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| (R) STTH12R06D/FP TURBO 2 ULTRAFAST HIGH VOLTAGE RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM IRM (typ.) Tj (max) VF (max) trr (max) FEATURES AND BENEFITS s s 12 A 600 V 7A 175 C 1.8 V 45 ns K A TO-220FPAC STTH12R06FP K s s Ultrafast switching Low reverse recovery current Reduces switching losses Low thermal resistance DESCRIPTION The STTH12R06D/FP, which is using ST Turbo 2 600V technology, is specially suited as boost diode in continuous mode power factor corrections and hard switching conditions. The device is also intended for use as a free wheeling diode in power supplies and other power switching applications. A K TO-220AC STTH12R06D ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM Tstg Tj Parameter Repetitive peak reverse voltage RMS forward current Average forward current Surge non repetitive forward current Storage temperature range Maximum operating junction temperature tp = 10 ms Sinusoidal Value 600 30 12 100 - 65 + 175 + 175 Unit V A A A C C January 2002 - Ed: 1B 1/6 STTH12R06D/FP THERMAL RESISTANCES Symbol Rth (j-c) Junction to case Parameter TO-220AC TO-220FPAC Value 1.7 4.4 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR Parameter Reverse leakage current Forward voltage drop Tests conditions VR = 600V Tj = 25C Tj = 125C IF = 12 A Tj = 25C Tj = 125C To evaluate the maximum conduction losses use the following equation : P = 1.16 x IF(AV) + 0.053 IF2(RMS) 1.4 50 Min. Typ. Max. 45 600 2.9 1.8 V Unit A VF DYNAMIC ELECTRICAL CHARACTERISTICS Symbol trr Tests conditions IF = 0.5 A Irr = 0.25 A IR = 1A IF = 1 A dIF/dt = - 50 A/s VR = 30V IRM S factor Qrr tfr VFP IF = 12 A dIF/dt = 96 A/s VFR = 1.1 x VFmax Tj = 25C VR = 400 V IF = 12A dIF/dt = - 200A/s Tj = 125C 7.0 0.2 180 200 5.5 nC ns V Tj = 25C Min. Typ. Max. 25 45 8.4 A Unit ns 2/6 STTH12R06D/FP Fig. 1: Conduction losses versus average current. P(W) 30 = 0.05 = 0.1 = 0.2 = 0.5 Fig. 2: Forward voltage drop versus forward current. IFM(A) 120 110 25 =1 100 90 80 70 Tj=125C (Maximum values) 20 15 60 50 Tj=125C (Typicalvalues) 10 T 40 30 20 Tj=25C (Maxumim values) 5 IF(av)(A) 0 0 1 2 3 4 5 6 7 8 9 10 11 =tp/T 12 13 tp 10 0 VFM(V) 0 1 2 3 4 5 6 14 15 Fig. 3-1: Relative variation of thermal impedance junction to case versus pulse duration (TO-220AC). Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 = 0.5 Fig. 3-2: Relative variation of thermal impedance junction to case versus pulse duration (TO-220FPAC). Zth(j-c)/Rth(j-c) 1.0 0.9 0.8 0.7 0.6 0.5 = 0.5 0.6 0.5 0.4 0.3 0.2 Single pulse = 0.2 = 0.1 0.4 0.3 T = 0.2 = 0.1 0.2 T 0.1 0.0 1.E-03 1.E-02 tp(s) 1.E-01 =tp/T tp 0.1 Single pulse tp(s) 1.E-02 1.E-01 1.E+00 0.0 1.E-03 =tp/T 1.E+00 tp 1.E+01 Fig. 4: Peak reverse recovery current versus dIF/dt (90% confidence). IRM(A) 30 28 26 24 22 20 18 16 14 12 10 8 6 4 2 0 0 Fig. 5: Reverse recovery time versus dIF/dt (90% confidence). trr(ns) 80 70 60 VR=400V Tj=125C VR=400V Tj=125C IF=2 x IF(av) IF=IF(av) IF=IF(av) IF=0.5 x IF(av) IF=0.25 x IF(av) 50 40 30 20 10 IF=0.5 x IF(av) IF=2 x IF(av) dIF/dt(A/s) 0 dIF/dt(A/s) 800 1000 0 200 400 600 800 1000 200 400 600 3/6 STTH12R06D/FP Fig. 6: Reverse recovery charges versus dIF/dt (90% confidence). Qrr(nC) 600 550 500 450 400 350 300 250 200 150 100 50 0 0 200 400 600 800 1000 0.15 0.25 0.20 IF=0.5 x IF(av) IF=IF(av) VR=400V Tj=125C IF=2 x IF(av) Fig. 7: Softness factor versus dIF/dt (typical values). S factor 0.50 0.45 0.40 0.35 0.30 IF=IF(av) VR=400V Tj=125C dIF/dt(A/s) 0.10 0 200 dIF/dt(A/s) 400 600 800 1000 Fig. 8: Relative variation of dynamic parameters versus junction temperature. Fig. 9: Transient peak forward voltage versus dIF/dt (90% confidence). VFP(V) 2.50 2.25 2.00 1.75 1.50 1.25 1.00 0.75 0.50 0.25 0.00 25 50 75 100 125 Qrr IRM S factor IF=IF(av) VR=400V Tj=125C 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 0 IF=IF(av) Tj=125C Tj(C) Reference: Tj=125C dIF/dt(A/s) 100 200 300 400 500 Fig. 10: Forward recovery time versus dIF/dt (90% confidence). tfr(ns) 500 450 400 350 300 250 200 150 100 50 0 0 100 200 300 400 500 IF=IF(av) VFR=1.1 x VF max. Tj=125C Fig. 11: Junction capacitance versus reverse voltage applied (typical values). C(pF) 100 F=1MHz Vosc=30mV Tj=25C dIF/dt(A/s) 10 1 10 VR(V) 100 1000 4/6 STTH12R06D/FP PACKAGE MECHANICAL DATA TO-220FPAC DIMENSIONS REF. A H B Millimeters Min. Max. 4.4 4.6 2.5 2.7 2.5 2.75 0.45 0.70 0.75 1 1.15 1.70 4.95 5.20 2.4 2.7 10 10.4 16 Typ. 28.6 30.6 9.8 10.6 2.9 3.6 15.9 16.4 9.00 9.30 3.00 3.20 Inches Min. Max. 0.173 0.181 0.098 0.106 0.098 0.108 0.018 0.027 0.030 0.039 0.045 0.067 0.195 0.205 0.094 0.106 0.393 0.409 0.63 Typ. 1.126 1.205 0.386 0.417 0.114 0.142 0.626 0.646 0.354 0.366 0.118 0.126 Dia L6 L2 L3 L5 D F1 L4 L7 F G1 G E A B D E F F1 G G1 H L2 L3 L4 L5 L6 L7 Dia. PACKAGE MECHANICAL DATA TO-220AC DIMENSIONS REF. H2 C L5 OI L6 L2 D L7 A Millimeters Min. Max. 4.60 1.32 2.72 0.70 0.88 1.70 5.15 10.40 14.00 2.95 15.75 6.60 3.93 3.85 4.40 1.23 2.40 0.49 0.61 1.14 4.95 10.00 13.00 2.65 15.25 6.20 3.50 3.75 Inches Min. 0.173 0.048 0.094 0.019 0.024 0.044 0.194 0.393 0.511 0.104 0.600 0.244 0.137 0.147 Max. 0.181 0.051 0.107 0.027 0.034 0.066 0.202 0.409 0.551 0.116 0.620 0.259 0.154 0.151 5/6 A C D E F F1 G L9 F1 L4 H2 L2 L4 L5 E 16.40 typ. 0.645 typ. F G M L6 L7 L9 M Diam. I 2.6 typ. 0.102 typ. STTH12R06D/FP Ordering code STTH12R06D STTH12R06FP s s Marking STTH12R06D STTH12R06FP Package TO-220AC TO-220FPAC Weight 1.9 g 1.7 g Base qty 50 50 Delivery mode Tube Tube s s Cooling method: by conduction (C) Recommended torque value (TO-220AC): 0.55 Nm Maximum torque value (TO-220AC / TO-220FPAC): 0.7 Nm Epoxy meets UL 94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2002 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 6/6 |
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