 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| BDX 65, A, B, C NPN SILICON DARLINGTONS General purpose darlingtons designed for power amplifier and switching applications. ABSOLUTE MAXIMUM RATINGS Symbol VCEO Collector-Emitter Voltage Ratings BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C Value 60 80 100 120 80 100 120 120 5.0 Unit V VCEV Collector-EmitterVoltage VBE=-1.5 V V VEBO Emitter-Base Voltage V IC(RMS) IC Collector Current 12 A 16 ICM IB Base Current 0.2 A PT Power Dissipation @ TC = 25 117 Watts W/C TJ TS Junction Temperature Storage Temperature -55 to +200 C COMSET SEMICONDUCTORS 1/4 BDX 65, A, B, C THERMAL CHARACTERISTICS Symbol RthJ-C Ratings Thermal Resistance, Junction to Case BDX65 BDX65A BDX65B BDX65C Value 1.5 Unit C/W ELECTRICAL CHARACTERISTICS TC=25C unless otherwise noted Symbol Ratings Test Condition(s) Min Typ Mx Unit BDX65 60 - - BDX65A 80 - V VCEO(SUS) Collector-Emitter Breakdown Voltage (*) IC=0.1 A, IB=0, L=25mH BDX65B 100 - - BDX65C 120 - - VCE=30 V BDX65 - - VCE=40 V BDX65A - 1 mA ICEO Collector Cutoff Current VCE=50 V BDX65B - - VCE=60 V BDX65C - - COMSET SEMICONDUCTORS 2/4 BDX 65, A, B, C Symbol Ratings Emitter Cutoff Current Test Condition(s) BDX65 BDX65A BDX65B BDX65C Min Typ Mx Unit IEBO VBE=5 V - - 5.0 mA VCBO=60 V BDX65 - 0.4 VCBO=60 V TCASE=150C - - 3 VCBO=80 V BDX65A - 0.4 ICBO Collector-Base Cutoff Current VCBO=80 V TCASE=150C - - 3 mA VCBO=100 V BDX65B - 0.4 VCBO=100 V TCASE=150C - - 3 VCBO=120 V BDX65C - 0.4 VCBO=120 V TCASE=150 BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C 3 VCE(SAT) Collector-Emitter saturation Voltage (*) IC=5.0 A, IB=20 mA - - 2 V VF Forward Voltage (pulse method) IF=3 A - 1.8 - V VBE Base-Emitter Voltage (*) IC=5.0 A, VCE=3V - - 3 V Fh21e Forward current transfer ratio Cutoff frequency VCE=3 V, IC=5 A - 60 - kHz COMSET SEMICONDUCTORS 3/4 BDX 65, A, B, C Symbol Ratings Test Condition(s) BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C BDX65 BDX65A BDX65B BDX65C Min Typ Mx Unit fT Transition Frequency VCE=3 V, IC=5 A, f=1 MHz - 7 - MHz VCE=3 V, IC=1 A - 1500 - h21E Static forward current transfer ratio (*) VCE=3 V, IC=5 A 1000 - - - VCE=3 V, IC=10 A - 1500 - (*) Pulse Width 300 s, Duty Cycle 2.0% (1) collector-Emitter voltage limited et VCEci = V rated by an auxiliary circuit MECHANICAL DATA CASE TO-3 DIMENSIONS A B C D E G H L M N P Pin 1 : Pin 2 : Case : mm 25,51 38,93 30,12 17,25 10,89 11,62 8,54 1,55 19,47 1 4,06 inches 1,004 1,53 1,18 0,68 0,43 0,46 0,34 0,6 0,77 0,04 0,16 Base Collector Emitter COMSET SEMICONDUCTORS 4/4 |
Price & Availability of BDX65A
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |