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| HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6729-B Issued Date : 1992.11.25 Revised Date : 1999.08.01 Page No. : 1/3 HSD880 NPN EPITAXIAL PLANAR TRANSISTOR Description The HSD880 is designed for low frequency power amplifier applications. Features * High DC Current Gain * High Power Dissipation: PC=30W at TC=25C Absolute Maximum Ratings (Ta=25C) * Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 C Junction Temperature ................................................................................... +150 C Maximum * Maximum Power Dissipation Total Power Dissipation (Tc=25C) .................................................................................... 30 W Total Power Dissipation (Ta=25C) ................................................................................... 1.5 W * Maximum Voltages and Currents BVCBO Collector to Base Voltage ...................................................................................... 60 V BVCEO Collector to Emitter Voltage................................................................................... 60 V BVEBO Emitter to Base Voltage ........................................................................................... 7 V IC Collector Current .............................................................................................................. 3 A IB Base Current ................................................................................................................. 0.5 A Characteristics (Ta=25C) Symbol BVCBO BVCEO ICBO IEBO *VCE(sat) *VBE(on) *hFE fT Min. 60 60 60 Typ. 3 Max. 100 100 1 1 300 Unit V V uA uA V V MHz Test Conditions IC=1mA, IE=0 IC=50mA, IB=0 VCB=60V, IE=0 VEB=7V, IC=0 IC=3A, IB=0.3A IC=0.5A, VCE=5V IC=0.5A, VCE=5V IC=500mA, VCE=5V *Pulse Test : Pulse Width 380us, Duty Cycle2% Classification Of hFE Rank Range O 60-120 Y 100-200 GR 150-300 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. Characteristics Curve Current Gain & Collector Current 1000 10000 Spec. No. : HE6729-B Issued Date : 1992.11.25 Revised Date : 1999.08.01 Page No. : 2/3 Saturation Voltage & Collector Current 100 hFE @ VCE=5V Saturation Voltage (mV) 1000 VBE(sat) @ IC=10IB hFE 10 100 VCE(sat) @ IC=10IB 1 1 10 100 1000 10000 10 1 10 100 1000 10000 Collector Current (mA) Collector Current (mA) On Voltage & Collector Current 10000 10.00 Switching Time & Collector Current VCC=30V, IC=10IB1= -10IB2 Switching Times (us) On Voltage (mV) 1.00 Tstg Ton Tf 0.10 1000 VBE(on) @ VCE=5V 100 1 10 100 1000 10000 0.01 0.1 1.0 10.0 Collector Current (mA) Collector Current (A) Capacitance & Reverse-Biased Voltage 1000 100000 Safe Operating Area 10000 Collector Current-IC (mA) Capacitance (pF) 1000 PT=1ms 100 PT=100ms PT=1s 100 10 Cob 10 0.1 1 10 100 1 1 Reverse-Biased Voltage (V) 10 100 Forward Voltage-VCE (V) 1000 HSMC Product Specification HI-SINCERITY MICROELECTRONICS CORP. TO-220AB Dimension Marking : A D B E C HSMC Logo Part Number Date Code Spec. No. : HE6729-B Issued Date : 1992.11.25 Revised Date : 1999.08.01 Page No. : 3/3 Product Series Rank H I G 4 P M 3 2 1 N K Style : Pin 1.Base 2.Collector 3.Emitter O 3-Lead TO-220AB Plastic Package HSMC Package Code : E *:Typical DIM A B C D E G H Inches Min. Max. 0.2197 0.2949 0.3299 0.3504 0.1732 0.185 0.0453 0.0547 0.0138 0.0236 0.3803 0.4047 *0.6398 - Millimeters Min. Max. 5.58 7.49 8.38 8.90 4.40 4.70 1.15 1.39 0.35 0.60 9.66 10.28 *16.25 - DIM I K M N O P Inches Min. Max. *0.1508 0.0295 0.0374 0.0449 0.0551 *0.1000 0.5000 0.5618 0.5701 0.6248 Millimeters Min. Max. *3.83 0.75 0.95 1.14 1.40 *2.54 12.70 14.27 14.48 15.87 Notes : 1.Dimension and tolerance based on our Spec. dated Sep. 07,1997. 2.Controlling dimension : millimeters. 3.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material. 4.If there is any question with packing specification or packing method, please contact your local HSMC sales office. Material : * Lead : 42 Alloy ; solder plating * Mold Compound : Epoxy resin family, flammability solid burning class:UL94V-0 Important Notice: * All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC. * HSMC reserves the right to make changes to its products without notice. * HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems. * HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance. Head Office And Factory : * Head Office (Hi-Sincerity Microelectronics Corp.) : 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C. Tel : 886-2-25212056 Fax : 886-2-25632712, 25368454 * Factory 1 : No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5983621~5 Fax : 886-3-5982931 * Factory 2 : No. 17-1, Ta-Tung Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C Tel : 886-3-5977061 Fax : 886-3-5979220 HSMC Product Specification |
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