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BAT 62-03W Silicon Schottky Diode * Low Barrier diode for detectors up to GHz frequencies ESD: ElectroStatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code Q62702-A1028 Pin Configuration 1=A 2=C Package SOD-323 BAT 62-03W L Maximum Ratings Parameter Diode reverse voltage Forward current Junction temperature Storage temperature Total power dissipation Thermal Resistance Junction ambient 1) Symbol Values 40 40 150 - 55 ... + 150 100 Unit V mA C mW VR IF Tj Tstg TS 85C Ptot RthJA RthJS 650 810 K/W Junction - soldering point 1) Package mounted on epoxy pcb 15mm x 16.7mmm x 0.7mm Semiconductor Group 1 Mar-07-1996 BAT 62-03W Electrical Characteristics at TA=25C, unless otherwise specified Parameter Symbol min. DC characteristics Reverse current Values typ. max. Unit IR 0.58 10 A V 1 VR = 40 V, TA = 25 C Forward voltage VF IF = 2 mA AC Characteristics Diode capacitance CT 0.35 0.1 225 2 0.6 - pF VR = 0 , f = 1 MHz Case capacitance CC - f = 1 MHz Differential resistance R0 - k nH VR = 0 , f = 10 kHz Series inductance chip to ground Ls Semiconductor Group 2 Mar-07-1996 BAT 62-03W Forward current IF = f (VF) TA = parameter Leakage current IR = f (VR) TA = Parameter 10 4 10 3 uA uA IF 10 3 IR TA = 25C TA = 85C TA = 125C TA = -40C 10 2 TA = 125C TA = 85C 10 1 10 2 10 0 TA = 25C 10 1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 V VF 2.0 10 -1 0 5 10 15 20 25 30 V VR 40 Diode capacitance CT = f (VR) f = 1MHz Rectifier voltage V0 = f (Vi) f = 900MHz RL = parameter in 10 4 mV 10 3 0.5 CT pF VA 10 2 0.3 10 1 10 0 0.2 10 -1 0.1 10 -2 RL=5k RL=20k RL=100k RL=200k RL=1M 0.0 0 5 10 15 20 V 30 10 -3 0 10 10 1 10 2 10 3 VR mV VE Semiconductor Group 3 Mar-07-1996 BAT 62-03W Package Semiconductor Group 4 Mar-07-1996 |
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