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| PD- 91824 IRG4CC20KB IRG4CC20KB IGBT Die in Wafer Form C 600 V Size 2 G E Ultra-Fast-Speed, Short Circuit Rated Speed 6" Wafer Electrical Characteristics ( Wafer Form ) Parameter VCE (on) V(BR)CES VGE(th) ICES IGES Description Collector-to-Emitter Saturation Voltage Colletor-to-Emitter Breakdown Voltage Gate Threshold Voltage Zero Gate Voltage Collector Current Gate-to-Emitter Leakage Current Guaranteed (Min/Max) Test Conditions 4.5V Max. IC = 3.25A, TJ = 25C, V GE = 15V 600V Min. TJ = 25C, ICES = 250A, VGE = 0V 3.0V Min., 6.5V Max. VGE = VCE , TJ =25C, IC =250A 250A Max. TJ = 25C, VCE = 600V 1.1A Max. TJ = 25C, VGE = +/- 20V Mechanical Data Nominal Backmetal Composition, Thickness: Nominal Front Metal Composition, Thickness: Dimensions: Wafer Diameter: Wafer thickness: Relevant Die Mechanical Dwg. Number Minimum Street Width Reject Ink Dot Size Ink Dot Location Recommended Storage Environment: Recommended Die Attach Conditions Reference Standard IR packaged part ( for design ) : IRG4BC20K Cr-NiV-Ag (1 kA-2kA-2.5kA ) 99% Al, 1% Si (4 microns) .107" x .134" 150mm, with std. < 100 > flat .015" + / -.003" 01-5239 100 Microns 0.25mm Diameter Minimum Consistent throughout same wafer lot Store in original container, in dessicated nitrogen, with no contamination For optimum electrical results, die attach temperature should not exceed 300C Die Outline www.irf.com 12/4/98 |
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