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| GaAs-IR-Lumineszenzdiode GaAs Infrared Emitter LD 271, LD 271 H LD 271 L, LD 271 HL Area not flat 0.6 0.4 9.0 8.2 7.8 7.5 2.54 mm spacing 1.3 1.0 5.9 5.5 1.0 0.7 Cathode Approx. weight 0.5 g Chip position GEX06239 Cathode 29 27 9.0 8.2 spacing 2.54mm 0.4 0.8 1.8 1.2 7.8 7.5 5.9 5.5 0.4 0.6 Area not flat Chip position Approx. weight 0.2 g 4.8 4.2 o4.8 o5.1 0.6 0.4 GEO06645 Mae in mm, wenn nicht anders angegeben/Dimensions in mm, unless otherwise specified. Wesentliche Merkmale q GaAs-IR-LED, hergestellt im Schmelzepitaxieverfahren q Hohe Zuverlassigkeit q Hohe Impulsbelastbarkeit q Lange Anschlusse q Gruppiert lieferbar q Gehausegleich mit SFH 300, SFH 203 Anwendungen q IR-Fernsteuerung von Fernseh- und Rundfunkgeraten, Videorecordern, Lichtdimmern q Geratefernsteuerungen q Lichtschranken fur Gleich- und Wechsellichtbetrieb Semiconductor Group 1 Features q GaAs infrared emitting diode, fabricated in a liquid phase epitaxy process q High reliability q High pulse handling capability q long leads q Available in groups q Same package as SFH 300, SFH 203 Applications q IR remote control of hi-fi and TV-sets, video tape recorders, dimmers q Remote control of various equipment q Photointerrupters 1997-11-01 fex06628 1.8 1.2 14.0 13.0 o5.1 o4.8 4.8 4.2 11.4 11.0 0.6 0.4 LD 271, LD 271 H LD 271 L, LD 271 HL Typ Type LD 271 LD 271 L LD271 H LD271 HL Grenzwerte Maximum Ratings Bezeichnung Description Bestellnummer Ordering Code Q62703-Q148 Q62703-Q833 Q62703-Q256 Q62703-Q838 Gehause Package 5-mm-LED-Gehause (T 1 3/4), graugetontes EpoxyGieharz, Lotspiee im 2.54-mm-Raster (1/10'') 5 mm LED package (T 1 3/4), grey colored epoxy resin lens, solder tabs lead spacing 2.54 mm (1/10'') Symbol Symbol Wert Value - 55 ... + 100 100 5 130 3.5 220 330 Einheit Unit C C V mA A mW K/W Betriebs- und Lagertemperatur Operating and storage temperature range Sperrschichttemperatur Junction temperature Sperrspannung Reverse voltage Durchlastrom Forward current Stostrom, tp = 10 s, D = 0 Surge current Verlustleistung Power dissipation Warmewiderstand Thermal resistance Top; Tstg Tj VR IF IFSM Ptot RthJA Semiconductor Group 2 1997-11-01 LD 271, LD 271 H LD 271 L, LD 271 HL Kennwerte (TA = 25 C) Characteristics Bezeichnung Description Wellenlange der Strahlung Wavelength at peak emission IF = 100 mA, tp = 20 ms Spektrale Bandbreite bei 50 % von Imax Spectral bandwidth at 50 % of Imax IF = 100 mA Abstrahlwinkel Half angle Aktive Chipflache Active chip area Abmessungen der aktive Chipflache Dimensions of the active chip area Abstand Chipoberflache bis Linsenscheitel Distance chip front to lens top Schaltzeiten, Ie von 10 % auf 90 % und von 90 % auf 10 %, bei IF = 100 mA, RL = 50 Switching times, Ie from 10 % to 90 % and from 90 % to 10 %, IF = 100 mA, RL = 50 Kapazitat, VR = 0 V, f = 1 MHz Capacitance Durchlaspannung Forward voltage IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s Sperrstrom, VR = 5 V Reverse current Gesamtstrahlungsflu Total radiant flux IF = 100 mA, tp = 20 ms Temperaturkoeffizient von Ie bzw. e, Temperature coefficient of Ie or e, IF = 100 mA Temperaturkoeffizient von VF, IF = 100 mA Temperature coefficient of VF, IF = 100 mA Temperaturkoeffizient von , IF = 100 mA Temperature coefficient of , IF = 100 mA Symbol Symbol peak Wert Value 950 Einheit Unit nm 55 nm 25 0.25 0.5 x 0.5 4.0 ... 4.6 1 Grad deg. mm2 mm mm s A LxB LxW H tr, tf Co 40 pF VF VF IR e 1.30 ( 1.5) 1.90 ( 2.5) 0.01 ( 1) 18 V V A mW TCI - 0.55 %/K IF = 100 mA TCV TC - 1.5 0.3 mV/K nm/K Semiconductor Group 3 1997-11-01 LD 271, LD 271 H LD 271 L, LD 271 HL Gruppierung der Strahlstarke Ie in Achsrichtung gemessen bei einem Raumwinkel = 0.01 sr Grouping of radiant intensity Ie in axial direction at a solid angle of = 0.01 sr Bezeichnung Description Symbol Symbol Wert Value LD 271 LD 271 L Strahlstarke Radiant intensity IF = 100 mA, tp = 20 ms IF = 1 A, tp = 100 s LD 271 H LD 271 HL Einheit Unit Ie Ie typ. 15 ( 10) 120 > 16 mW/sr mW/sr Relative spectral emission Irel = f () 100 % OHRD1938 Radiant intensity Ie = f (IF) Ie 100 mA OHR01038 Single pulse, tp = 20 s e 10 2 Max. permissible forward current IF = f (TA) 200 OHO00364 rel e (100 mA) F mA 160 80 10 1 60 140 120 100 40 80 10 0 60 40 20 20 0 880 920 960 1000 nm 1060 10 -1 10 -2 10 -1 10 0 A F 10 1 0 0 20 40 60 80 C 100 TA Semiconductor Group 4 1997-11-01 LD 271, LD 271 H LD 271 L, LD 271 HL Forward current IF = f (VF), single pulse, tp = 20 s 10 1 A OHR01041 Permissible pulse handling capability IF = f (), TC = 25 C, duty cycle D = parameter F 10 4 mA 5 OHR00257 F tp D= tp T F T D= 0.005 0.01 0.02 10 0 typ. max. 0.05 0.1 10 3 0.2 10 -1 5 0.5 DC 10 -2 1 1.5 2 2.5 3 3.5 4 V 4.5 VF 10 2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 s tP 10 2 Radiation characteristics Irel = f () 40 30 20 10 0 1.0 OHR01879 50 0.8 60 0.6 70 0.4 80 90 0.2 0 100 1.0 0.8 0.6 0.4 0 20 40 60 80 100 120 Semiconductor Group 5 1997-11-01 |
Price & Availability of Q62703-Q256
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