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* * * * * * * * * THERMAL CHARACTERISTICS MAXIMUM RATINGS
Lead Temperature for Soldering Purpose Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case* Operating and Storage Junction Temperature Range Total Power Dissipation @ TA = 25_C Derate above 25_C Total Power Dissipation* @ TC = 25_C Derate above 25_C Base Current Collector Current -- Continuous -- Peak(2) RMS Isolation Voltage (1) (for 1 sec, R.H. < 30%, TA = 25_C) Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage
(c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data
Preferred devices are Motorola recommended choices for future use and best overall value.
(1) Proper strike and creepage distance must be provided. (2) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. * Measurement made with thermocouple contacting the bottom insulated mounting surface of the package (in a location beneath the die), the device mounted on a heatsink, thermal grease applied and a mounting torque of 6 to 8 inSlbs.
For Isolated Package Applications
Complementary Power Darlingtons
SEMICONDUCTOR TECHNICAL DATA
MOTOROLA
Designed for general-purpose amplifiers and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink or chassis.
REV 3
Isolated Overmold Package, TO-220 Type Electrically Similar to the Popular 2N6388, 2N6668, TIP102 and TIP107 100 VCEO(sus) 10 A Rated Collector Current No Isolating Washers Required Reduced System Cost High DC Current Gain -- 1000 (Min) @ IC = 5.0 Adc High Isolation Voltage (up to 4500 VRMS) Case 221D is UL Recognized at 3500 VRMS: File #E69369
Characteristic
Rating
v
Test No. 1 Per Figure 14 Test No. 2 Per Figure 15 Test No. 3 Per Figure 16
Symbol
Symbol
TJ, Tstg
VISOL
VCEO
RJC
RJA
VCB
VEB
PD
PD
TL
IC
IB
COMPLEMENTARY SILICON POWER DARLINGTONS 10 AMPERES 100 VOLTS 40 WATTS
MJF6388 * PNP MJF6668*
*Motorola Preferred Devices
- 65 to + 150
CASE 221D-02 UL RECOGNIZED
Value
2.0 0.016
Order this document by MJF6388/D
4500 3500 1500
62.5
Max
40 0.31
260
100
100
3.2
1.0
5.0
10 15
NPN
Watts W/_C
Watts W/_C
_C/W
_C/W
Unit
Unit
Adc
Adc
Vdc
Vdc
Vdc
_C
_C
V
1
IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIII III I I I III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I IIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII
MJF6388 MJF6668
(1) Pulse Test: Pulse Width
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
DYNAMIC CHARACTERISTICS
ON CHARACTERISTICS (1)
OFF CHARACTERISTICS
Collector-Emitter Saturation Voltage (IC = 3.0 Adc, IB = 6.0 mAdc) Collector-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) Collector-Emitter Saturation Voltage (IC = 8.0 Adc, IB = 80 mAdc) Collector-Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc)
DC Current Gain (IC = 3.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 5.0 Adc, VCE = 3.0 Vdc) DC Current Gain (IC = 8.0 Adc, VCE = 4.0 Vdc) DC Current Gain (IC = 10 Adc, VCE = 3.0 Vdc)
Base-Emitter Saturation Voltage (IC = 5.0 Adc, IB = 0.01 Adc) Base-Emitter Saturation Voltage (IC = 10 Adc, IB = 0.1 Adc)
Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc) Collector Cutoff Current (VCE = 100 Vdc, VEB(off) = 1.5 Vdc, TC = 125_C)
Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, f = 1.0 kHz)
Insulation Capacitance (Collector-to-External Heatsink)
Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz)
Small-Signal Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc, ftest = 1.0 MHz)
Base-Emitter On Voltage (IC = 8.0 Adc, VCE = 4.0 Vdc)
Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0)
Collector Cutoff Current (VCB = 100 Vdc, IE = 0)
Collector Cutoff Current (VCE = 80 Vdc, IB = 0)
Collector-Emitter Sustaining Voltage (1) (IC = 30 mAdc, IB = 0)
2
BASE
v 300 s, Duty Cycle v 2.0%.
NPN MJF6388
8k
Characteristic
120
COLLECTOR
EMITTER
Figure 1. Darlington Schematic
MJF6388 MJF6668
Motorola Bipolar Power Transistor Device Data
BASE VCEO(sus) VCE(sat) VBE(sat) VBE(on) Symbol Cc-hs ICBO ICEO IEBO ICEX |hfe| Cob hFE hfe
PNP MJF6668
8k
1000
3000 1000 200 100
Min
100
20
120
--
--
--
-- --
-- -- -- --
--
--
-- --
--
COLLECTOR
EMITTER 3.0 Typ 15000 -- -- -- Max 200 300 2.5 2.8 4.5 2.0 2.0 2.5 3.0 2.0 10 3.0 10 10 -- -- -- Adc mAdc mAdc Adc Adc Unit Vdc Vdc Vdc Vdc pF pF -- -- --
MJF6388 MJF6668
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS D1, MUST BE FAST RECOVERY TYPES, e.g., MUR110 USED ABOVE IB 100 mA MSD6100 USED BELOW IB 100 mA V1 APPROX. +12 V 51 V2 APPROX. -8 V tr, tf 10 ns DUTY CYCLE = 1% RB 8k 120 VCC + 30 V RC TUT
SCOPE
D1
25 s
-4 V
FOR td AND tr, D1 IS DISCONNECTED AND V2 = 0 FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 2. Switching Times Test Circuit
NPN MJF6388
7 5 3 ts t, TIME ( s) tf 1 0.7 0.3 0.2 0.1 0.07 0.1 tr VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C 0.2 10 7 5 3 2 1 0.7 0.5 0.3 0.2 0.1 0.1 tf
PNP MJF6668
VCC = 30 V IC/IB = 250 IB1 = IB2 TJ = 25C ts
tr
t, TIME ( s)
td
td
1 0.5 2 IC, COLLECTOR CURRENT (AMPS)
5
10
0.2
3 0.5 0.7 1 2 0.3 IC, COLLECTOR CURRENT (AMPS)
5
7
10
Figure 3. Typical Switching Times
20 IC, COLLECTOR CURRENT (AMPS) 10 5 3 2 1 0.5 0.3 0.2 0.1 0.05 0.03 0.02 100 s 1 ms
TJ = 150C
dc 5 ms
CURRENT LIMIT SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C (SINGLE PULSE) 1 5 20 30 2 3 10 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100
Figure 4. Maximum Forward Bias Safe Operating Area
Motorola Bipolar Power Transistor Device Data
3
MJF6388 MJF6668
1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 0.5 0.3 0.2 0.1 0.1 0.05 0.03 0.02 0.01 0.01 0.02 0.05 0.1 0.2 0.3 0.5 1 23 5 10 20 30 50 t, TIME (ms) 100 200 300 500 1K 2K 3K 5K 10K 20K 30K 50K 100K 0.05 SINGLE PULSE D = 0.5 0.2 RJC(t) = r(t) RJC RJC = C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) P(pk)
t1
t2
DUTY CYCLE, D = t1/t2
Figure 5. Thermal Response
1 SECOND BREAKDOWN DERATING
POWER DERATING FACTOR
0.8
0.6 THERMAL DERATING
0.4
0.2
0
20
40
60
80
100
120
140
160
There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 4 is based on T J(pk) = l50_C; TC is variable depending on conditions. Secondary breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) < 150_C. TJ(pk) may be calculated from the data in Figure 5. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by secondary breakdown.
TC, CASE TEMPERATURE (C)
Figure 6. Maximum Power Derating
NPN MJF6388
10,000 hfe , SMALL-SIGNAL CURRENT GAIN 5000 3000 2000 1000 500 300 200 100 50 30 20 10 1 2 5 10 20 50 100 f, FREQUENCY (kHz) 200 500 1000 TC = 25C VCE = 4 Vdc IC = 3 Adc 10,000 hFE , SMALL-SIGNAL CURRENT GAIN 5000 2000 1000 500 200 100 50 20 10 1 23
PNP MJF6668
TC = 25C VCE = 4 VOLTS IC = 3 AMPS
5 7 10 20 30 50 70 100 f, FREQUENCY (kHz)
200 300 500 1000
Figure 7. Typical Small-Signal Current Gain
4
Motorola Bipolar Power Transistor Device Data
MJF6388 MJF6668
NPN MJF6388
300 TJ = 25C 200 C, CAPACITANCE (pF) C, CAPACITANCE (pF) 200 300 TJ = 25C
PNP MJF6668
100 70 Cib 50
Cob
100 70 50
Cib
Cob
30 0.1
0.2
0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS)
50
100
30 0.1
0.2
0.5 1 2 5 10 20 VR, REVERSE VOLTAGE (VOLTS)
50
100
Figure 8. Typical Capacitance
20,000 VCE = 4 V 10,000 hFE, DC CURRENT GAIN 5000 3000 2000 1000 500 300 200 0.1 TJ = 150C
20,000 VCE = 4 V 10,000 hFE, DC CURRENT GAIN 7000 5000 3000 2000 25C 1000 700 500 300 200 0.1 TJ = 150C
25C - 55C
- 55C
0.2
0.3
0.5 0.7
1
2
3
5
7
10
0.2
0.3
0.5 0.7
1
2
3
5
7
10
IC, COLLECTOR CURRENT (AMP)
IC, COLLECTOR CURRENT (AMP)
Figure 9. Typical DC Current Gain
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3 TJ = 25C 2.6 IC = 2 A 4A 6A
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
3 TJ = 25C 2.6 IC = 2 A 4A 6A
2.2
2.2
1.8
1.8
1.4 1 0.3
1.4 1 0.3
0.5 0.7
1
2
3
5
7
10
20
30
0.5 0.7
1
2
3
5
7
10
20
30
IB, BASE CURRENT (mA)
IB, BASE CURRENT (mA)
Figure 10. Typical Collector Saturation Region
Motorola Bipolar Power Transistor Device Data
5
MJF6388 MJF6668
NPN MJF6388
3 TJ = 25C 2.5 V, VOLTAGE (VOLTS) V, VOLTAGE (VOLTS) 2.5 3 TJ = 25C
PNP MJF6668
2 VBE(sat) @ IC/IB = 250 1.5 VBE @ VCE = 4 V 1 VCE(sat) @ IC/IB = 250 0.5 0.1
2
1.5
VBE @ VCE = 4 V VBE(sat) @ IC/IB = 250
1 VCE(sat) @ IC/IB = 250 0.5 0.2 0.3 0.5 0.7 1 2 3 5 7 10 0.1 0.2 0.3 0.5 0.7 1 2 3 5 7 10 IC, COLLECTOR CURRENT (AMP) IC, COLLECTOR CURRENT (AMP)
Figure 11. Typical "On" Voltages
+5 V, TEMPERATURE COEFFICIENT (mV/ C) +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.1 *VC for VCE(sat) VB for VBE 25C to 150C - 55C to 25C 0.5 0.7 1 2 3 5 7 10 - 55C to 25C 25C to 150C *IC/IB hFE/3 V, TEMPERATURE COEFFICIENT (mV/ C)
+5 +4 +3 +2 +1 0 -1 -2 -3 -4 -5 0.2 0.3 0.1 IC, COLLECTOR CURRENT (AMP) 0.2 0.3 0.5 0.7 1 23 IC, COLLECTOR CURRENT (AMP) 5 7 10 *VC for VCE(sat) VB for VBE 25C to 150C - 55C to 25C - 55C to 25C 25C to 150C *IC/IB hFE/3
Figure 12. Typical Temperature Coefficients
105 IC, COLLECTOR CURRENT ( A) IC, COLLECTOR CURRENT ( A) 104 103 102 TJ = 150C 101 100 100C REVERSE VCE = 30 V FORWARD
105 REVERSE 104 VCE = 30 V 103 102 101 100 TJ = 150C 100C FORWARD
25C 10-1 - 0.6 - 0.4 - 0.2
0
+ 0.2 + 0.4 + 0.6 + 0.8
+1
+ 1.2 + 1.4
25C 10-1 + 0.6 + 0.4 + 0.2
0
- 0.2 - 0.4 - 0.6 - 0.8
-1
- 1.2 - 1.4
VBE, BASE-EMITTER VOLTAGE (VOLTS)
VBE, BASE-EMITTER VOLTAGE (VOLTS)
Figure 13. Typical Collector Cut-Off Region
6
Motorola Bipolar Power Transistor Device Data
MJF6388 MJF6668
TEST CONDITIONS FOR ISOLATION TESTS*
MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE MOUNTED FULLY ISOLATED PACKAGE
CLIP
CLIP
0.107" MIN LEADS
0.107" MIN LEADS
HEATSINK 0.110" MIN
HEATSINK
HEATSINK
Figure 14. Clip Mounting Position for Isolation Test Number 1
Figure 15. Clip Mounting Position for Isolation Test Number 2
Figure 16. Screw Mounting Position for Isolation Test Number 3
* Measurement made between leads and heatsink with all leads shorted together
MOUNTING INFORMATION
4-40 SCREW PLAIN WASHER
CLIP
HEATSINK COMPRESSION WASHER NUT HEATSINK
Figure 17. Typical Mounting Techniques*
Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions.
** For more information about mounting power semiconductors see Application Note AN1040.
Motorola Bipolar Power Transistor Device Data
7
MJF6388 MJF6668
PACKAGE DIMENSIONS
-T- F Q A
123
SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78
-B-
C S U
H K -Y-
G N L D
3 PL M
J R
0.25 (0.010)
B
M
Y
STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER
CASE 221D-02 TO-220 TYPE ISSUE D
Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer.
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8
Motorola Bipolar Power Transistor Device Data
*MJF6388/D*
MJF6388/D

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Price & Availability of MJF6668

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