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| N-Channel Enhancement-Mode MOS Transistor CORPORATION 2N7000 / BS170L DESCRIPTION The 2N7000 utilizes Calogic's vertical DMOS technology. The device is well suited for switching applications where BV of 60V and low on resistance (under 5 ohms) are required. The 2N7000 is housed in a plastic TO-92 package. ORDERING INFORMATION Part 2N7000 BS170L X2N7000 Package Plastic TO-92 Plastic TO-92 Sorted Chips in Carriers Temperature Range -55oC to +150oC -55oC to +150oC -55oC to +150oC PIN CONFIGURATION 2N7000 3 1 SOURCE 2 GATE 3 DRAIN 2 1 2 BOTTOM VIEW 1 3 TO-92 (TO-226AA) BS170L 3 1 DRAIN 2 GATE 3 SOURCE 2 1 2 BOTTOM VIEW 3 1 3 12 CD5 PRODUCT SUMMARY V(BR)DSS (V) 60 60 rDS(ON) () 5 5 ID (A) 0.2 0.5 P/N 2N7000 BS170 2N7000 / BS170L CORPORATION ABSOLUTE MAXIMUM RATINGS (TA = 25oC unless otherwise specified) SYMBOL VDS VGS ID IDM PD TJ Tstg TL PARAMETERS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Power Dissipation1 Operating Junction Temperature Range Storage Temperature Range Lead Temperature (1/16" from case for 10 sec.) 1 LIMITS 60 40 0.2 0.13 0.5 0.4 0.16 -55 to 150 -55 to 150 300 UNITS V TEST CONDITIONS TA = 25oC A TA = 100 oC TA = 25oC TA = 100 oC W o C THERMAL RESISTANCE RATINGS SYMBOL RthJA NOTE: THERMAL RESISTANCE Junction-to-Ambient LIMITS 312.5 UNITS K/W 1. Pulse width limited by maximum junction temperature. SPECIFICATIONS1 SYMBOL STATIC V(BR)DSS VGS(th) IGSS IDSS ID(ON) rDS(ON) Drain-Source Breakdown Voltage Gate-Threshold Voltage Gate-Body Leakage Zero Gate Voltage Drain Current On-State Drain Current 3 PARAMETER MIN 60 0.8 TYP2 70 1.9 MAX UNIT TEST CONDITIONS ID = 10A, VGS = 0V VDS = VGS, I D = 1mA VGS = 15V, VDS = 0V VDS = 48V, VGS = 0V TC = 125oC VDS = 10V, VGS = 4.5V 4 3 10 1 1000 V nA A mA 75 3 210 4.8 5.3 5 9 0.4 2.5 4.5 2.5 4.4 0.36 VGS = 4.5V, ID = 75mA TC = 125oC Drain-Source On-Resistance VGS = 10V, ID = 0.5A 4 VGS = 4.5V, ID = 75mA TC = 125oC4 VDS(ON) gFS gOS DYNAMIC Ciss Coss Crss SWITCHING t ON t OFF NOTES: 1. 2. 3. 4. Drain-Source On-Voltage 3 1.25 2.2 3 3, 4 V mS S VGS = 10V, ID = 0.5A VDS = 10V, ID = 0.2A VDS = 5V, ID = 50mA Forward Transconductance 100 170 500 16 60 25 5 Common Source Output Conductance Input Capacitance Output Capacitance 4 11 2 pF VDS = 25V, VGS = 0V, f = 1MHz Reverse Transfer Capacitance Turn-On Time Turn-Off Time TA = 25oC unless otherwise specified. For design aid only, not subject to production testing. Pulse test; PW = 300S, duty cycle 3%. This parameter not registered with JEDEC. 7 7 10 nS 10 VDD = 15V, RL = 25, ID = 0.5A VGEN = 10V, RG = 25 (Switching time is essentially independent of operating temperature) |
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