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| Philips Semiconductors Product specification PowerMOS transistor Isolated version of BUK455-200A/B GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general purpose switching applications. BUK475-200A/B QUICK REFERENCE DATA SYMBOL VDS ID Ptot Tj RDS(ON) PARAMETER BUK475 Drain-source voltage Drain current (DC) Total power dissipation Junction temperature Drain-source on-state resistance MAX. -200A 200 7.6 30 150 0.23 MAX. -200B 200 7 30 150 0.28 UNIT V A W C PINNING - SOT186A PIN 1 2 3 gate drain source DESCRIPTION PIN CONFIGURATION case SYMBOL d g case isolated 123 s LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL VDS VDGR VGS ID ID IDM Ptot Tstg Tj PARAMETER Drain-source voltage Drain-gate voltage Gate-source voltage Drain current (DC) Drain current (DC) Drain current (pulse peak value) Total power dissipation Storage temperature Junction temperature CONDITIONS RGS = 20 k Ths = 25 C Ths = 100 C Ths = 25 C Ths = 25 C MIN. - 55 -200A 7.6 4.8 30 30 150 150 MAX. 200 200 30 -200B 7 4.4 28 UNIT V V V A A A W C C THERMAL RESISTANCES SYMBOL Rth j-hs Rth j-a PARAMETER Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound MIN. TYP. 55 MAX. 4.17 UNIT K/W K/W June 1996 1 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B STATIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL V(BR)DSS VGS(TO) IDSS IDSS IGSS RDS(ON) PARAMETER Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Zero gate voltage drain current Gate source leakage current Drain-source on-state resistance CONDITIONS VGS = 0 V; ID = 0.25 mA VDS = VGS; ID = 1 mA VDS = 200 V; VGS = 0 V; Tj = 25 C VDS = 200 V; VGS = 0 V; Tj =125 C VGS = 30 V; VDS = 0 V VGS = 10 V; BUK475-200A BUK475-200B ID = 7 A MIN. 200 2.1 TYP. 3.0 1 0.1 10 0.2 0.22 MAX. 4.0 10 1.0 100 0.23 0.28 UNIT V V A mA nA DYNAMIC CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL gfs Ciss Coss Crss td on tr td off tf Ld Ls PARAMETER Forward transconductance Input capacitance Output capacitance Feedback capacitance Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time Internal drain inductance Internal source inductance CONDITIONS VDS = 25 V; ID = 7 A VGS = 0 V; VDS = 25 V; f = 1 MHz VDD = 30 V; ID = 3 A; VGS = 10 V; RGS = 50 ; Rgen = 50 Measured from drain lead 6 mm from package to centre of die Measured from source lead 6 mm from package to source bond pad MIN. 6 TYP. 8.4 1400 190 55 18 35 85 35 4.5 7.5 MAX. 1750 250 80 30 60 120 50 UNIT S pF pF pF ns ns ns ns nH nH ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL Visol PARAMETER R.M.S. isolation voltage from all three terminals to external heatsink CONDITIONS f = 50-60 Hz; sinusoidal waveform; R.H. 65% ; clean and dustfree MIN. TYP. MAX. 2500 UNIT V Cisol Capacitance from T2 to external f = 1 MHz heatsink - 10 - pF REVERSE DIODE LIMITING VALUES AND CHARACTERISTICS Ths = 25 C unless otherwise specified SYMBOL IDR IDRM VSD trr Qrr PARAMETER Continuous reverse drain current Pulsed reverse drain current Diode forward voltage Reverse recovery time Reverse recovery charge CONDITIONS IF = 7.6 A ; VGS = 0 V IF = 7.6 A; -dIF/dt = 100 A/s; VGS = 0 V; VR = 30 V MIN. TYP. 1.0 150 1.3 MAX. 7.6 30 1.5 UNIT A A V ns C June 1996 2 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B AVALANCHE LIMITING VALUE Ths = 25 C unless otherwise specified SYMBOL WDSS PARAMETER Drain-source non-repetitive unclamped inductive turn-off energy CONDITIONS ID = 14 A ; VDD 100 V ; VGS = 10 V ; RGS = 50 MIN. TYP. MAX. 100 UNIT mJ 120 110 100 90 80 70 60 50 40 30 20 10 0 PD% Normalised Power Derating with heatsink compound 100 ID / A S/ ID BUK445-200A,B A B tp = 10 us 100 us 1 ms 10 R ( DS O N )= VD 1 DC 10 ms 100 ms 0 20 40 60 80 Ths / C 100 120 140 0.1 1 10 100 VDS / V 1000 Fig.1. Normalised power dissipation. PD% = 100PD/PD 25 C = f(Ths) ID% Normalised Current Derating with heatsink compound Fig.3. Safe operating area. Ths = 25 C ID & IDM = f(VDS); IDM single pulse; parameter tp Zth / (K/W) D= 0.5 1 0.2 0.1 0.05 0.02 BUKx45-lv 120 110 100 90 80 70 60 50 40 30 20 10 0 10 0.1 0.01 0 P D tp D= tp T t 1E+01 0 20 40 60 80 Ths / C 100 120 140 0.001 1E-07 T 1E-05 1E-03 t/s 1E-01 Fig.2. Normalised continuous drain current. ID% = 100ID/ID 25 C = f(Ths); conditions: VGS 10 V Fig.4. Transient thermal impedance. Zth j-hs = f(t); parameter D = tp/T June 1996 3 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B 30 ID / A VGS / V = 10 8 7 20 BUK455-200A 6 15 gfs / S BUK455-200A 20 10 5 10 5 4 0 0 2 4 6 8 10 12 VDS / V 14 16 18 20 0 0 4 8 12 16 ID / A 20 24 28 Fig.5. Typical output characteristics, Tj = 25 C. ID = f(VDS); parameter VGS RDS(ON) / Ohm 4 4.5 5 5.5 6 0.6 8 0.4 10 0.2 0 0 4 8 12 16 ID / A 20 24 28 VGS / V = 20 BUK455-200A Fig.8. Typical transconductance, Tj = 25 C. gfs = f(ID); conditions: VDS = 25 V a Normalised RDS(ON) = f(Tj) 1.0 0.8 2.4 2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.6. Typical on-state resistance, Tj = 25 C. RDS(ON) = f(ID); parameter VGS Fig.9. Normalised drain-source on-state resistance. a = RDS(ON)/RDS(ON)25 C = f(Tj); ID = 7 A; VGS = 10 V VGS(TO) / V 4 max. 28 24 20 16 12 8 4 0 ID / A BUK455-200A 3 typ. min. 2 Tj / C = 150 25 1 0 0 2 4 VGS / V 6 8 10 -60 -40 -20 0 20 40 60 Tj / C 80 100 120 140 Fig.7. Typical transfer characteristics. ID = f(VGS) ; conditions: VDS = 25 V; parameter Tj Fig.10. Gate threshold voltage. VGS(TO) = f(Tj); conditions: ID = 1 mA; VDS = VGS June 1996 4 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B 1E-01 ID / A SUB-THRESHOLD CONDUCTION 30 IF / A BUK455-200A 1E-02 1E-03 2% typ 98 % 20 Tj / C = 150 25 1E-04 10 1E-05 1E-06 0 1 2 VGS / V 3 4 0 0 1 VSDS / V 2 Fig.11. Sub-threshold drain current. ID = f(VGS); conditions: Tj = 25 C; VDS = VGS Fig.14. Typical reverse diode current. IF = f(VSDS); conditions: VGS = 0 V; parameter Tj WDSS% 10000 C / pF BUK4y5-200 120 110 100 90 80 70 60 50 40 30 20 10 0 1000 Ciss Coss 100 Crss 10 0 20 VDS / V 40 20 40 60 80 100 Ths / C 120 140 Fig.12. Typical capacitances, Ciss, Coss, Crss. C = f(VDS); conditions: VGS = 0 V; f = 1 MHz BUK455-200 Fig.15. Normalised avalanche energy rating. WDSS% = f(Ths); conditions: ID = 14 A 12 10 8 6 4 VGS / V + VDS / V =40 VDD L VDS 160 VGS 0 RGS T.U.T. -ID/100 1 0 0 10 20 QG / nC 30 R 01 shunt Fig.13. Typical turn-on gate-charge characteristics. VGS = f(QG); conditions: ID = 14 A; parameter VDS Fig.16. Avalanche energy test circuit. 2 WDSS = 0.5 LID BVDSS /(BVDSS - VDD ) June 1996 5 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B MECHANICAL DATA Dimensions in mm Net Mass: 2 g 10.3 max 3.2 3.0 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 3 1.0 (2x) 0.6 2.54 0.5 2.5 1.3 0.9 0.7 5.08 Fig.17. SOT186A; The seating plane is electrically isolated from all terminals. Notes 1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent damage to MOS gate oxide. 2. Refer to mounting instructions for F-pack envelopes. 3. Epoxy meets UL94 V0 at 1/8". June 1996 6 Rev 1.200 Philips Semiconductors Product specification PowerMOS transistor BUK475-200A/B DEFINITIONS Data sheet status Objective specification Product specification Limiting values Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1996 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. June 1996 7 Rev 1.200 |
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