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| RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION RS2501M THRU RS2507M SINGLE-PHASE SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 25 Amperes FEATURES * * * * * * Low leakage Low forward voltage Mounting position: Any Surge overload rating: 300 amperes peak Ideal for printed cikcuit boakds High forward surge current capability RS-25M .189 (4.8) 1.193 (30.3) 1.169 (29.7) .197 (5) MECHANICAL DATA * UL listed the recognized component directory, file #E94233 * Epoxy: Device has UL flammability classification 94V-O .150 (3.8) .134 (3.4) .800 (20.3) .697 (17.7) .441 (11.2) .425 (10.8) .173 (4.4) .106 (2.7) .096 (2.3) .094 (2.4) .078 (2.0) .165 (4.2) .150 (3.8) .708 (18.0) .669 (17.0) .114 (2.9) .098 (2.5) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. For capacitive load, derate current by 20%. .043 (1.1) .035 (0.9) .402 (10.2) .386 (9.8) .303 (7.7) .287 (7.3) .303 (7.7) .287 (7.3) .031 (0.8) .023 (0.6) Dimensions in inches and (millimeters) MAXIMUM RATINGS (At TA = 25 oC unless otherwise noted) RATINGS Maximum Recurrent Peak Reverse Voltage Maximum RMS Bridge Input Voltage Maximum DC Blocking Voltage Maximum Average Forward Rectified Output Current at Tc = 100o C with heatsink Peak Forward Surge Current 8.3 ms single half sine-wave superimposed on rated load Operating and Storage Temperature Range TJ,TSTG -55 to + 150 0 SYMBOL VRRM VRMS VDC IO IFSM RS2501M RS2502M RS2503M RS2504M RS2505M RS2506M RS2507M UNITS 50 35 50 100 70 100 200 140 200 400 280 400 25 300 600 420 600 800 560 800 1000 700 1000 Volts Volts Volts Amps Amps C ELECTRICAL CHARACTERISTICS (At TA = 25oC unless otherwise noted) CHARACTERISTICS Maximum Forward Voltage Drop per element at 12.5A DC Maximum Reverse Current at Rated DC Blocking Voltage per element @TA = 25 oC @TC = 100 oC SYMBOL VF IR 0.2 mAmps 2001-5 RS2501M RS2502M RS2503M RS2504M RS2505M RS2506M RS2507M UNITS 1.1 10 Volts uAmps f.134 (3.1) .122 (3.1) RATING AND CHARACTERISTIC CURVES (RS2501M THRU RS2507M) TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS INSTANTANEOUS FORWARD CURRENT, (A) POWER DISSIPATION 60 sine wave Tj=150 30 20 10 5 2 1 0.5 0.2 0.1 0.2 0.4 0.6 0.8 1 pulse test per one diode TC = 150 (TYP) POWER DISSIPATION PF(W) 50 40 TC = 25 (TYP) 30 20 10 0 1.2 1.4 1.6 0 4 8 12 16 20 24 INSTANTANEOUS FORWARD VOLTAGE, (V) SURGE FORWARD CURRENT CAPABILITY PEAK FORWARD SURGE CURRENT, (A) AVERAGE RECTIFIED FORWARD CURRENT, Io (A) TYPICAL FORWARD CURRENT DERATING CURVE 4 AVERAGE FORWARD CURRENT, (A) on glass-epoxi substrate 300 sine wave 0 IFSM 8.3ms 8.3ms 3 250 1 cycle non-repetitive Tj=25 P.C.B soldering land 5mmf sine wave R-load free in air 2 200 1 150 1 2 5 10 20 50 100 0 0 40 80 120 ) 160 NUMBER OF CYCLE TYPICAL FORWARD CURRENT DERATING CURVE 30 AVERAGE FORWARD CURRENT, (A) AMBIENT TEMPERATURE, ( CONTACT THERMAL RESISTANCE fcf 1 with thermal compound 28 26 24 22 20 18 16 14 12 10 80 90 heatsink Tc Tc 0.9 /W) sine wave R-load on heatsink THERMAL RESISTANCE ( 0.8 0.7 0.6 0.5 0.4 100 110 120 130 140 ) 150 160 2 3 4 5 6 7 8 CASE TEMPERATURE, ( MOUNTING TORQUE (Kg.cm) RECTRON |
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