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| DSEP 60-06A DSEP 60-06AT HiPerFREDTM Epitaxial Diode with soft recovery Preliminary Data VRSM V 600 VRRM V 600 DSEP 60-06A DSEP 60-06AT Type A C IFAV = 60 A VRRM = 600 V trr = 35 ns TO-247 AD (A-Type) TO-268 AA (AT-Type) C A C (TAB) A A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TVJ = TVJM TC = 110C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 1.6 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 70 60 600 0.3 0.2 -55...+175 175 -55...+150 A A Features A q mJ A C C C W Nm g q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 230 0.8...1.2 6 Applications q q q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 60 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 650 2.5 1.39 2.04 0.65 0.25 mA mA V V K/W K/W ns q q q q q VF y RthJC RthCH trr IRM Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders Advantages q IF = 1 A; -di/dt = 300 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 130 A; -diF/dt = 100 A/ms TVJ = 100C 35 8.3 A q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2000 IXYS All rights reserved 1-2 018 IXYS reserves the right to change limits, test conditions and dimensions. DSEP 60-06A DSEP 60-06AT 160 A 140 IF 120 4000 nC 3000 TVJ= 100C VR = 300V 80 A 60 TVJ= 100C VR = 300V TVJ= 25C 100 Qr 2000 TVJ=100C 80 IF=120A IF= 60A IF= 30A IRM 40 IF=120A IF= 60A IF= 30A TVJ=150C 60 40 20 0 0 1 VF 2 V 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt 1000 20 Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr versus -diF/dt 140 ns 130 Fig. 3 Peak reverse current IRM versus -diF/dt 20 V VFR 15 1.6 s tfr 1.2 2.0 TVJ= 100C VR = 300V 1.5 Kf 1.0 trr 120 110 tfr IF=120A IF= 60A IF= 30A VFR 0.8 10 I RM 100 0.5 5 0.4 Qr 90 80 0 0 200 400 600 -diF/dt 800 A/ms 1000 0 TVJ= 100C IF = 60A 200 400 0.0 600 A/ms 1000 800 diF/dt 0.0 0 40 80 120 C 160 TVJ Fig. 4 Dynamic parameters Qr, IRM versus TVJ 1 K/W 0.1 ZthJC 0.01 Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr versus diF/dt Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.324 0.125 0.201 ti (s) 0.0052 0.0003 0.0385 0.001 0.0001 0.00001 DSEP 60-06A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case 018 NOTE: Fig. 2 to Fig. 6 shows typical values (c) 2000 IXYS All rights reserved 2-2 |
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