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| MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE QM150DY-2HBK * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No; E80276 (N) File No; E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 108 4-6.5 930.25 B2X C2E1 E2 E2 B2 6 B2 E2 480.25 62 B2X 30 B1 E1 C1 10.5 6 15 B1X 9 C2E1 E2 C1 14 8 15.3 25 25 21.5 8 1.8 B1X E1 B1 3-M6 3 17 8 17 8 17 3 Tab#110, t=0.5 16 LABEL 7 30 37 9.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 150 150 1000 8 1500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 1.96~2.94 20~30 470 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=150A, IB=200mA -IC=150A (diode forward voltage) IC=150A, VCE=4V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=150A, IB1=0.3A, -IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 100 4.0 4.0 1.8 -- 2.5 15 3.0 0.125 0.6 0.075 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 250 .6A B=0 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 4 5 7 10 1 Tj=25C Tj=125C VCE=10V COLLECTOR CURRENT IC (A) Tj=25C 200 I 150 DC CURRENT GAIN hFE A 00m IB=4 0mA 0 IB=2 100 IB=4 0mA VCE=4.0V 50 IB=20mA 0 0 1 2 3 4 5 2 3 4 5 7 10 2 2 34 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 3 2 SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 1 BASE CURRENT IB (A) SATURATION VOLTAGE 10 0 7 5 4 3 2 10 -1 7 5 4 3 2.6 Tj=25C VCE=4.0V VBE(sat) VCE(sat) IB=200mA Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 3.0 3.4 3.8 4.2 4.6 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 4 IC=200A 3 IC=150A 2 IC=100A SWITCHING TIME 10 1 7 5 4 3 2 ts 1 Tj=25C Tj=125C 0 10 -2 2 3 4 5 7 10 -12 3 4 5 7 10 0 2 3 4 5 7 10 1 10 0 7 tf 5 4 ton 3 2 10 1 2 3 4 5 7 10 2 VCC=600V IB1=0.3A IB2=-3A Tj=25C Tj=125C 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 3 2 REVERSE BIAS SAFE OPERATING AREA 400 COLLECTOR CURRENT IC (A) ts, tf (s) ts SWITCHING TIME 10 1 7 5 4 3 2 10 0 7 5 4 3 320 Tj=125C IB2=-3A tf 240 160 VCC=600V IC=150A IB1=300mA Tj=25C Tj=125C 3 4 5 7 10 0 2 3 4 5 7 10 1 23 80 0 0 200 400 600 800 1000 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 D C DERATING FACTOR OF F. B. S. O. A. 100 COLLECTOR CURRENT IC (A) tw=50s 100s 90 SECOND BREAKDOWN AREA DERATING FACTOR (%) 80 70 60 50 40 30 20 10 0 0 20 40 60 80 100 120 140 160 COLLECTOR DISSIPATION 200 s 10 1 7 5 3 2 TC=25C NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 0.16 0.14 0.12 1m s VCE (V) CASE TEMPERATURE TC (C) 10 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 Zth (j-c) (C/ W) 0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0.4 0.8 1.2 1.6 Tj=25C Tj=125C 2.0 2.4 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150DY-2HBK HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1500 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 3 2 Irr (A), Qrr (c) 10 2 7 5 3 2 10 2 Irr Qrr 1000 10 1 trr (s) Feb.1999 500 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 10 1 10 0 7 VCC=600V trr 5 IB1=0.3A 3 IB2=-3A Tj=25C 2 Tj=125C 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 710 1 2 3 4 5 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) |
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