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| Power Transistors 2SC3507 Silicon NPN triple diffusion planar type For high breakdown voltage high-speed switching Unit: mm s Features q q q q (TC=25C) Ratings 1000 1000 800 7 10 5 3 80 3 150 -55 to +150 Unit V V V V A A A W C C 16.20.5 12.5 3.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature Symbol VCBO VCES VCEO VEBO ICP IC IB PC Tj Tstg 21.00.5 15.00.2 High-speed switching High collector to base voltage VCBO Satisfactory linearity of foward current transfer ratio hFE Full-pack package which can be installed to the heat sink with one screw 0.7 15.00.3 11.00.2 5.00.2 3.2 3.20.1 2.00.2 2.00.1 1.10.1 5.450.3 10.90.5 1 2 3 0.60.2 1:Base 2:Collector 3:Emitter TOP-3 Full Pack Package(a) s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Collector to emitter voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Turn-on time Storage time Fall time *V CEO(sus) (TC=25C) Symbol ICBO IEBO VCEO(sus)* hFE VCE(sat) VBE(sat) fT ton tstg tf Conditions VCB = 1000V, IE = 0 VEB = 7V, IC = 0 IC = 0.5A, L = 50mH VCE = 5V, IC = 3A IC = 3A, IB = 0.6A IC = 3A, IB = 0.6A VCE = 5V, IC = 0.5A, f = 1MHz IC = 3A, IB1 = 0.6A, IB2 = -1.2A, VCC = 250V 6 1 2.5 0.5 800 6 1.5 1.5 V V MHz s s s min typ max 50 50 Unit A A V Test circuit 50/60Hz mercury relay L 50mH 120 6V 1 15V X Y G 1 Power Transistors PC -- Ta 100 10 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3W) TC=25C 2SC3507 IC -- VCE Collector to emitter saturation voltage VCE(sat) (V) 100 IC/IB=5 30 10 3 TC=100C 1 25C 0.3 -25C 0.1 0.03 0.01 0.01 0.03 VCE(sat) -- IC Collector power dissipation PC (W) 60 Collector current IC (A) 80 (1) 8 6 IB=800mA 500mA 400mA 300mA 200mA 40 4 20 (2) (3) 0 0 25 50 75 100 125 150 2 100mA 20mA 0 0 2 4 6 8 10 12 0.1 0.3 1 3 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VBE(sat) -- IC 100 1000 IC/IB=5 30 10 3 1 0.3 0.1 0.03 0.01 0.01 0.03 TC=-25C 100C 25C hFE -- IC 1000 VCE=5V 300 100 30 10 3 1 0.3 0.1 0.01 0.03 fT -- IC VCE=5V f=1MHz TC=25C Base to emitter saturation voltage VBE(sat) (V) Forward current transfer ratio hFE 100 30 10 3 1 0.3 0.1 0.01 0.03 TC=100C 25C -25C 0.1 0.3 1 3 10 0.1 0.3 1 3 10 Transition frequency fT (MHz) 300 0.1 0.3 1 3 10 Collector current IC (A) Collector current IC (A) Collector current IC (A) ton, tstg, tf -- IC 10 Area of safe operation (ASO) 100 30 Non repetitive pulse TC=25C ICP IC 3 1 0.3 0.1 0.03 0.01 8 1 3 10 30 100 300 1000 10ms DC t=1ms Switching time ton,tstg,tf (s) 3 Collector current IC (A) tstg 1 10 0.3 ton tf 0.1 Pulsed tw=1ms Duty cycle=1% IC/IB=5 (2IB1=-IB2) VCC=250V TC=25C 0 1 2 3 4 5 6 7 0.03 0.01 Collector current IC (A) Collector to emitter voltage VCE (V) 2 Power Transistors Area of safe operation, reverse bias ASO 16 14 Lcoil=100H IC/IB=5 (2IB1=-IB2) TC=125C 2SC3507 Reverse bias ASO measuring circuit L coil IB1 T.U.T IC Collector current IC (A) 12 10 8 6 4 2 0 0 200 400 600 800 1000 1200 1400 1600 ICP Vin -IB2 VCC IC tW Vclamp Collector to emitter voltage VCE (V) Rth(t) -- t 103 (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink Thermal resistance Rth(t) (C/W) 102 (1) 10 (2) 1 10-1 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 3 |
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