. Drain Source Voltage Figure 5. Gate 1 Input Capacitance vs. Gate 2 Source Voltage 2.0 C oss - Output Capacitance ( pF ) 20 VDS=5V ID - Drain Current ( mA ) 16 VDS=4V f=200MHz 1.5 12 1.0 8 4 0 0 1 2 3 4 0.5 0 3 13635 4 5 6 7 95 11158 VG2S - Gate 2 Source Voltage ( V ) VDS - Drain Source Voltage ( V ) Figure 3. Drain Current vs. Gate 2 Source Voltage Figure 6. Output Capacitance vs. Drain Source Voltage www.vishay.de * FaxBack +1-408-970-5600 4 (9) Document Number 85049 Rev. 4, 20-Jan-99 S595T/S595TR/S595TRW Vishay Telefunken 20 CM - Cross Modulation ( dB ) - Transducer Gain ( dB ) 10 0 -10 -20 -30 -40 -50 -60 0 13636 80 VDS=5V f=800MHz 70 60 50 40 30 20 10 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 13637 VDS=5V f=800MHz Pin=-20dBm S 21 2 2 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 VG2S - Gate 2 Source Voltage ( V ) VG2S - Gate 2 Source Voltage ( V ) Figure 7. Transducer Gain vs. Gate 2 Source Voltage Figure 8. Cross Modulation vs. Gate 2 Source Voltage Document Number 85049 Rev. 4, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 5 (9) S595T/S595TR/S595TRW Vishay Telefunken VDS = 5 V, VG2S = 4 V , Z0 = 50 W S11 j 120 j0.5 j2 1300MHz j0.2 j5 1050 800 550 0 0.2 0.5 1 2 5 30 S12 90 60 50 -j5 1 300 180 50 0.008 0.016 0 -j0.2 12 944 S21 550 300 90 800 60 1050 30 1300MHz 50 180 1.0 2.0 0 0 -j0.2 -150 -30 -j0.5 -120 12 946 -60 -90 12 947 Figure 10. Forward transmission coefficient Figure 12. Output reflection coefficient www.vishay.de * FaxBack +1-408-970-5600 6 (9) AAAAAAAAA A AAAAAAAAA A AAAAAAAAAA AA AAAAAAAAAA AA 300 1300MHz 1050 800 -j0.5 -j 550 -j2 -150 -30 -120 12 945 -60 -90 Figure 9. Input reflection coefficient Figure 11. Reverse transmission coefficient S22 j j0.5 j2 j0.2 j5 0.2 0.5 1 2 5 50 300 -j5 1 550 800 1050 -j2 1300MHz -j Document Number 85049 Rev. 4, 20-Jan-99 S595T/S595TR/S595TRW Vishay Telefunken Dimensions of S595T in mm 96 12240 Dimensions of S595TR in mm 96 12239 Document Number 85049 Rev. 4, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 7 (9) S595T/S595TR/S595TRW Vishay Telefunken Dimensions of S595TRW in mm 96 12238 www.vishay.de * FaxBack +1-408-970-5600 8 (9) Document Number 85049 Rev. 4, 20-Jan-99 S595T/S595TR/S595TRW Vishay Telefunken Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( ODSs ). The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency ( EPA ) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423 Document Number 85049 Rev. 4, 20-Jan-99 www.vishay.de * FaxBack +1-408-970-5600 9 (9) |
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