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| (R) STPS20H100CT/CF/CG/CR/CFP HIGH VOLTAGE POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj VF (max) FEATURES AND BENEFITS A2 s 2 x 10 A 100 V 175C 0.64 V A1 K A2 A2 A1 K s s s s s s NEGLIGIBLE SWITCHING LOSSES HIGH JUNCTION TEMPERATURE CAPABILITY GOOD TRADE OFF BETWEEN LEAKAGE CURRENT AND FORWARD VOLTAGE DROP LOW LEAKAGE CURRENT AVALANCHE RATED INSULATED PACKAGE: ISOWATT220AB, TO-220FPAB Insulating Voltage = 2000V DC Capacitance = 45 pF AVALANCHE CAPABILITY SPECIFIED A1 K TO-220AB STPS20H100CT ISOWATT220AB STPS20H100CF A2 K A1 A1 A2 K TO-220FPAB STPS20H100CFP K I2PAK DESCRIPTION Dual center tap schottky rectifier designed for high frequency miniature Switched Mode Power Supplies such as adaptators and on board DC/DC converters. ABSOLUTE RATINGS (limiting values, per diode) Symbol VRRM IF(RMS) IF(AV) RMS forward current Average forward current = 0.5 TO-220AB D2PAK / I2PAK Tc = 160C per diode per device Parameter Repetitive peak reverse voltage Value 100 30 10 20 Unit V A A STPS20H100CR A1 A2 D2PAK STPS20H100CG ISOWATT220AB Tc = 145C TO-220FPAB IFSM IRRM IRSM PARM Tstg Tj dV/dt *: Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum operating junction temperature * Critical rate of rise of reverse voltage tp = 10 ms sinusoidal tp = 2 s square F = 1kHz tp = 100 s square tp = 1s Tj = 25C 250 1 3 10800 - 65 to + 175 175 10000 A A A W C C V/s dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/8 July 2003 - Ed: 4G STPS20H100CT/CF/CG/CR/CFP THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AB / D PAK / I PAK ISOWATT220AB / TO-220FPAB TO-220AB / D PAK / I PAK ISOWATT220AB / TO-220FPAB Rth (c) TO-220AB / D PAK / I PAK ISOWATT220AB / TO-220FPAB When the diodes 1 and 2 are used simultaneously : Tj(diode 1) = P(diode1) x Rth(j-c)(Per diode) + P(diode 2) x Rth(c) STATIC ELECTRICAL CHARACTERISTICS (per diode) Symbol IR * Parameter Reverse leakage current Tests conditions Tj = 25C Tj = 125C VF ** Forward voltage drop Tj = 25C Tj = 25C Tj = 25C Tj = 25C Tj = 125C Tj = 125C Tj = 125C Tj = 125C Pulse test : * tp = 5 ms, < 2% ** tp = 380 s, < 2% 2 2 2 2 2 2 Value Per diode Per diode Total Total Coupling Coupling 1.6 4 0.9 3.2 0.15 2.5 Unit C/W C/W Min. Typ. Max. 4.5 Unit A mA V VR = VRRM 2 IF = 8 A IF = 10 A IF = 16 A IF = 20 A IF = 8 A IF = 10 A IF = 16 A IF = 20 A 0.56 0.59 0.65 0.67 6 0.71 0.77 0.81 0.88 0.58 0.64 0.68 0.73 To evaluate the maximum conduction losses use the following equation : P = 0.55 x IF(AV) + 0.009 x IF2(RMS) 2/8 STPS20H100CT/CF/CG/CR/CFP Fig. 1: Average forward power dissipation versus average forward current (per diode). PF(av)(W) 8 6 4 2 IF(av) (A) 0 0 2 4 6 8 =tp/T T Fig. 2: Average forward current versus ambient temperature (=0.5, per diode). IF(av)(A) = 0.05 = 0.1 = 0.2 = 0.5 12 Rth(j-a)=Rth(j-c) TO220AB 10 =1 8 6 4 2 tp Rth(j-a)=15C/W Rth(j-a)=40C/W ISOWATT220AB TO-220FPAB T =tp/T tp Tamb(C) 50 75 100 125 150 175 0 10 12 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (TO-220AB, D2PAK, I2PAK) IM(A) 200 180 160 140 120 100 80 60 40 IM 20 0 1E-3 Fig. 6: Non repetitive surge peak forward current versus overload duration (maximum values, per diode) (ISOWATT220AB, TO-220FPAB). IM(A) 140 120 100 Tc=50C Tc=75C Tc=125C 80 60 Tj=50C Tj=75C 40 IM 20 t Tj=125C t =0.5 t(s) 1E-2 1E-1 1E+0 0 1E-3 =0.5 t(s) 1E-2 1E-1 1E+0 3/8 STPS20H100CT/CF/CG/CG-1 Fig. 7-1: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (TO-220AB, D2PAK, I2PAK). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 0.2 0.0 1E-3 = 0.5 Fig. 7-2: Relative variation of thermal impedance junction to case versus pulse duration (per diode) (ISOWATT220AB, TO-220FPAB). Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 T = 0.5 = 0.2 = 0.1 Single pulse = 0.2 0.2 tp(s) 1E-2 1E-1 =tp/T tp = 0.1 Single pulse tp(s) 1E+0 0.0 1E-2 1E-1 1E+0 1E+1 Fig. 8: Reverse leakage current versus reverse voltage applied (typical values, per diode). IR(A) Fig. 9: Junction capacitance versus reverse voltage applied (typical values, per diode). C(pF) 1000 1E+4 1E+3 1E+2 1E+1 1E+0 1E-1 1E-2 Tj=150C F=1MHz Tj=25C Tj=125C Tj=100C 500 Tj=25C 200 VR(V) 0 10 20 30 40 50 60 70 80 90 100 100 1 2 5 VR(V) 10 20 50 100 Fig. 10: Forward voltage drop versus forward current (maximum values, per diode). Fig. 11: Thermal resistance junction to ambient versus copper surface under tab (Epoxy printed circuit board FR4, copper thickness: 35m) (D2PAK). Rth(j-a) (C/W) 80 70 100.0 IFM(A) 10.0 Tj=150C Typical values Tj=125C 60 50 40 Tj=25C Tj=125C Typical values 1.0 30 20 10 0.1 0.0 VFM(V) 0.2 0.4 0.6 0.8 1.0 1.2 S(Cu) (cm) 0 5 10 15 20 25 30 35 40 0 4/8 STPS20H100CT/CF/CG/CR/CFP PACKAGE MECHANICAL DATA TO-220AB REF. Min. A H2 Dia L5 C L7 L6 L2 F2 F1 L9 L4 F G1 G M E D A DIMENSIONS Millimeters Max. 4.60 1.32 2.72 0.70 0.88 1.70 1.70 5.15 2.70 10.40 14 2.95 15.75 6.60 3.93 3.85 4.40 1.23 2.40 0.49 0.61 1.14 1.14 4.95 2.40 10 13 2.65 15.25 6.20 3.50 3.75 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.044 0.194 0.094 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.066 0.202 0.106 0.409 0.551 0.116 0.620 0.259 0.154 0.151 C D E F F1 F2 G G1 H2 L2 L4 L5 L6 L7 L9 M Diam. 16.4 typ. 0.645 typ. 2.6 typ. 0.102 typ. 5/8 STPS20H100CT/CF/CG/CR/CFP PACKAGE MECHANICAL DATA ISOWATT220AB DIMENSIONS REF. A B D E F F1 F2 G G1 H L2 L3 L4 L6 L7 Diam PACKAGE MECHANICAL DATA TO-220FPAB REF. DIMENSIONS Millimeters A H B Millimeters Min. Max. 4.40 4.60 2.50 2.70 2.50 2.75 0.40 0.70 0.75 1.00 1.15 1.70 1.15 1.70 4.95 5.20 2.40 2.70 10.00 10.40 16.00 typ. 28.60 30.60 9.80 10.60 15.90 16.40 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.016 0.028 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.394 0.409 0.630 typ. 1.125 1.205 0.386 0.417 0.626 0.646 0.354 0.366 0.118 0.126 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 Dia L6 L2 L3 L5 D F1 L4 F2 L7 F G1 G E A B D E F F1 F2 G G1 H L2 L3 L4 L5 L6 L7 Dia. Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 6/8 STPS20H100CT/CF/CG/CR/CFP PACKAGE MECHANICAL DATA D2PAK DIMENSIONS A E L2 C2 REF. A A1 A2 B B2 C C2 D E G L L2 L3 R V2 Millimeters Min. Typ. Max. Min. Inches Typ. Max. D L L3 A1 B2 B G A2 2.0 MIN. FLAT ZONE V2 C R 4.30 4.60 0.169 0.181 2.49 2.69 0.098 0.106 0.03 0.23 0.001 0.009 0.70 0.93 0.027 0.037 1.25 1.40 0.049 0.055 0.45 0.60 0.017 0.024 1.21 1.36 0.047 0.054 8.95 9.35 0.352 0.368 10.00 10.28 0.393 0.405 4.88 5.28 0.192 0.208 15.00 15.85 0.590 0.624 1.27 1.40 0.050 0.055 1.40 1.75 0.055 0.069 0.40 0.016 0 8 0 8 FOOT PRINT DIMENSIONS (in millimeters) 16.90 10.30 1.30 5.08 3.70 8.90 7/8 STPS20H100CT/CF/CG/CR/CFP PACKAGE MECHANICAL DATA I2PAK DIMENSIONS REF. A A1 b b1 b2 C C2 D e E L L1 L2 Millimeters Min. 4.30 2.49 0.70 1.20 1.25 0.45 1.21 8.95 2.44 10.00 13.10 3.48 1.27 1.40 Typ. Max. Min. 4.60 0.169 2.69 0.098 0.93 0.028 1.38 0.047 0.049 0.055 0.60 0.018 1.36 0.048 9.35 0.352 2.64 0.096 10.28 0.394 13.60 0.516 3.78 0.137 1.40 0.050 0.024 0.054 0.368 0.104 0.405 0.535 0.149 0.055 Inches Typ. Max. 0.181 0.106 0.037 0.054 Ordering type STPS20H100CT STPS20H100CF STPS20H100CFP STPS20H100CR STPS20H100CG STPS20H100CG-TR s Marking STPS20H100CT STPS20H100CF STPS20H100CFP STPS20H100CR STPS20H100CG STPS20H100CG Package TO-220AB ISOWATT220AB TO-220FPAB I PAK D PAK D PAK 2 2 2 Weight 2.20g 2.08g 2.0 g 1.49g 1.48g 1.48g Base qty 50 50 50 50 50 1000 Delivery mode Tube Tube Tube Tube Tube Tape & reel Epoxy meets UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 8/8 |
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