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| (R) BYV255V HIGH EFFICIENCY FAST RECOVERY RECTIFIER DIODES FEATURES n n n n n n SUITED FOR SMPS VERY LOW FORWARD LOSSES NEGLIGIBLE SWITCHING LOSSES HIGH SURGE CURRENT CAPABILITY HIGH AVALANCHE ENERGY CAPABILITY INSULATED : Insulating voltage = 2500 VRMS Capacitance = 55 pF K2 A2 K1 A1 DESCRIPTION Dual rectifier suited for switchmode power supply and high frequency DC to DC converters. Packaged in ISOTOPTM this device is intended for use in low voltage, high frequency inverters, free wheeling and polarity protection applications. ISOTOP (Plastic) ABSOLUTE MAXIMUM RATINGS Symbol IF(RMS) IF(AV) IFSM Tstg Tj RMS forward current Average forward current = 0.5 Surge non repetitive forward current Storage and junction temperature range Tc=110C tp=10ms sinusoidal Parameter Per diode Per diode Per diode Value 150 100 1600 - 40 to + 150 - 40 to + 150 Unit A A A C C Symbol VRRM Parameter Repetitive peak reverse voltage Value 200 Unit V ISOTOP is a trademark of STMicroelectronics. May 2000 - Ed : 2E 1/5 BYV255V THERMAL RESISTANCE Symbol Rth (j-c) Junction to case Parameter Per diode Total Rth (c) Coupling Value 0.4 0.25 0.1 C/W Unit C/W When the diodes 1 and 2 are used simultaneously : Tj-Tc (diode 1) = P(diode 1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) ELECTRICAL CHARACTERISTICS (Per diode) STATIC CHARACTERISTICS Symbol IR * Tj = 25C Tj = 100C VF ** Tj = 125C Tj = 125C Tj = 25C IF = 100 A IF = 200 A IF = 200 A Test Conditions VR = VRRM Min. Typ. Max. 100 10 0.85 1.00 1.15 Unit A mA V Pulse test : * tp = 5 ms, duty cycle < 2 % ** tp = 380 s, duty cycle < 2 % RECOVERY CHARACTERISTICS Symbol trr Tj = 25C Test Conditions IF = 0.5A IR = 1A IF = 1A VR = 30V tfr VFP Tj = 25C Tj = 25C IF = 1A VFR = 1.1 x VF IF = 1A Irr = 0.25A dIF/dt = -50A/s tr = 5 ns tr = 5 ns 10 1.5 Min. Typ. Max. 55 80 ns V Unit ns TURN-OFF SWITCHING CHARACTERISTICS Symbol IRM Tj = 100C Test Conditions IF = 100A Lp (R) 0.05H Vcc (R) 0.6 VRRM dIF/dt = -200A/s dIF/dt = -400A/s 24 Min. Typ. Max. 16 Unit A 2/5 BYV255V Fig.1 : Average forward power dissipation versus average forward current. P F(av)(W) =0.5 =1 Fig.2 : Peak current versus form factor. 120 110 100 90 80 70 60 50 40 30 20 10 0 0 =0.2 =0.1 =0.05 T I F(av)(A) =tp/T tp 20 40 60 80 100 120 500 450 P=40W T 400 IM 350 P=70W =tp/T 300 tp 250 200 P=100W 150 100 P=20W 50 0 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 IM(A) Fig.3 : Forward voltage drop versus forward current (maximum values). VFM(V) Fig.4 : Relative variation of thermal impedance junction to case versus pulse duration. 1.0 K Zth(j-c) (tp. ) K= Rth(j-c) =0 . 5 =0 . 2 =0 . 1 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 IFM(A) Tj=125 oC 0.5 T 0.2 Single pulse 1 10 100 1000 0.1 1.0E-03 1.0E-02 tp(s) 1.0E-01 =t p/T tp 1. 0E+0 0 Fig.5 : Non repetitive surge peak forward current versus overload duration. I M(A) Fig.6 : Average current versus temperature. (duty cycle : 0.5) IF(av)(A) ambient 1000 900 800 700 600 500 400 300 IM 200 100 0 0.001 120 100 Rth(j-a)=Rth(j-c) 80 Tc=25 oC 60 =0.5 T Tc=75 o C t =0.5 40 20 =tp/T tp t(s) 0.01 0.1 Tc=110 o C Tamb( o C) 1 0 0 20 40 60 80 100 120 140 160 3/5 BYV255V Fig.7 : Junction capacitance versus reverse voltage applied (Typical values). Fig.8 : Recovery charges versus dIF/dt. 800 750 C(pF) F=1Mhz Tj=25 oC QRR(uC) 2 90%CONFIDENCE Tj=100 OC IF=IF(av) 1 700 650 600 550 500 1 0.2 0.5 VR(V) 10 100 200 dIF/dt(A/us) 0.1 10 20 50 100 200 500 Fig.9 : Peak reverse current versus dIF/dt. Fig.10 : Dynamic parameters versus junction temperature. IRM(A) 50 90%CONFIDENCE 1.50 1.25 1.00 QRR;IRM[Tj]/QRR;IRM[Tj=100 o C TYPICAL VALUE S IF=IF(av) 20 Tj=100 OC 10 0.75 5 IRM 0.50 2 QRR 0.25 dIF/dt(A/us) 1 10 20 50 Tj( o C) 500 100 200 0.00 0 25 50 75 100 125 150 4/5 BYV255V PACKAGE MECHANICAL DATA ISOTOP DIMENSIONS REF. A A1 B C C2 D D1 E E1 E2 G G1 G2 F F1 P P1 S n Millimeters Min. Max. 11.80 12.20 8.90 9.10 7.8 8.20 0.75 0.85 1.95 2.05 37.80 38.20 31.50 31.70 25.15 25.50 23.85 24.15 24.80 typ. 14.90 15.10 12.60 12.80 3.50 4.30 4.10 4.30 4.60 5.00 4.00 4.30 4.00 4.40 30.10 30.30 Inches Min. 0.465 0.350 0.307 0.030 0.077 1.488 1.240 0.990 0.939 0.976 0.587 0.496 0.138 0.161 0.181 0.157 0.157 1.185 Max. 0.480 0.358 0.323 0.033 0.081 1.504 1.248 1.004 0.951 typ. 0.594 0.504 0.169 0.169 0.197 0.69 0.173 1.193 n n n Marking : Type number Cooling method : C Weight : 27 g Epoxy meets UL94, V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2000 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com 5/5 |
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