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| MITSUBISHI TRANSISTOR MODULES QM300DY-24B HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24B * * * * * IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................. 750 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM 114 27 M8 25 21.5 2-M6 Dimensions in mm B2X C2E1 E2 B2 6 21 930.3 114 E2 38 E2 7 B1X C1 B1 E1 14 18 14 8 5.5 4-6.5 930.3 4.75(t=0.8) 6.5MIN. 6 2.8(t=0.5) 25 5 20 5 1 6 15 6 20 9.5 B2X E2 31MAX. 37.5 LABEL 21 B2 C2E1 C1 (7) B1X E1 B1 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-24B HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 300 300 1980 16 3000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M8 2500 8.83~10.8 90~110 1.96~2.94 20~30 1.96~2.94 20~30 1100 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm g -- Mounting torque Main terminal screw M6 Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V, Emitter open VEB=7V, Collector open IC=300A, IB=400mA IC=-300A (diode forward voltage) IC=300A, VCE=4.0V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=300A, IB1=0.6A, -IB2=6.0A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 200 4.0 4.0 1.8 -- 2.5 15 3.0 0.063 0.3 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-24B HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 500 Tj=25C 10 4 7 5 4 3 2 10 3 7 5 4 3 2 10 2 10 1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) VCE=4V COLLECTOR CURRENT IC (A) IB=400mA 400 IB=100mA 300 IB=50mA 200 100 DC CURRENT GAIN hFE IB=200mA Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 0 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 2.8 3.2 3.6 4.0 4.4 4.8 VCE=4.0V Tj=25C SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) 10 -1 10 1 IB=400mA Tj=25C Tj=125C 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 VCC=600V 5 IB1=0.6A 3 -IB2=6.0A 2 10 1 7 5 3 2 3 IC=200A 2 IC=100A SWITCHING TIME IC=300A ton, ts, tf (s) ts 1 Tj=25C Tj=125C 0 10 -2 2 3 5 710 -12 3 5 7 10 0 2 3 5 7 10 1 10 0 7 tf 5 3 ton 2 10 -1 10 1 2 3 4 5 7 10 2 Tj=25C Tj=125C 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-24B HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 10 0 VCC=600V IC=300A IB1=0.6A REVERSE BIAS SAFE OPERATING AREA 600 COLLECTOR CURRENT IC (A) ts, tf (s) Tj=125C IB2=-6A 500 400 300 200 100 0 ts SWITCHING TIME tf Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 0 200 400 600 800 1000 1200 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 100 50s 1m DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) 90 200s DERATING FACTOR (%) DC 100s 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR-EMITTER VOLTAGE 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0 10 -3 2 3 5 710 -2 2 3 5 7 10 -1 2 3 5 7 10 0 COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 5 7 10 1 0.08 s 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) Zth (j-c) (C/ W) REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 10 Tj=25C 7 Tj=125C 5 4 3 2 10 2 7 5 4 3 2 10 1 0.2 0.6 1.0 1.4 1.8 2.2 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-24B HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 3200 2800 2400 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 1 10 1 VCC=600V IB1=0.6A -IB2=6.0A Irr 10 1 7 5 4 3 2 10 0 7 5 4 3 2 trr (s) Feb.1999 Qrr trr 2 3 4 5 7 10 2 10 -1 2 3 4 5 7 10 3 Tj=25C Tj=125C CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE PART) 10 0 2 3 5 7 10 1 2 3 4 5 7 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 5 710 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) |
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