 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Philips Semiconductors Product specification Rectifier diodes Schottky barrier FEATURES * Low forward volt drop * Fast switching * Reverse surge capability * High thermal cycling performance * Isolated mounting tab PBYR1045F, PBYR1045X series SYMBOL QUICK REFERENCE DATA VR = 40 V/ 45 V k 1 a 2 IF(AV) = 10 A VF 0.59 V GENERAL DESCRIPTION Schottky rectifier diodes in a plastic envelope with electrically isolated mounting tab. Intended for use as output rectifiers in low voltage, high frequency switched mode power supplies. The PBYR1045F series is supplied in the SOD100 package. The PBYR1045X series is supplied in the SOD113 package. PINNING PIN 1 2 tab DESCRIPTION cathode anode isolated SOD100 case SOD113 case 1 2 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER CONDITIONS PBYR10 PBYR10 VRRM VRWM VR IF(AV) IFRM IFSM Peak repetitive reverse voltage Working peak reverse voltage Continuous reverse voltage Average rectified forward current Repetitive peak forward current Non-repetitive peak forward current Peak repetitive reverse surge current Operating junction temperature Storage temperature Ths 95 C square wave; = 0.5; Ths 112 C square wave; = 0.5; Ths 112 C t = 10 ms t = 8.3 ms sinusoidal; Tj = 125 C prior to surge; with reapplied VRRM(max) pulse width and repetition rate limited by Tj max - 65 MIN. 40F 40X 40 40 40 10 20 100 110 1 150 175 MAX. 45F 45X 45 45 45 UNIT V V V A A A A A C C IRRM Tj Tstg July 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier ISOLATION LIMITING VALUE & CHARACTERISTIC Ths = 25 C unless otherwise specified SYMBOL PARAMETER Visol Peak isolation voltage from both terminals to external heatsink CONDITIONS PBYR1045F, PBYR1045X series MIN. - TYP. MAX. UNIT 1500 V SOD100 package; R.H. 65%; clean and dustfree Visol R.M.S. isolation voltage from SOD113 package; f = 50-60 Hz; both terminals to external sinusoidal waveform; R.H. 65%; clean heatsink and dustfree Capacitance from pin 1 to external heatsink f = 1 MHz - - 2500 V Cisol - 10 - pF THERMAL RESISTANCES SYMBOL PARAMETER Rth j-hs Rth j-a Thermal resistance junction to heatsink Thermal resistance junction to ambient CONDITIONS with heatsink compound in free air MIN. TYP. MAX. UNIT 55 5.5 K/W K/W ELECTRICAL CHARACTERISTICS Tj = 25 C unless otherwise specified SYMBOL PARAMETER VF IR Cd Forward voltage Reverse current Junction capacitance CONDITIONS IF = 10 A; Tj = 125C IF = 20 A; Tj = 125C IF = 20 A VR = VRWM VR = VRWM; Tj = 100C VR = 5 V; f = 1 MHz, Tj = 25C to 125C MIN. TYP. MAX. UNIT 0.5 0.69 0.65 0.2 22 350 0.59 0.75 0.87 1.3 35 V V V mA mA pF July 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier PBYR1045F, PBYR1045X series 10 8 6 Forward dissipation, PF (W) Vo = 0.41 V Rs = 0.016 Ohms PBYR1045X Ths(max) (C) D = 1.0 95 106 100 Reverse current, IR (mA) 125 C PBYR1045 0.5 0.2 0.1 10 100 C 117 1 75 C 50 C 0.1 4 I tp D= tp T 128 2 T t 139 150 15 0 0.01 0 Tj = 25 C 25 Reverse voltage, VR (V) 50 0 5 10 Average forward current, IF(AV) (A) Fig.1. Maximum forward dissipation PF = f(IF(AV)); square current waveform where IF(AV) =IF(RMS) x D. PBYR1045X 1.9 117 Fig.4. Typical reverse leakage current; IR = f(VR); parameter Tj 8 7 6 5 4 3 2 1 0 Forward dissipation, PF (W) Vo = 0.41 V Rs = 0.016 Ohms Ths(max) (C) a = 1.57 106 Cd / pF 1000 PBYR1045 2.2 2.8 4 128 100 139 0 2 4 6 8 Average forward current, IF(AV) (A) 150 10 10 1 10 VR / V 100 Fig.2. Maximum forward dissipation PF = f(IF(AV)); sinusoidal current waveform where a = form factor = IF(RMS) / IF(AV). PBYR1045X Fig.5. Typical junction capacitance; Cd = f(VR); f = 1 MHz; Tj = 25C to 125 C. 50 Forward current, IF (A) Tj = 25 C Tj = 125 C 10 Transient thermal impedance, Zth j-hs (K/W) 40 1 30 typ 20 max 0.1 P D tp D= tp T t 10 0 T 0 0.2 0.4 0.6 0.8 1 Forward voltage, VF (V) 1.2 1.4 0.01 1us 10us 100us 1ms 10ms 100ms 1s 10s pulse width, tp (s) PBYR1045X Fig.3. Typical and maximum forward characteristic IF = f(VF); parameter Tj Fig.6. Transient thermal impedance; Zth j-hs = f(tp). July 1998 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g PBYR1045F, PBYR1045X series 10.2 max 5.7 max 3.2 3.0 0.9 0.5 4.4 max 2.9 max 4.4 4.0 7.9 7.5 17 max seating plane 3.5 max not tinned 4.4 13.5 min k 0.4 M a 0.9 0.7 0.55 max 1.3 5.08 top view Fig.7. SOD100; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier MECHANICAL DATA Dimensions in mm Net Mass: 2 g 3.2 3.0 10.3 max PBYR1045F, PBYR1045X series 4.6 max 2.9 max Recesses (2x) 2.5 0.8 max. depth 2.8 6.4 15.8 19 max. max. seating plane 15.8 max 3 max. not tinned 3 2.5 13.5 min. 1 0.4 M 2 1.0 (2x) 0.6 2.54 5.08 0.5 2.5 0.9 0.7 Fig.8. SOD113; The seating plane is electrically isolated from all terminals. Notes 1. Refer to mounting instructions for F-pack envelopes. 2. Epoxy meets UL94 V0 at 1/8". July 1998 5 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes Schottky barrier DEFINITIONS Data sheet status Objective specification Product specification Limiting values PBYR1045F, PBYR1045X series This data sheet contains target or goal specifications for product development. This data sheet contains final product specifications. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of this specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. (c) Philips Electronics N.V. 1998 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, it is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent or other industrial or intellectual property rights. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. July 1998 6 Rev 1.200 |
Price & Availability of PBYR1040F
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |