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MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
QM150HY-2H
* * * * *
IC Collector current ........................ 150A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271
APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders
OUTLINE DRAWING & CIRCUIT DIAGRAM
Dimensions in mm
108 (7.5) 12 93 46.5
10.5 13 10.5
(7.5)
C
E
C
34
B1
C1 6.5 23
E1 23
C1
E1 B1
5 E1
8
15
8 M5
Tab#110, t=0.5
37
30
23
LABEL
6.5
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
ABSOLUTE MAXIMUM RATINGS
Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage
(Tj=25C, unless otherwise noted)
Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 150 150 1000 8 1500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.96~2.94 20~30 250 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g
--
Mounting torque Mounting screw M6
--
Weight
Typical value
ELECTRICAL CHARACTERISTICS
Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain
(Tj=25C, unless otherwise noted)
Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=150A, IB=3A -IC=150A (diode forward voltage) IC=150A, VCE=2.8V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=600V, IC=150A, IB1=-IB2=3A -- -- Transistor part Diode part Conductive grease applied -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 200 2.5 3.5 1.8 -- 3.0 15 3.0 0.125 0.6 0.065 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
PERFORMANCE CURVES
COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 200 Tj=25C COLLECTOR CURRENT IC (A) 160 IB=1.5A IB=0.8A IB=0.4A IB=0.2A IB=0.1A 40 DC CURRENT GAIN hFE 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) Tj=25C Tj=125C
120
VCE=5.0V VCE=2.8V
80
0
0
1
2
3
4
5 VCE (V)
COLLECTOR-EMITTER VOLTAGE
VCE (sat), VBE (sat) (V)
COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.8 2.2 2.6 3.0 3.4 VBE (V) 3.8
SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1
BASE CURRENT IB (A)
VCE=2.8V Tj=25C
VBE(sat)
SATURATION VOLTAGE
VCE(sat)
IB=3A Tj=25C Tj=125C 3 4 5 7 10 1 2 3 4 5 7 10 2 23
BASE-EMITTER VOLTAGE
COLLECTOR CURRENT IC (A)
COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4
Tj=25C Tj=125C
SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=-IB2=3A Tj=25C 3 Tj=125C 2 10 1 7 5 3 2
ton, ts, tf (s)
ts
3
SWITCHING TIME
2
IC=200A
1
IC=50A IC=100A IC=150A
0 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE CURRENT IB (A)
tf 10 0 7 ton 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
SWITCHING TIME VS. BASE CURRENT (TYPICAL)
10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10-1 Tj=25C Tj=125C VCC=600V IB1=3A IC=150A
REVERSE BIAS SAFE OPERATING AREA
320
COLLECTOR CURRENT IC (A)
ts, tf (s)
280 IB2=-2A 240 200 160 120 80 40 0 0
Tj=125C
SWITCHING TIME
ts
IB2=-5A
tf
2 3 4 5 7 10 0
2 3 4 5 7 10 1
200
400
600
800
1000
BASE REVERSE CURRENT -IB2 (A)
COLLECTOR-EMITTER VOLTAGE
VCE (V)
FORWARD BIAS SAFE OPERATING AREA
10 3 7 5 3 2 10 2 7 5 3 2 100 90
DERATING FACTOR OF F. B. S. O. A.
COLLECTOR CURRENT IC (A)
tw=50S 100S
S
DERATING FACTOR (%)
1m
80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION
SECOND BREAKDOWN AREA
200 S
10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3
COLLECTOR-EMITTER VOLTAGE
COLLECTOR REVERSE CURRENT -IC (A)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 5 7 10 1 2 3 0.16
0.14 0.12
DC
80 100 120 140 160
VCE (V)
CASE TEMPERATURE
TC (C)
10 7 5 3 2
REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3
Zth (j-c) (C/ W)
0.10 0.08 0.06 0.04 0.02 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0
10 2 7 5 3 2 10 1 7 5 3 2 10 0 0
Tj=25C Tj=125C 0.4 0.8 1.2 1.6 2.0
TIME (s)
COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V)
Feb.1999
MITSUBISHI TRANSISTOR MODULES
QM150HY-2H
HIGH POWER SWITCHING USE
INSULATED TYPE
RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1600 1400 1200 Irr (A), Qrr (c)
REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=-IB2=3A Tj=25C 3 Tj=125C 2 10 2 7 5 3 2 10 2
Irr Qrr 10 1 trr (s)
1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2
trr 10 1 10 0 7 5 3 2 10 -1 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 FORWARD CURRENT IF (A)
CONDUCTION TIME (CYCLES AT 60Hz)
TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0 0.8 Zth (j-c) (C/ W)
0.6
0.4
0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s)
Feb.1999

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