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APM3023N
N-Channel Enhancement Mode MOSFET
Features
* * * *
30V/30A, RDS(ON)=15m(typ.) @ VGS=10V RDS(ON)=22m(typ.) @ VGS=5V Super High Dense Cell Design
Pin Description
1
2
3
1
2
3
High Power and Current Handling Capability TO-252.TO-220 and SOT-223 Packages
G D S
G
D
S
Top View of TO-252
Top View of SOT-223
Applications
* *
Switching Regulators Switching Converters
3 2 1
S D G
TO-220 Package
Ordering and Marking Information
A P M 3 023 N
H a n d lin g C o d e Tem p. R ange Package C ode Package C ode U : T O -2 5 2 V : S O T -2 2 3 O p e ra tin g J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 C H a n d lin g C o d e TR : Tape & R eel F : T O -2 2 0
A P M 3 0 2 3 N U /F : :
AP M 3023N XXXXX
XXXXX
- D a te C o d e
AP M 3023N V :
AP M 3023N XXXXX
X X X X X - D a te C o d e
Absolute Maximum Ratings
Symbol VDSS VGSS ID* IDM Drain-Source Voltage Gate-Source Voltage Parameter
(TA = 25C unless otherwise noted)
Rating 30 20 30 70 Unit V A
Maximum Drain Current - Continuous Maximum Drain Current - Pulsed
* Surface Mounted on FR4 Board, t 10 sec.
ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003 1 www.anpec.com.tw
APM3023N
Absolute Maximum Ratings (Cont.)
Symbol Parameter TO-252/TO-220 TA=25C PD Maximum Power Dissipation TA=100C TJ TSTG Maximum Junction Temperature Storage Temperature Range SOT-223 TO-252/TO220 SOT-223
(TA = 25C unless otherwise noted)
Rating 62.5
Unit W
3 25 W 1.2 150 -55 to 150 C C
Electrical Characteristics
Symbol Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa
b
(TA = 25C unless otherwise noted)
Test Condition APM3023N Min. Typ. Max. Unit
Parameter
Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current Drain-Source On-state Resistance Diode Forward Voltage
VGS=0V , IDS=250A VDS=24V , VGS=0V VDS=24V, VGS=0V, Tj= 55C VDS=VGS , IDS=250A VGS=20V , VDS=0V VGS=10V , IDS=20A VGS=5V , IDSs=10A ISD=15A , VGS=0V VDS=15V , IDS= 10A VGS=5V ,
30 1 5 1 1.5 15 22 0.7 15 5.8 3.8 11 18 26 54 30 2 100 20 28 1.3 20
V A V nA m V
Dynamic Qg Total Gate Charge Qgs Qgd td(ON) Tr td(OFF) Tf Ciss Coss Crss Gate-Source Charge Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time Turn-off Delay Time Turn-off Fall Time Input Capacitance Output Capacitance
nC
VDD=15V , IDS=2A , VGEN=10V , RG=6 VGS=0V
17 37 20 1200 220 100
ns
VDS=15V Reverse Transfer Capacitance Frequency=1.0MHz
pF
Notes
a b
: Pulse test ; pulse width 300s, duty cycle 2% : Guaranteed by design, not subject to production testing
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
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APM3023N
Typical Characteristics
Output Characteristics
30
VGS=5,6,7,8,9,10V
40
Transfer Characteristics
VDS=10V
IDS-Drain Current (A)
25
IDS-Drain Current (A)
30
20
VGS=4V
15 10 5
VGS=3V
20
TJ=25C
10
TJ=125C
TJ=-55C
0
0
2
4
6
8
10
0 1.0
1.5
2.0
2.5
3.0
3.5
4.0
VDS-Drain-to-Source Voltage (V)
VGS-Gate-to-Source Voltage (V)
Threshold Voltage vs. Junction Temperature
1.2
On-Resistance vs. Drain Current
0.040
IDS=250A
VGS(th)-Threshold Voltage (V) (Normalized)
1.0
RDS(ON)-On-Resistance ()
0.035 0.030 0.025 0.020 0.015 0.010 0.005
VGS=5V
0.8
VGS=10V
0.6
0. 4 -50 -25
0
25
50
75
100 125 150
0.000 0
5
10
15
20
25
30
Tj-Junction Temperature (C)
IDS-Drain Current (A)
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
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APM3023N
Typical Characteristics (Cont.)
On-Resistance vs. Gate-to-Source Voltage
45
IDS=20A
On-Resistaence vs. Junction Temperature
1.6
RDS (ON)-On-Resistance ()
RDS(ON)-On-Resistance () (Normalized)
40 35 30 25 20 15 10 5 0 3 4 5 6 7 8
VGS=10V ID=12A
1.4
1.2
1.0
0.8
9
10
0.6 -50
-25
0
25
50
75
10 0 12 5 15 0
Gate Voltage (V)
Tj-Junction Temperature (C)
Gate Charge
10
2000
Capacitance Characteristics
Ciss
1000
VGS-Gate-to-Source Voltage (V)
VDS=15V IDS=10A
C-Capacitance (pF)
8
6
500
Coss
4
Crss
2
100
Frequency=1MHz
0
0
5
10
15
20
25
30
0.1
1
10
30
QG-Total Gate Charge (nC)
VDS-Drain-to-Source Voltage (V)
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
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APM3023N
Typical Characteristics (Cont.)
Source-Drain Diode Forward Voltage
100
3000 2500
Single Pulse Power
TO-252 / TO-220
ISD-Source Current (A)
Power (W)
10
2000 1500 1000 500 0 -5 10
1
TJ=125C TJ=25C
TJ=-55C
0.1
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
-4
10
-3
10
-2
10
-1
10
0
10
1
VSD-Source to Drain Voltage
Time (sec)
Single Pulse Power
SOT-223
3000 2500 2000 1500 1000 500 0 -5 10
Power (W)
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Time (sec)
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
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APM3023N
Typical Characteristics (Cont.)
Normalized Thermal Transient Impedence, Junction to Ambient
TO-252 / TO-220
2
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5 D=0.2 D=0.1
0.1
D=0.05 D=0.02 D=0.01 SINGLE PULSE
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50C/W 3.TJM-TA=PDMZthJA
0.01 -5 10
10
-4
10
-3
10
-2
10
-1
10
0
10
1
Square Wave Pulse Duration (sec)
Normalized Thermal Transient Impedence, Junction to Ambient
2
SOT-223
Normalized Effective Transient Thermal Impedance
1
Duty Cycle=0.5 D=0.2 D=0.1
0.1
D=0.05 D=0.02 D=0.01 SINGLE PULSE
1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=42C/W 3.TJM-TA=PDMZthJA
0.01 -5 10
10
-4
10
-3
10
-2
10
-1
10
0
Square Wave Pulse Duration (sec)
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
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APM3023N
Package Information
TO-252( Reference JEDEC Registration TO-252)
E b2 L2 A C1
D H L1 L b e1 C A1
Dim A A1 b b2 C C1 D E e1 H L L1 L2
Mi ll im et er s Min . 2. 1 8 0. 8 9 0. 5 08 5. 2 07 0. 4 6 0. 4 6 5. 3 34 6. 3 5 3. 9 6 9. 3 98 0. 5 1 0. 6 4 0. 8 9 1. 0 2 2. 0 32
7
Inc he s Ma x . 2. 3 9 1. 2 7 0. 8 9 5. 4 61 0. 5 8 0. 5 8 6. 2 2 6. 7 3 5. 1 8 10 . 41 Min . 0. 0 86 0. 0 35 0. 0 20 0. 2 05 0. 0 18 0. 0 18 0. 2 10 0. 2 50 0. 1 56 0. 3 70 0. 0 20 0. 0 25 0. 0 35 0. 0 40 0. 0 80
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Ma x . 0. 0 94 0. 0 50 0. 0 35 0. 2 15 0. 0 23 0. 0 23 0. 2 45 0. 2 65 0. 2 04 0. 4 10
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
APM3023N
Package Information
SOT-223( Reference JEDEC Registration SOT-223)
D B1
A c
a
H
E L K e e1 b A1
B
Dim A A1 B B1 c D E e e1 H L K Min. 1.50 0.02 0.60 2.90 0.28 6.30 3.30
Millimeters Max. 1.80 0.08 0.80 3.10 0.32 6.70 3.70 2.3 BSC 4.6 BSC 6.70 0.91 1.50 0 13
8
Inches Min. 0.06 0.02 0.11 0.01 0.25 0.13 0.09 BSC 0.18 BSC 7.30 1.10 2.00 10 0.26 0.04 0.06 0 13
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Max. 0.07 0.03 0.12 0.01 0.26 0.15
0.29 0.04 0.08 10
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
APM3023N
TO-220 ( Reference JEDEC Registration TO-220)
D Q
R
b E
e b1 e1
L1
H1
L
A F
c
J1
Millimeters Dim A b1 b c D e e1 E F H1 J1 L L1 R Q Min. 3.56 1.14 0.51 0.31 14.23 2.29 4.83 9.65 0.51 5.84 2.03 12.7 3.65 3.53 2.54 Max. 4.83 1.78 1.14 1.14 16.51 2.79 5.33 10.67 1.40 6.86 2.92 14.73 6.35 4.09 3.43 Min. 0.140 0.045 0.020 0.012 0.560 0.090 0.190 0.380 0.020 0.230 0.080 0.500 0.143 0.139 0.100
Inches Max. 0.190 0.070 0.045 0.045 0.650 0.110 0.210 0.420 0.055 0.270 0.115 0.580 0.250 0.161 0.135
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
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APM3023N
Physical Specifications
Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3.
Reflow Condition
(IR/Convection or VPR Reflow)
Reference JEDEC Standard J-STD-020A APRIL 1999
temperature
Peak temperature
183C Pre-heat temperature
Time
Classification Reflow Profiles
Convection or IR/ Convection Average ramp-up rate(183C to Peak) 3C/second max. 120 seconds max Preheat temperature 125 25C) 60 - 150 seconds Temperature maintained above 183C Time within 5C of actual peak temperature 10 -20 seconds Peak temperature range 220 +5/-0C or 235 +5/-0C Ramp-down rate 6 C /second max. 6 minutes max. Time 25C to peak temperature VPR 10 C /second max.
60 seconds 215-219C or 235 +5/-0C 10 C /second max.
Package Reflow Conditions
pkg. thickness 2.5mm and all bgas Convection 220 +5/-0 C VPR 215-219 C IR/Convection 220 +5/-0 C pkg. thickness < 2.5mm and pkg. volume 350 mm pkg. thickness < 2.5mm and pkg. volume < 350mm Convection 235 +5/-0 C VPR 235 +5/-0 C IR/Convection 235 +5/-0 C
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Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
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APM3023N
Reliability test program
Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245C,5 SEC 1000 Hrs Bias @ 125C 168 Hrs, 100% RH, 121C -65C ~ 150C, 200 Cycles
Carrier Tape
Po E P1 P D
t
F W
Bo
Ao
Ko D1
T2
J C A B
T1
Application
A 330 3
B 100 2 D
C 13 0. 5 D1
T1 T2 16.4 + 0.3 2.5 0.5 2 0.5 -0.2 Po P1 Ao
J
W 16+ 0.3 - 0.1 Bo
P 8 0.1 Ko
E 1.75 0.1 t
TO-252
F
7.5 0.1 1.5 +0.1 1.5 0.25 4.0 0.1 2.0 0.1 6.8 0.1 10.4 0.1 2.5 0.1 0.30.05 Application A 3301 SOT-223 F B 621.5 D C 12.75 0.15 D1 J 2 0.6 Po T1 12.4 +0.2 P1 T2 2 0.2 Ao W 12 0.3 Bo P 8 0.1 Ko E 1.75 0.1 t
5.5 0.05 1.5+ 0.1
1.5+ 0.1 4.0 0.1 2.0 0.05 6.9 0.1 7.5 0.1
2.1 0.1 0.30.05
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
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APM3023N
Cover Tape Dimensions
Application TO- 252 SOT- 223 Carrier Width 16 12 Cover Tape Width 13.3 9.3 Devices Per Reel 2500 2500
Customer Service
Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369
Copyright ANPEC Electronics Corp. Rev. A.6 - July., 2003
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