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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1 DESCRIPTION
The H11AG series consists of a Gallium-AluminumArsenide IRED emitting diode coupled with a silicon phototransistor in a dual in-line package. This device provides the unique feature of the high current transfer ratio at both low output voltage and low input current. This makes it ideal for use in low power logic circuits, telecommunications equipment and portable electronics isolation applications.
H11AG2
H11AG3
6 1
6
SCHEMATIC
FEATURES
* High efficiency low degradation liquid epitaxial IRED * Logic level compatible, input and output currents, with CMOS and LS/TTL * High DC current transfer ratio at low input currents * Underwriters Laboratory (UL) recognized File #E90700
1
ANODE 1 6 BASE
6 1
CATHODE 2
5 COL
APPLICATIONS
* CMOS driven solid state reliability * Telephone ring detector * Digital logic isolation
N/C 3
4 EMITTER
ABSOLUTE MAXIMUM RATINGS
Parameters TOTAL DEVICE Storage Temperature Operating Temperature Lead Solder Temperature Total Device Power Dissipation @ 25C (LED plus detector) Derate Linearly From 25C EMITTER Continuous Forward Current Reverse Voltage Forward Current - Peak (1 s pulse, 300 pps) LED Power Dissipation 25C Ambient Derate Linearly From 25C DETECTOR Detector Power Dissipation @ 25C Derate Linearly from 25C Continuous Collector Current PD All All 150 2.0 50 mW mW/C mA Symbol TSTG TOPR TSOL PD IF VR IF(pk) PD Device All All All All All All All All Value -55 to +150 -55 to +100 260 for 10 sec 260 3.5 50 6 3.0 75 1.0 Units C C C mW mW/C mA V A mW mW/C
2001 Fairchild Semiconductor Corporation DS300213 1/28/02
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1 ELECTRICAL CHARACTERISTICS
H11AG2
(TA = 0-70C Unless otherwise specified.)
H11AG3
INDIVIDUAL COMPONENT CHARACTERISTICS
Parameters EMITTER Input Forward Voltage Reverse Leakage Current Capacitance DETECTOR Breakdown Voltage Collector to Emitter Collector to Base Emitter to Collector Leakage Current Collector to Emitter Capacitance VCE = 10 V, IF = 0 VCE = 10 V, f = 1 MHz ICEO CCE All All 5 2 10 A pF IC = 1.0 mA, IF = 0 IC = 100 A, IF = 0 IC = 100 A, IF = 0 BVCEO BVCBO BVECO All All All 30 70 7 V V V IF = 1 mA VR = 5 V, TA = 25C VR = 5 V, TA = 70C V = 0, f = 1.0 MHz VF IR IR CJ All All All All 1.5 10 100 100 V A A pF Test Conditions Symbol Device Min Typ Max Units
ISOLATION CHARACTERISTICS
Parameters Input-Output Isolation Voltage Test Conditions II-0 1 A, t = 1 min. Symbol VISO Min 5300 Typ Max Units Vac(rms)
TRANSFER CHARACTERISTICS
DC Characteristics
(TA = 25C Unless otherwise specified.) Symbol CTR Device H11AG1 H11AG2 H11AG3 H11AG1 Min 300 200 100 100 50 20 100 50 .40 Min Typ 5 5 Max V Units S S % Typ Max Units
Test Conditions IF = 1 mA, VCE = 5 V
Current Transfer Ratio
IF = 1 mA, VCE = 0.6 V
CTR
H11AG2 H11AG3 H11AG1 H11AG2 All Device All All
IF = 0.2 mA, VCE = 1.5 V Saturation Voltage AC Characteristics Non-Saturated Switching Times Turn-On Time Turn-Off Time IF = 2.0 mA, IC = 0.5 mA Test Conditions RL = 100 , IF = 1 mA, VCC = 5 V RL = 100 , IF = 1 mA, VCC = 5 V
CTR VCE(SAT) Symbol ton toff
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
Figure 1. LED Forward Voltage vs. Forward Current
2.0
Figure 2. Normalized Current Transfer Ratio vs. Forward Current
1.2
1.8
VF - FORWARD VOLTAGE (V)
1.0
1.6
NORMALIZED CTRCE
0.8
1.4
TA = -55 C TA = 25 oC T A = 100 oC
o
0.6
1.2
0.4 NORMALIZED TO: I F = 5mA VCE = 5V o TA = 25 C 1 10 100
1.0
0.2
0.8 0.1 1 10 100 0.1
I F - LED FORWARD CURRENT (mA)
IF - FORWARD CURRENT - mA
Figure 3. Normalized CTR vs. Temperature
1.6 1.4 1.2
NORMALIZED ICE - COLLECTOR - EMITTER CURRENT
Figure 4. Normalized Collector vs. Collector - Emitter Voltage
10
NORMALIZED TO: I F = 5mA V = 5V
CE
NORMALIZED CTR CE
TA = 25 C
o
1.0 0.8 I F = 1mA 0.6 I F = 0.5mA 0.4 0.2 0.0 -60 I F = 0.2mA
I F = 10mA I F = 2mA I F = 5mA
I F = 10mA 1 I F = 5mA I F = 2mA 0.1 I F = 1mA I F = 0.5mA I F = 0.2mA 0.01
0.001
-40
-20
0
20
40
60
80
100
NORMALIZED TO: I F = 5mA VCE = 5V TA = 25 o C
TA - AMBIENT TEMPERATURE -oC
0.0001 0.1
1
VCE - COLLECTOR - EMITTER VOLTAGE - V
10
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
Figure 5. Normalized Collector Base Photocurrent Ratio vs. Forward Current
NORMALIZED ICB - COLLECTOR BASE PHOTOCURRENT
30 10
Figure 6. Normalized Collector - Base Current vs. Temperature
NORMALIZED COLLECTOR - BASE CURRENT
25
I F = 10mA 1 I F = 5mA I F = 2mA I F = 1mA 0.1 I F = 0.5mA
20
15
10 NORMALIZED TO: I F = 5mA VCB = 5V TA = 25 o C
I F = 0.2mA 0.01 NORMALIZED TO: IF = 5mA VCB = 5V o TA = 25 C -40 -20 0 20 40 60 80 100
5
0 0 10 20 30 40 50 60 70 80 90 100
IF - FORWARD CURRENT - mA
0.001 -60
TA - AMBIENT TEMPERATURE - oC
Figure 7. Collector-Emitter Dark Current vs. Ambient Temperature
10000
1000
I F = 0mA VCE = 10V
ICEO - DARK CURRENT (nA)
100
10
1
0.1 0 10 20 30 40 50 60 70 80 90 100
TA - AMBIENT TEMPERATURE ( oC)
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
47
25A LOAD
75K 1.5M +5V 15K H11AG1 2N4256 150pF CMOS CONTROL 0.16mA 22K
47
SC160B 120V 60Hz SUPPLY V130LA20A
C203D DT230H (4) 0.1
Figure 8. CMOS Input, 3KW, Zero Voltage Switching Solid State Relay
The H11AG1's superior performance at low input currents allows standard CMOS logic circuits to directly operate a 25A solid state relay. Circuit operation is as follows: power switching is provided by the SC160B, 25A triac. Its gate is controlled by the C203B via the DT230H rectifier bridge. The C203B turn-on is inhibited by the 2N4256 when line voltage is above 12V and/or the H11AG is off. False trigger and dv/dt protection are provided by the combination of the MOV varistor and RC snubber network.
3V VCC 10V 47K R1 H11AG1 AC INPUT VOLTAGE 1N148 C1 4093 or 74HC14
INPUT R1 40-90 VRMS 75 K 20 Hz 1/10 W 95-135 VRMS 180 K 60 Hz 1/10 W 200-280 VRMS 390 K 50/60 Hz 1/4 W
C1 0.1 F 100 V 12 F 200 V 6.80 F 400 V
Z 109K 285K 550K
4.7M
C2 0.1
4.7K
DC component of input voltage is ignored due to C1
Figure 9. Telephone Ring Detector/A.C. Line CMOS Input Isolator
The H11AG1 uses less input power than the neon bulb traditionally used to monitor telephone and line voltages. Additionally. response time can be tailored to ignore telephone dial tap, switching transients and other undesired signals by modifying the value of C2. The high impedance to line voltage also can simply board layout spacing requirements.
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
Package Dimensions (Through Hole)
PIN 1 ID.
Package Dimensions (Surface Mount)
0.350 (8.89) 0.330 (8.38)
0.270 (6.86) 0.240 (6.10)
3
2
1
PIN 1 ID.
0.270 (6.86) 0.240 (6.10) SEATING PLANE
0.350 (8.89) 0.330 (8.38) 4 0.070 (1.78) 0.045 (1.14) 0.070 (1.78) 0.045 (1.14) 0.200 (5.08) 0.135 (3.43) 0.200 (5.08) 0.165 (4.18) 0.154 (3.90) 0.100 (2.54) 0.020 (0.51) MIN 0.016 (0.40) 0.008 (0.20) 0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP 0 to 15 0.300 (7.62) TYP 0.022 (0.56) 0.016 (0.41) 0.020 (0.51) MIN 0.100 (2.54) TYP 0.016 (0.41) 0.008 (0.20) 5 6
0.300 (7.62) TYP
0.016 (0.40) MIN 0.315 (8.00) MIN 0.405 (10.30) MAX
Lead Coplanarity : 0.004 (0.10) MAX
Package Dimensions (0.4"Lead Spacing)
Recommended Pad Layout for Surface Mount Leadform
0.270 (6.86) 0.240 (6.10)
0.070 (1.78)
0.060 (1.52)
0.350 (8.89) 0.330 (8.38) 0.070 (1.78) 0.045 (1.14)
SEATING PLANE
0.415 (10.54)
0.100 (2.54) 0.030 (0.76)
0.200 (5.08) 0.135 (3.43)
0.295 (7.49)
0.154 (3.90) 0.100 (2.54)
0.004 (0.10) MIN
0.016 (0.40) 0.008 (0.20)
0.022 (0.56) 0.016 (0.41) 0.100 (2.54) TYP
0 to 15 0.400 (10.16) TYP
NOTE All dimensions are in inches (millimeters)
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
Option
S SD W 300 300W 3S 3SD
Order Entry Identifier
.S .SD .W .300 .300W .3S .3SD
Description
Surface Mount Lead Bend Surface Mount; Tape and reel 0.4" Lead Spacing VDE 0884 VDE 0884, 0.4" Lead Spacing VDE 0884, Surface Mount VDE 0884, Surface Mount, Tape & Reel
Carrier Tape Specifications ("D" Taping Orientation)
12.0 0.1 4.85 0.20 4.0 0.1 0.30 0.05 4.0 0.1 O1.55 0.05 1.75 0.10
7.5 0.1 13.2 0.2 16.0 0.3 9.55 0.20
0.1 MAX
10.30 0.20
O1.6 0.1
User Direction of Feed
NOTE All dimensions are millimeters
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PHOTOTRANSISTOR OPTOCOUPLERS
H11AG1
H11AG2
H11AG3
DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF THE PRESIDENT OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body,or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in labeling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness.
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