 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SC4073 Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SC4073 500 400 10 5(Pulse10) 2 30(Tc=25C) 150 -55 to +150 Unit V V V A A W C C Application : Switching Regulator and General Purpose External Dimensions FM20(TO220F) 4.00.2 10.10.2 4.20.2 2.8 c0.5 sElectrical Characteristics Symbol ICBO IEBO V(BR)CEO hFE VCE(sat) VBE(sat) fT COB Conditions VCB=500V VEB=10V IC=25mA VCE=4V, IC=2A IC=2A, IB=0.4A IC=2A, IB=0.4A VCE=12V, IE=-0.3A VCB=10V, f=1MHz 100max 100max 400min 10 to 30 0.5max 1.3max 10typ 30typ (Ta=25C) 2SC4073 Unit A V V V MHz pF 13.0min 16.90.3 8.40.2 A 1.350.15 1.350.15 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.20.2 2.40.2 sTypical Switching Characteristics (Common Emitter) VCC (V) 200 RL () 100 IC (A) 2 VBB1 (V) 10 VBB2 (V) -5 IB1 (A) 0.2 IB2 (A) -0.4 ton (s) 1max tstg (s) 3max tf (s) 0.5max 2.54 3.9 BCE IC - VCE Characteristics (Typical) 5 m 60 0m A 400 mA VCE(sat),VBE(sat) - IC Temperature Characteristics (Typical) (IC/IB=5) Collector-Emitter Saturation Voltage V CE(s a t)( V ) Base-Emitter Saturation Voltage V B E (s a t)( V ) I C - V BE Temperature Characteristics (Typical) (VCE=4V) 5 A Collector Current I C( A) 300m A 3 Collector Current I C (A) 4 IB =8 00 2 4 200mA 3 V B E( sat) 1 -55C (Case Temp) p) 25C (Case Tem Temp) 5C (Case 12 12 5 Tem emp se T (Ca se as C V C E( sat) 0 0.01 0.05 0.1 0.5 1 -5 C 5 0 0 1 2 3 4 5 0 0 0.2 0.4 125 C 0.6 25C 1 0.8 -55C (C 1 25 50mA (Ca (Cas eT C e Te 2 100mA 2 emp ) ) mp) p) 0.2 0.80.2 a b o3.30.2 Weight : Approx 2.0g a. Type No. b. Lot No. 1.0 1.2 1.4 Collector-Emitter Voltage V C E( V) Collector Current I C( A) Base-Emittor Voltage V B E( V) (VCE=4V) 50 5 j- a( C/W) hFE - IC Characteristics (Typical) t o n*t s tg *t f ( s) 125C DC Curr ent Gain h FE 25C -55C t on* t stg * t f - I C Characteristics (Typical) j-a - t Characteristics 5 VCC 200V I C: IB1:-I B 2= 10:1:2 1 0.5 t on tf 0.1 0.1 Transient Thermal Resistance tstg Swi tchi ng T im e 1 10 0.5 0.3 5 0.01 0.05 0.1 0.5 1 5 0.5 1 5 1 10 Time t(ms) 100 1000 Collector Current I C( A) Collector Current I C( A) Safe Operating Area (Single Pulse) 20 10 5 10 1m s 10 Reverse Bias Safe Operating Area 20 10 30 P c - T a Derating s 5 Collector Cur rent I C( A) Maximu m Power Di ssip ation P C( W) 0 W Collector Curren t I C( A) m ith s 20 In fin 1 0.5 D C ite 1 0.5 he at si nk 0.1 0.05 Without Heatsink Natural Cooling 10 0.1 0.05 Without Heatsink Natural Cooling L=3mH IB2=-0.5A Duty:less than1% 2 0.01 2 5 10 50 100 500 0.01 5 10 50 100 500 0 0 Without Heatsink 25 50 75 100 125 150 Collector-Emitter Voltage V C E( V) Collector-Emitter Voltage V C E( V) Ambient Temperature Ta(C) 87 |
Price & Availability of 2SC4073
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |