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| DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK2410 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2410 is N-Channel MOS Field Effect Transistor designed for high speed switching applications. PACKAGE DIMENSIONS (in millimeters) 10.0 0.3 4.5 0.2 3.2 0.2 2.7 0.2 FEATURES * Low On-Resistance RDS(on)1 = 40 m MAX. (@ VGS = 10 V, ID = 15 A) 15.0 0.3 3 0.1 4 0.2 12.0 0.2 13.5 MIN. RDS(on)2 = 60 m MAX. (@ VGS = 4 V, ID = 15 A) * Low Ciss Ciss = 1500 pF TYP. * High Avalanche Capability Ratings * Built-in G-S Gate Protection Diodes QUALITY GRADE Standard Please refer to "Quality grade on NEC Semiconductor Devices" (Document number IEI-1209) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. 0.7 0.1 2.54 1.3 0.2 1.5 0.2 2.54 0.65 0.1 2.5 0.1 ABSOLUTE MAXIMUM RATINGS (TA = 25 C) Drain to Source Voltage Gate to Source Voltage Drain Current (DC) Drain Current (pulse)* VDSS VGSS ID(DC) ID(pulse) 60 20 30 120 35 2.0 150 30 90 V V A A W W C Gate Drain 123 1. Gate 2. Drain 3. Source MP-45F(ISOLATED TO-220) Total Power Dissipation (Tc = 25 C) PT1 Total Power Dissipation (TA = 25 C) PT2 Channel Temperature Storage Temperature Single Avalanche Current** Single Avalanche Energy** * PW 10 s, Duty Cycle 1 % Tch Tstg IAS EAS -55 to +150 C A mJ Body Diode Gate Protection Diode Source ** Starting Tch = 25 C, RG = 25 , VGS = 20 V 0 The information in this document is subject to change without notice. Document No. TC-2497 (O. D. No. TC-8029) Date Published November 1994 P Printed in Japan (c) 1994 2SK2410 ELECTRICAL CHARACTERISTICS (TA = 25 C) CHARACTERISTIC Drain to Source On-Resistance Drain to Source On-Resistance Gate to Source Cutoff Voltage Forward Transfer Admittance Drain Leakage Current Gate to Source Leakage Current Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL RDS(on)1 RDS(on)2 VGS(off) | yfs | IDSS IGSS Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr 1500 720 190 22 260 130 150 50 5.0 15 1.1 110 320 1.0 15 MIN. TYP. 31 40 1.5 27 10 10 MAX. 40 60 2.0 UNIT m m V S TEST CONDITIONS VGS = 10 V, ID = 15 A VGS = 4 V, ID = 15 A VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 15 A VDS = 60 V, VGS = 0 VGS = 20 V, VDS = 0 VDS = 10 V VGS = 0 f = 1 MHz ID = 15 A VGS(on) = 10 V VDD = 30 V RG = 10 ID = 30 A VDD = 48 V VGS = 10 V IF = 30 A, VGS = 0 IF = 30 A, VGS = 0 di/dt = 100 A/s A A pF pF pF ns ns ns ns nC nC nC V ns nC Test Circuit 1 Avalanche Capability Test Circuit 2 Switching Time D.U.T. RG = 25 PG VGS = 20 0 V IAS ID VDD BVDSS VDS VGS 0 t 50 L VDD PG. D.U.T. RG RG = 10 VGS VGS VGS (on) Wave 010 % VDD Form 90 % ID ID Wave Form 10 % 0 td (on) ton tr RL 90 % 90 % 10 % ID td (off) toff tf t = 1s Duty Cycle 1 % Starting Tch Test Circuit 3 Gate Charge D.U.T. IG = 2 mA PG. 50 RL VDD The application circuits and their parameters are for references only and are not intended for use in actual design-in's. 2 2SK2410 TYPICAL CHARACTERISTICS (TA = 25 C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 dT - Percentage of Rated Power - % PT - Total Power Disslipation - W 50 TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 80 40 60 30 40 20 20 10 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Tc - Case Temperature - C Tc - Case Temperature - C FORWARD BIAS SAFE OPERATING AREA 1000 PW = DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 100 90 VGS =10V VGS = 6 V Pulsed 10 80 ID - Drain Current - A s ID - Drain Current - A ID(pulse) 100 d ite ) Im 0 V L1 n) = ID (DC) (o S DS R t VG P ow (a er Di ss 10 10 0 m s s 70 60 50 40 30 20 VGS = 4 V 1 m m s 10 20 s ipa DC tio n Tc = 25 C 1 Single Pulse 0.1 1 Lim 10 ite d 100 10 0 2 4 6 8 10 12 VDS - Drain to Source Voltage - V VDS - Drain to Source Voltage - V FORWARD TRANSFER CHARACTERISTICS 1000 Pulsed VDS = 10 V ID - Drain Current - A 100 TA = -25 C 25 C 125 C 10 0 5 10 15 VGS - Drain to Source Voltage - V 3 2SK2410 TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth (t) - Transient Thermal Resistance - C/W 100 10 Rth (ch - a) = 62.5 C/W Rth (ch - c) = 3.57 C/W 1 0.1 0.01 10 Single Pulse 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s lyfsl - Forward Transfer Admittance - S 1000 TA = -25 C 25 C 75 C 125 C RDS(on) - Drain to Source On-State Resistance - m FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT VDS = 10 V Pulsed DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 60 50 40 30 ID = 15 A 20 10 0 100 10 1 1 10 ID - Drain Current - A 100 5 10 15 20 25 VGS - Gate to Source Voltage - V RDS(on) - Drain to Source On-State Resistance - m DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT VGS(off) - Gate to Source Cutoff Voltage - V 60 50 40 30 20 10 0 1 10 ID - Drain Current - A 100 VGS = 4 V Pulsed 2.0 GATE TO SOURCE CUTOFF VOLTAGE vs. CHANNEL TEMPERATURE VDS = 10 V ID = 1mA 1.5 VGS = 10 V 1.0 0.5 0 -50 -25 0 25 50 75 100 125 150 Tch - Channel Temperature - C 4 2SK2410 DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE 80 ISD - Diode Forward Current - A 70 60 50 40 30 20 10 ID = 15 A 0 -50 1 0 50 100 150 0 0.5 1.0 1.5 2.0 VGS = 4 V VGS = 10 V 1000 SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed RDS(on) - Drain to Source On-State Resistance - m 100 10 V 10 VGS = 0 Tch - Channel Temperature - C VSD - Source to Drain Voltage - V CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss, Coss, Crss - Capacitance - pF VGS = 0 f = 1 MHz Ciss 1000 Coss Crss 100 1000 td(on), tr, td(off), tf - Switching Time - ns SWITCHING CHARACTERISTICS td(off) 100 tf tr td(on) 10 VDD = 30 V VGS = 10 V RG = 10 1.0 10 100 10 1 10 VDS - Drain to Source Voltage - V 100 1.0 0.1 ID - Drain Current - A REVERSE RECOVERY TIME vs. DRAIN CURRENT 1000 trr - Reverse Recovery time - ns di/dt = 50 A/s VGS = 0 80 DYANMIC INPUT/OUTPUT CHARACTERISTICS 16 ID = 30 A VDS - Drain to Source Voltage - V 60 50 40 30 20 10 0 10 20 30 40 50 60 70 VDS VGS VDD = 48 V 12 10 8 6 4 2 80 VGS - Gate to Source Voltage - V 70 14 100 10 0.1 1.0 10 100 ID - Drain Current - A Qg - Gate Charge - nC 5 2SK2410 SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100 IAS - Single Avalanche Energy -mJ IAS = 30 A dt - Energy Derating Factor - % 80 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 30 V RG = 25 VGS = 20 V 0 IAS 30 A EA 10 S = 90 60 mJ 40 1.0 10 VDD = 30 V VGS = 20 V 0 RG = 25 100 1m 10m 20 0 25 50 75 100 125 150 L - Inductive Load - H Starting Tch - Starting Channel Temperature - C 6 2SK2410 REFERENCE Document Name NEC semiconductor device reliability/quality control system. Quality grade on NEC semiconductor devices. Semiconductor device mounting technology manual. Semiconductor device package manual. Guide to quality assurance for semiconductor devices. Semiconductor selection guide. Power MOS FET features and application switching power supply. Application circuits using Power MOS FET. Safe operating area of Power MOS FET. Document No. TEI-1202 IEI-1209 IEI-1207 IEI-1213 MEI-1202 MF-1134 TEA-1034 TEA-1035 TEA-1037 The diode connected between the gate and source of the transistor serves as a protector against ESD. When this device is actually used, an additional protection circuit is externally required if a voltage exceeding the rated voltage may be applied to this device. 7 2SK2410 [MEMO] No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. The devices listed in this document are not suitable for use in aerospace equipment, submarine cables, nuclear reactor control systems and life support systems. If customers intend to use NEC devices for above applications or they intend to use "Standard" quality grade NEC devices for applications not intended by NEC, please contact our sales people in advance. Application examples recommended by NEC Corporation Standard: Computer, Office equipment, Communication equipment, Test and Measurement equipment, Machine tools, Industrial robots, Audio and Visual equipment, Other consumer products, etc. Special: Automotive and Transportation equipment, Traffic control systems, Antidisaster systems, Anticrime systems, etc. M4 92.6 |
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