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FDFS2P102A August 2001 FDFS2P102A Integrated P-Channel PowerTrench MOSFET and Schottky Diode General Description The FDFS2P102A combines the exceptional performance of Fairchild's PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in an SO-8 package. This device is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low onstate resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies. Features * -3.3 A, -20V RDS(ON) = 125 m @ VGS = -10 V RDS(ON) = 200 m @ VGS = -4.5 V * VF < 0.39 V @ 1 A (TJ = 125C) VF < 0.47 V @ 1 A VF < 0.58 V @ 2 A * Schottky and MOSFET incorporated into single power surface mount SO-8 package * Electrically independent Schottky and MOSFET pinout for design flexibility D C C D A1 A2 G 8C 7C 6D 5D S3 G4 SO-8 Pin 1 S A A Absolute Maximum Ratings Symbol VDSS VGSS ID PD MOSFET Drain-Source Voltage MOSFET Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25oC unless otherwise noted Parameter Ratings -20 20 (Note 1a) Units V V A W -3.3 -10 2 1.6 1 0.9 Power Dissipation for Dual Operation Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG VRRM IO Operating and Storage Junction Temperature Range Schottky Repetitive Peak Reverse Voltage Schottky Average Forward Current (Note 1a) -55 to +150 20 1 C V A Package Marking and Ordering Information Device Marking FDFS2P102A Device FDFS2P102A Reel Size 13'' Tape width 12mm Quantity 2500 units 2001 Fairchild Semiconductor Corporation FDFS2P102A Rev A1(W) FDFS2P102A Electrical Characteristics Symbol BVDSS BVDSS TJ IDSS IGSSF IGSSR VGS(th) VGS(th) TJ RDS(on) TA = 25C unless otherwise noted Parameter Drain-Source Breakdown Voltage Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate-Body Leakage, Forward Gate-Body Leakage, Reverse (Note 2) Test Conditions VGS = 0 V, ID = -250 A ID = -250 A,Referenced to 25C VDS = -16 V, VGS = 20 V, VGS = -20 V, VGS = 0 V VDS = 0 V VDS = 0 V Min -20 Typ Max Units V Off Characteristics -23 -1 100 -100 -1 -1.8 4.4 96 152 137 -10 4.6 182 60 24 5 14 11 2 VDS = -10 V, VGS = -5 V ID = -3.3 A, 2.1 1.0 0.6 -1.3 (Note 2) mV/C A nA nA V mV/C 125 200 190 m On Characteristics Gate Threshold Voltage Gate Threshold Voltage Temperature Coefficient Static Drain-Source On-Resistance On-State Drain Current Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance (Note 2) VDS = VGS, ID = -250 A ID = -250 A,Referenced to 25C VGS = -10 V, ID = -3.3 A VGS = -4.5 V, ID = -2.5 A VGS=-10 V, ID =-3.3A, TJ=125C VGS = -10 V, VDS = -5 V VDS = -5V, ID = -3.3 A -3 ID(on) gFS Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd IS VSD IR VF A S pF pF pF 10 52 20 4 3.0 ns ns ns ns nC nC nC A V A mA V Dynamic Characteristics VDS = -10 V, f = 1.0 MHz V GS = 0 V, Switching Characteristics Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge VDD = -10 V, VGS = -10 V, ID = -1 A, RGEN = 6 Drain-Source Diode Characteristics and Maximum Ratings Maximum Continuous Drain-Source Diode Forward Current Drain-Source Diode Forward Voltage Reverse Leakage Forward Voltage VGS = 0 V, VR = 20 V IF = 1 A IF = 2 A IS = -1.3 A -0.8 -1.2 50 18 0.47 0.39 0.58 0.53 Schottky Diode Characteristics TJ = 25C TJ = 125C TJ = 25C TJ = 125C TJ = 25C TJ = 125C FDFS2P102A Rev A1(W) FDFS2P102A Thermal Characteristics RJA RJC Thermal Resistance, Junction-to-Ambient Thermal Resistance, Junction-to-Case (Note 1a) (Note 1) 78 40 C/W C/W Notes: 1. RJA is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. RJC is guaranteed by design while RCA is determined by the user's board design. a) 78C/W when mounted on a 2 0.5in pad of 2 oz copper b) 125C/W when mounted on a 0.02 in2 pad of 2 oz copper c) 135C/W when mounted on a minimum pad. Scale 1 : 1 on letter size paper 2. Pulse Test: Pulse Width < 300s, Duty Cycle < 2.0% FDFS2P102A Rev A1(W) FDFS2P102A Typical Characteristics 10 -ID, DRAIN-SOURCE CURRENT (A) -7.0V -6.0V -5.0V -4.5V -4.0V RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE VGS = -10V 8 2.2 2 1.8 1.6 1.4 1.2 1 0.8 0 1 2 3 4 5 0 2 4 6 8 10 -VDS, DRAIN-SOURCE VOLTAGE (V) - ID, DRAIN CURRENT (A) -4.5V -5.0V -6.0V -7.0V -10V VGS = -4.0V 6 4 -3.5V 2 0 Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with Drain Current and Gate Voltage. 0.52 RDS(ON), ON-RESISTANCE (OHM) 1.6 RDS(ON), NORMALIZED DRAIN-SOURCE ON-RESISTANCE ID = -3.3A VGS = -10V 0.46 0.4 0.34 0.28 0.22 0.16 0.1 0.04 TA = 25oC TA = 125oC ID = -1.7A A 1.4 1.2 1 0.8 0.6 -50 -25 0 25 50 75 100 o 125 150 2 4 6 8 10 TJ, JUNCTION TEMPERATURE ( C) -VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. On-Resistance Variation with Temperature. 10 VDS = -5V -ID, DRAIN CURRENT (A) 8 25oC 125oC 6 -IS, REVERSE DRAIN CURRENT (A) TA = -55oC Figure 4. On-Resistance Variation with Gate-to-Source Voltage. 100 10 1 0.1 0.01 0.001 0.0001 TA = 125oC 25oC -55oC VGS = 0V 4 2 0 1 2 3 4 5 -VGS, GATE TO SOURCE VOLTAGE (V) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 -VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature. FDFS2P102A Rev A1(W) FDFS2P102A Typical Characteristics 10 -VGS, GATE-SOURCE VOLTAGE (V) ID = -3.3A 8 -15V 6 VDS = -5V -10V CAPACITANCE (pF) 300 250 CISS 200 150 100 50 CRSS 0 0 1 2 Qg, GATE CHARGE (nC) 3 4 0 5 10 15 20 -VDS, DRAIN TO SOURCE VOLTAGE (V) f = 1MHz VGS = 0 V 4 COSS 2 0 Figure 7. Gate Charge Characteristics. IR, REVERSE LEAKAGE CURRENT (A) Figure 8. Capacitance Characteristics. IF, FORWARD LEAKAGE CURRENT (A) 10 TJ = 125oC 1 TJ = 25oC 0.1 1.0E-02 TJ = 125oC 1.0E-03 1.0E-04 1.0E-05 1.0E-06 1.0E-07 0 5 10 15 20 VR, REVERSE VOLTAGE (V) TJ = 25oC 0.01 0.001 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 VF, FORWARD VOLTAGE (V) Figure 9. Schottky Diode Forward Voltage. 1 D = 0.5 Figure 10. Schottky Diode Reverse Current. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE R JA (t) = r(t) + R JA R JA = 135 C/W P(pk) t1 0.05 0.02 0.01 SINGLE PULSE 0.2 0.1 0.1 t2 T J - T A = P * R JA (t) Duty Cycle, D = t1 / t2 0.01 0.001 0.01 0.1 1 t 1 , TIME (sec) 10 100 1000 Figure 11. Transient Thermal Response Curve. Thermal characterization performed using the conditions described in Note 1c. Transient thermal response will change depending on the circuit board design. FDFS2P102A Rev A1(W) TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM DISCLAIMER FAST FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM OPTOPLANARTM PACMANTM POPTM Power247TM PowerTrench QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SILENT SWITCHER SMART STARTTM STAR*POWERTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogicTM TruTranslationTM UHCTM UltraFET VCXTM STAR*POWER is used under license FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life 1. Life support devices or systems are devices or support device or system whose failure to perform can systems which, (a) are intended for surgical implant into be reasonably expected to cause the failure of the life the body, or (b) support or sustain life, or (c) whose support device or system, or to affect its safety or failure to perform when properly used in accordance with instructions for use provided in the labeling, can be effectiveness. reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Preliminary First Production No Identification Needed Full Production Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H3 |
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