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| SDC04 Absolute maximum ratings Symbol VCBO VCEO VEBO IC ICP IB PT Tj Tstg Ratings 10015 10015 6 1.5 NPN Darlington With built-in avalanche diode (Ta=25C) External dimensions E *** SD Electrical characteristics Symbol ICBO IEBO VCEO hFE VCE(sat) VBE(sat) VFEC ton tstg tf fT Cob 1 85 2000 100 5000 1.0 1.7 1.2 0.6 3.0 1.0 30 20 Specification min typ max 10 3 115 12000 1.3 2.2 1.8 V V V Unit (Ta=25C) Unit V V V A A A W C C C/W Conditions VCB=85V VEB=6V IC=10mA VCE=4V, IC=1A IC=1A, IB=2mA IFEC=1A VCC 30V, IC=1A, IB1=-IB2=2mA VCE=12V, IE=-0.1A VCB=10V, f=1MHz A mA V 2.5 (PW1ms, Du10%) 0.1 3 (Ta=25C) 150 -40 to +150 41.6 s s s MHz pF j-a sEquivalent circuit diagram 15,16 1 R1 R2 2 3 13,14 5 11,12 7 9,10 4 6 8 R1: 4k typ R2: 150 typ Characteristic curves IC-VCE Characteristics (Typical) 2.5 IB=5mA 1mA 0.5m A hFE-IC Characteristics (Typical) 20000 10000 typ hFE-IC Temperature Characteristics (Typical) 20000 10000 5000 =1 Ta 25 C 75 C 25 C 0 C (VCE=4V) (VCE=4V) 2.0 0.3m A 5000 IC (A) 1.5 hFE hFE 1000 500 1000 500 -3 1.0 0.2mA 0.5 100 100 0.1 0.5 1 2.5 0 0 1 2 3 4 5 6 50 0.03 0.05 50 0.03 0.05 0.1 0.5 1 2.5 VCE (V) IC (A) IC (A) VCE(sat)-IC Temperature Characteristics (Typical) 2 VCE(sat)-IB Characteristics (Typical) 3 IC-VBE Temperature Characteristics (Typical) 2.5 (IC / IB=1000) (VCE=4V) 2.0 2 IC=4A VCE (sat) (V) VCE (sat) (V) 1 Ta=125C 75C 25C -30C IC=2A IC (A) 1.5 1 IC-1A 0.5 0 0.3 0.5 1 2.5 0 0.1 0.5 1 5 10 50 100 0 0 1 Ta= 125 C 75C 25C -30C 1.0 2 3 IC (A) IB (mA) VBE (V) j-a-PW Characteristics 50 PT-Ta Characteristics 3 4 3 2 Safe Operating Area (SOA) 5 1-1 Chip Operation 2-2 Chip Operation 3-3 Chip Operation 4-4 Chip Operation 10 1m s 0 s j-a (C / W) 2 1 10 ms PT (W) 1 5 1 IC (A) 10 0.5 0.1 0.05 Without Heatsink 1 1 5 10 50 100 500 1000 Single Pulse Ta=25C 0 0 50 100 150 0.03 3 5 10 50 100 PW (mS) Ta (C) VCE (V) 163 |
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