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MICRONAS
HAL525, HAL535 Hall Effect Sensor IC
Edition Aug. 30, 2000 6251-465-3DS
MICRONAS
HAL525, HAL535
Contents Page 3 3 3 4 4 4 4 5 6 6 6 6 7 7 8 9 14 14 16 18 18 18 18 18 20 Section 1. 1.1. 1.2. 1.3. 1.4. 1.5. 1.6. 2. 3. 3.1. 3.2. 3.3. 3.4. 3.5. 3.6. 3.7. 4. 4.1. 4.2. 5. 5.1. 5.2. 5.3. 5.4. 6. Title Introduction Features Family Overview Marking Code Operating Junction Temperature Range Hall Sensor Package Codes Solderability Functional Description Specifications Outline Dimensions Dimensions of Sensitive Area Positions of Sensitive Areas Absolute Maximum Ratings Recommended Operating Conditions Electrical Characteristics Magnetic Characteristics Overview Type Description HAL525 HAL535 Application Notes Ambient Temperature Extended Operating Conditions Start-up Behavior EMC and ESD Data Sheet History
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Micronas
HAL525, HAL535
Hall Effect Sensor Family Release Note: Revision bars indicate significant changes to the previous edition. 1.2. Family Overview Both sensors have a latching behavior with typically the same sensitivity. The difference between HAL 525 and HAL535 is the temperature coefficient of the magnetic switching points.
1. Introduction The HAL525 and HAL535 are Hall switches produced in CMOS technology. The sensors include a temperature-compensated Hall plate with active offset compensation, a comparator, and an open-drain output transistor. The comparator compares the actual magnetic flux through the Hall plate (Hall voltage) with the fixed reference values (switching points). Accordingly, the output transistor is switched on or off. The active offset compensation leads to magnetic parameters which are robust against mechanical stress effects. In addition, the magnetic characteristics are constant in the full supply voltage and temperature range. The sensors are designed for industrial and automotive applications and operate with supply voltages from 3.8 V to 24 V in the ambient temperature range from -40 C up to 150 C. The HAL525 and HAL535 are available in the SMD-package SOT-89B and in the leaded version TO-92UA. Type Switching Behavior latching latching Typical Temperature Coefficient -2000 ppm/K -1000 ppm/K see Page 14 16
525 535
Latching Sensors: Both sensors have a latching behavior and requires a magnetic north and south pole for correct functioning. The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied.
1.1. Features - switching offset compensation at typically 115 kHz - operates from 3.8 V to 24 V supply voltage - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - overvoltage protection at all pins - reverse-voltage protection at VDD-pin - magnetic characteristics are robust against mechanical stress effects - short-circuit protected open-drain output by thermal shut down - constant switching points over a wide supply voltage range - the decrease of magnetic flux density caused by rising temperature in the sensor system is compensated by a built-in negative temperature coefficient of the magnetic characteristics - ideal sensor for window lifter, ignition timing, and revolution counting in extreme automotive and industrial environments - EMC corresponding to DIN 40839
Micronas
3
HAL525, HAL535
1.3. Marking Code All Hall sensors have a marking on the package surface (branded side). This marking includes the name of the sensor and the temperature range. 1.6. Solderability all packages: according to IEC68-2-58 During soldering reflow processing and manual reworking, a component body temperature of 260 C should not be exceeded. Components stored in the original packaging should provide a shelf life of at least 12 months, starting from the date code printed on the labels, even in environments as extreme as 40 C and 90% relative humidity.
Type A HAL525 HAL535 525A 535A
Temperature Range K 525K 535K E 525E 535E
1 VDD 3 OUT
1.4. Operating Junction Temperature Range The Hall sensors from Micronas are specified to the chip temperature (junction temperature TJ). A: TJ = -40 C to +170 C K: TJ = -40 C to +140 C E: TJ = -40 C to +100 C The relationship between ambient temperature (TA) and junction temperature is explained in Section 5.1. on page 18.
2 GND
Fig. 1-1: Pin configuration
1.5. Hall Sensor Package Codes HALXXXPA-T Temperature Range: A, K, or E Package: SF for SOT-89B UA for TO-92UA Type: 525 or 535 Example: HAL525UA-E Type: 525 Package: TO-92UA Temperature Range: TJ = -40 C to +100 C Hall sensors are available in a wide variety of packaging versions and quantities. For more detailed information, please refer to the brochure: "Ordering Codes for Hall Sensors".
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Micronas
HAL525, HAL535
2. Functional Description The Hall effect sensor is a monolithic integrated circuit that switches in response to magnetic fields. If a magnetic field with flux lines perpendicular to the sensitive area is applied to the sensor, the biased Hall plate forces a Hall voltage proportional to this field. The Hall voltage is compared with the actual threshold level in the comparator. The temperature-dependent bias increases the supply voltage of the Hall plates and adjusts the switching points to the decreasing induction of magnets at higher temperatures. If the magnetic field exceeds the threshold levels, the open drain output switches to the appropriate state. The built-in hysteresis eliminates oscillation and provides switching behavior of output without bouncing. Magnetic offset caused by mechanical stress is compensated for by using the "switching offset compensation technique". Therefore, an internal oscillator provides a two phase clock. The Hall voltage is sampled at the end of the first phase. At the end of the second phase, both sampled and actual Hall voltages are averaged and compared with the actual switching point. Subsequently, the open drain output switches to the appropriate state. The time from crossing the magnetic switching level to switching of output can vary between zero and 1/fosc. Shunt protection devices clamp voltage peaks at the Output-pin and VDD-pin together with external series resistors. Reverse current is limited at the VDD-pin by an internal series resistor up to -15 V. No external reverse protection diode is needed at the VDD-pin for reverse voltages ranging from 0 V to -15 V.
1 VDD Reverse Voltage & Overvoltage Protection Temperature Dependent Bias Hysteresis Control Short Circuit and Overvoltage Protection
Hall Plate Comparator 3 Switch Output OUT
Clock
2 GND
Fig. 2-1: HAL525, HAL535 block diagram
fosc
t B BON t VOUT VOH VOL t IDD
1/fosc = 9 s
tf
t
Fig. 2-2: Timing diagram
Micronas
5
HAL525, HAL535
3. Specifications 3.1. Outline Dimensions
4.55 0.15 0.3 1.7 2 y
sensitive area 0.2
1.5 0.3
4.06 0.1
sensitive area 0.4
y 3.05 0.1
4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 2 3 0.4
2.55 top view 0.48 0.55 0.36 1 2 3 0.75 0.2 0.42 1.27 1.27 branded side 2.54 branded side 45
SPGS7002-9-A/2E
3.1 0.2 14.0 min. 0.8
1.15
0.06 0.04
SPGS0022-5-A3/2E
Fig. 3-1: Plastic Small Outline Transistor Package (SOT-89B) Weight approximately 0.035 g Dimensions in mm
Fig. 3-2: Plastic Transistor Single Outline Package (TO-92UA) Weight approximately 0.12 g Dimensions in mm
3.2. Dimensions of Sensitive Area 0.25 mm x 0.12 mm 3.3. Positions of Sensitive Areas SOT-89B x y center of the package 0.95 mm nominal TO-92UA center of the package 1.0 mm nominal
Note: For all package diagrams, a mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. The improvement of the TO-92UA package with the reduced tolerances will be introduced end of 2001.
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Micronas
HAL525, HAL535
3.4. Absolute Maximum Ratings Symbol VDD -VP -IDD IDDZ VO IO IOmax IOZ TS TJ
1) 2) 3) 4)
Parameter Supply Voltage Test Voltage for Supply Reverse Supply Current Supply Current through Protection Device Output Voltage Continuous Output On Current Peak Output On Current Output Current through Protection Device Storage Temperature Range Junction Temperature Range
Pin Name 1 1 1 1 3 3 3 3
Min. -15 -242) - -2003) -0.3 - - -2003) -65 -40 -40
Max. 281) - 501) 2003) 281) 501) 2503) 2003) 150 150 1704)
Unit V V mA mA V mA mA mA C C
as long as TJmax is not exceeded with a 220 series resistance at pin 1 corresponding to the test circuit (see Fig. 5-1) t<2 ms t<1000 h
Stresses beyond those listed in the "Absolute Maximum Ratings" may cause permanent damage to the device. This is a stress rating only. Functional operation of the device at these or any other conditions beyond those indicated in the "Recommended Operating Conditions/Characteristics" of this specification is not implied. Exposure to absolute maximum ratings conditions for extended periods may affect device reliability.
3.5. Recommended Operating Conditions Symbol VDD IO VO Parameter Supply Voltage Continuous Output On Current Output Voltage (output switched off) Pin Name 1 3 3 Min. 3.8 0 0 Max. 24 20 24 Unit V mA V
Micronas
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HAL525, HAL535
3.6. Electrical Characteristics at TJ = -40 C to +170 C , VDD = 3.8 V to 24 V, as not otherwise specified in Conditions. Typical Characteristics for TJ = 25 C and VDD = 12 V
Symbol IDD IDD VDDZ VOZ VOL VOL IOH IOH fosc fosc Parameter Supply Current Supply Current over Temperature Range Overvoltage Protection at Supply Overvoltage Protection at Output Pin No. 1 1 1 Min. 2.3 1.6 - - - - - - 95 Typ. 3 3 28.5 Max. 4.2 5.2 32 Unit mA mA V IDD = 25 mA, TJ = 25 C, t = 20 ms IOH = 25 mA, TJ = 25 C, t = 20 ms IOL = 20 mA, TJ = 25 C IOL = 20 mA Output switched off, TJ = 25 C, VOH = 3.8 to 24 V Output switched off, TJ 150 C, VOH = 3.8 to 24V TJ = 25 C, TJ = -30 C to 100 C Conditions TJ = 25 C
3
28
32
V
Output Voltage Output Voltage over Temperature Range Output Leakage Current
3 3
130 130
280 400
mV mV A A kHz
3
0.06 - 115
0.1
Output Leakage Current over Temperature Range Internal Oscillator Chopper Frequency Internal Oscillator Chopper Frequency over Temperature Range Internal Oscillator Chopper Frequency over Temperature Range Enable Time of Output after Setting of VDD Output Rise Time Output Fall Time Thermal Resistance Junction to Substrate Backside
3 - -
10 - -
85
115
kHz
fosc
-
73
115
-
kHz
ten(O)
1
-
30
70
s
VDD = 12 V B > BON + 2 mT or B < BOFF - 2 mT VDD = 12 V, RL = 820 Ohm, CL = 20 pF Fiberglass Substrate 30 mm x 10 mm x 1.5 mm, pad size (see Fig. 3-3)
tr tf RthJSB case SOT-89B RthJA case TO-92UA
3 3 -
- - -
75 50 150
400 400 200
ns ns K/W
Thermal Resistance Junction to Soldering Point
-
-
150
200
K/W
5.0
2.0
2.0
1.0
Fig. 3-3: Recommended pad size SOT-89B Dimensions in mm
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Micronas
HAL525, HAL535
3.7. Magnetic Characteristics Overview at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Sensor Switching Type HAL 525 latching Parameter TJ -40 C 25 C 170 C HAL 535 latching -40 C 25 C 170 C Min. 11.8 11 5 12 11 6 On point BON Typ. 15.8 14 8.5 15 13.8 12 Max. 19.2 17 13 18 17 18 Min. -19.2 -17 -13 -18 -17 -18 Off point BOFF Typ. -15.8 -14 -8.5 -15 -13.8 -12 Max. -11.8 -11 -5 -12 -11 -6 Min. 27.4 24 12 25 23 17 Hysteresis BHYS Typ. 31.6 28 17 30 27.6 24 Max. 35.8 32 25 35 32 31 mT mT mT mT mT mT Unit
Note: For detailed descriptions of the individual types, see pages 14 and following.
Micronas
9
HAL525, HAL535
mA 25 20 IDD 15 10 5 0 -5
HAL 525, HAL 535
mA 5
HAL 525, HAL 535
TA = -40 C TA = 25 C TA = 170 C
IDD
4
3
2 VDD = 3.8 V VDD = 12 V 1 VDD = 24 V
-10 -15 -15-10 -5 0 0 -50
5 10 15 20 25 30 35 V VDD
0
50
100
150 TA
200 C
Fig. 3-4: Typical supply current versus supply voltage
Fig. 3-6: Typical supply current versus ambient temperature
mA 5.0 4.5 IDD 4.0 3.5
HAL 525, HAL 535
kHz 160 140
HAL 525, HAL 535
TA = -40 C TA = 25 C
fosc 120 VDD = 4.5 V...24 V 100 80 60 40
VDD = 3.8 V
3.0 2.5 2.0 1.5 1.0 0.5 0 TA = 100 C TA = 170 C
20 0 -50
1
2
3
4
5
6 VDD
7
8V
0
50
100
150 TA
200 C
Fig. 3-5: Typical supply current versus supply voltage
Fig. 3-7: Typ. internal chopper frequency versus ambient temperature
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Micronas
HAL525, HAL535
mV 400 350 VOL 300
HAL 525, HAL 535
IO = 20 mA
mV 400
HAL 525, HAL 535
IO = 20 mA VDD = 3.8 V
VOL 300 TA = 170 C 250 200 150 100 50 0 0 -50 TA = 100 C 200
VDD = 4.5 V VDD = 24 V
TA = 25 C TA = -40 C 100
0
5
10
15
20
25 VDD
30 V
0
50
100
150 TA
200 C
Fig. 3-8: Typical output low voltage versus supply voltage
Fig. 3-10: Typical output low voltage versus ambient temperature
mV 600
HAL 525, HAL 535
IO = 20 mA
A 104 103
HAL 525, HAL 535
VOL
500
IOH 102 101 TA = 170 C TA = 150 C
400 100 300 10-1 10-2 200 TA =100 C TA = 25 C 100 TA = -40 C 10-3 10-4 10-5 0 3 4 5 6 VDD 7V 10-6 15
TA = 100 C
TA = 170 C
TA = 25 C
TA = -40 C
20
25
30 VOH
35 V
Fig. 3-9: Typical output low voltage versus supply voltage
Fig. 3-11: Typ. output high current versus output voltage
Micronas
11
HAL525, HAL535
A 102
HAL 525, HAL 535
dBV 80 70 VDD 60 50
HAL 525, HAL 535
VP = 12 V TA = 25 C Quasi-PeakMeasurement test circuit
101 IOH 100
10-1 VOH = 24 V 40 30 10-3 VOH = 3.8 V 20 10-4 10 0 0.01
max. spurious signals
10-2
10-5 -50
0
50
100
150 TA
200 C
0.10
1.00 1
10.00 100.00 1000.00 10 100 1000 MHz f
Fig. 3-12: Typical output leakage current versus ambient temperature
Fig. 3-14: Typ. spectrum of supply voltage
dBA 30
HAL 525, HAL 535
VDD = 12 V TA = 25 C Quasi-PeakMeasurement max. spurious signals
IDD
20
10
0
-10
-20
-30 0.01
0.10
1.00 1
10.00 100.00 1000.00 10 100 1000 MHz f
Fig. 3-13: Typ. spectrum of supply current
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Micronas
HAL525, HAL535
Micronas
13
HAL525
4. Type Description 4.1. HAL525 The HAL525 is a latching sensor (see Fig. 4-1). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Applications The HAL525 is the optimal sensor for applications with alternating magnetic signals such as: - multipole magnet applications, - rotating speed measurement, - commutation of brushless DC motors, and - window lifter.
Output Voltage VO BHYS
Magnetic Features: - switching type: latching - low sensitivity - typical BON: 14 mT at room temperature - typical BOFF: -14 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -2000 ppm/K BOFF 0 BON
VOL B
Fig. 4-1: Definition of magnetic switching points for the HAL525
Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 11.8 11 8 6.5 5 On point BON Typ. 15.8 14 11 10 8.5 Max. 19.2 17 15.5 14 13 Off point BOFF Min. -19.2 -17 -15.5 -14 -13 Typ. -15.8 -14 -11 -10 -8.5 Max. -11.8 -11 -8 -6.5 -5 Hysteresis BHYS Min. 27.4 24 18.5 16 12 Typ. 31.6 28 22 20 17 Max. 35.8 32 28.7 26 25 -2 Magnetic Offset Min. Typ. 0 0 0 0 0 2 Max. mT mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
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Micronas
HAL525
mT 20 15 10 5 0 -5 -10 -15 -20
HAL525
BON
mT 20 BONmax BON BOFF 15 10 5 0 -5 -10 -15 BOFFmin -20 -50 BONmin VDD = 3.8 V VDD = 4.5 V...24 V BOFFmax
HAL525
BON BOFF
BONtyp
TA = -40 C TA = 25 C TA = 100 C TA = 170 C BOFF
BOFFtyp
0
5
10
15
20
25 VDD
30 V
0
50
100
150 TA, TJ
200 C
Fig. 4-2: Typ. magnetic switching points versus supply voltage
Fig. 4-4: Magnetic switching points versus temperature
mT 20 15 10 5 0 -5 -10 -15 -20
HAL525
BON
Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF
TA = -40 C TA = 25 C TA = 100 C TA = 170 C BOFF
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 4-3: Typ. magnetic switching points versus supply voltage
Micronas
15
HAL535
4.2. HAL535 The HAL535 is a latching sensor (see Fig. 4-5). The output turns low with the magnetic south pole on the branded side of the package and turns high with the magnetic north pole on the branded side. The output does not change if the magnetic field is removed. For changing the output state, the opposite magnetic field polarity must be applied. For correct functioning in the application, the sensor requires both magnetic polarities (north and south) on the branded side of the package. Applications The HAL535 is the optimal sensor for applications with alternating magnetic signals such as: - multipole magnet applications, - rotating speed measurement, - commutation of brushless DC motors, and - window lifter.
Output Voltage VO BHYS
Magnetic Features: - switching type: latching - low sensitivity - typical BON: 13.5 mT at room temperature - typical BOFF: -13.5 mT at room temperature - operates with static magnetic fields and dynamic magnetic fields up to 10 kHz - typical temperature coefficient of magnetic switching points is -1000 ppm/K BOFF 0
VOL BON B
Fig. 4-5: Definition of magnetic switching points for the HAL535
Magnetic Characteristics at TJ = -40 C to +170 C, VDD = 3.8 V to 24 V, Typical Characteristics for VDD = 12 V Magnetic flux density values of switching points. Positive flux density values refer to the magnetic south pole at the branded side of the package.
Parameter TJ -40 C 25 C 100 C 140 C 170 C Min. 12 11 9 7 6 On point BON Typ. 15 13.8 13 12.5 12 Max. 18 17 17 17 18 Off point BOFF Min. -18 -17 -17 -17 -18 Typ. -15 -13.8 -13 -12.5 -12 Max. -12 -11 -9 -7 -6 Hysteresis BHYS Min. 25 23 20 18 17 Typ. 30 27.6 26 25 24 Max. 35 32 31.5 31 31 Magnetic Offset Min. Typ. 0 0 0 0 0 Max. mT mT mT mT mT Unit
The hysteresis is the difference between the switching points BHYS = BON - BOFF The magnetic offset is the mean value of the switching points BOFFSET = (BON + BOFF) / 2
16
Micronas
HAL535
mT 20 BON 15 BOFF 10 5 0 -5 -10 -15 -20
HAL 535
BON
mT 20 BONmax BON 15 BOFF 10 BONmin 5 0 -5 BOFFmax -10
HAL 535
BONtyp
TA = -40 C TA = 25 C TA = 100 C TA = 170 C BOFF
VDD = 3.8 V VDD = 4.5 V... 24 V
BOFFtyp -15 BOFFmin 0 5 10 15 20 25 VDD 30 V -20 -50 0 50 100 150 TA, TJ 200 C
Fig. 4-6: Typ. magnetic switching points versus supply voltage
Fig. 4-8: Magnetic switching points versus temperature
mT 20 15 10 5 0 -5 -10 -15 -20
HAL 535
BON
Note: In the diagram "Magnetic switching points versus ambient temperature" the curves for BONmin, BONmax, BOFFmin, and BOFFmax refer to junction temperature, whereas typical curves refer to ambient temperature.
BON BOFF
TA = -40 C TA = 25 C TA = 100 C TA = 170 C BOFF
3
3.5
4.0
4.5
5.0
5.5 VDD
6.0 V
Fig. 4-7: Typ. magnetic switching points versus supply voltage
Micronas
17
HAL525, HAL535
5. Application Notes 5.1. Ambient Temperature Due to the internal power dissipation, the temperature on the silicon chip (junction temperature TJ) is higher than the temperature outside the package (ambient temperature TA). TJ = TA + T At static conditions, the following equation is valid: T = IDD * VDD * Rth For typical values, use the typical parameters. For worst case calculation, use the max. parameters for IDD and Rth, and the max. value for VDD from the application. For all sensors, the junction temperature range TJ is specified. The maximum ambient temperature TAmax can be calculated as: TAmax = TJmax - T 5.2. Extended Operating Conditions
2 GND
5.4. EMC and ESD For applications with disturbances on the supply line or radiated disturbances, a series resistor and a capacitor are recommended (see Fig. 5-1). The series resistor and the capacitor should be placed as closely as possible to the HAL sensor. Applications with this arrangement passed the EMC tests according to the product standards DIN 40839). Note: The international standard ISO 7637 is similar to the used product standard DIN 40839. Please contact Micronas for the detailed investigation reports with the EMC and ESD results.
RV 220 1 VEMC VP 4.7 nF VDD OUT 3 20 pF RL 1.2 k
All sensors fulfill the electrical and magnetic characteristics when operated within the Recommended Operating Conditions (see page 7). Supply Voltage Below 3.8 V Typically, the sensors operate with supply voltages above 3 V, however, below 3.8 V some characteristics may be outside the specification. Note: The functionality of the sensor below 3.8 V is not tested. For special test conditions, please contact Micronas.
Fig. 5-1: Test circuit for EMC investigations
5.3. Start-up Behavior Due to the active offset compensation, the sensors have an initialization time (enable time ten(O)) after applying the supply voltage. The parameter ten(O) is specified in the Electrical Characteristics (see page 8). During the initialization time, the output state is not defined and the output can toggle. After ten(O), the output will be low if the applied magnetic field B is above BON. The output will be high if B is below BOFF. For magnetic fields between BOFF and BON, the output state of the HAL sensor after applying VDD will be either low or high. In order to achieve a well-defined output state, the applied magnetic field must be above BONmax, respectively, below BOFFmin.
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Micronas
HAL525, HAL535
Micronas
19
HAL525, HAL535
6. Data Sheet History 1. Final data sheet: "HAL525 Hall Effect Sensor IC", April 23, 1997, 6251-465-1DS. First release of the final data sheet. 2. Final data sheet: "HAL525 Hall Effect Sensor IC", March 10, 1999, 6251-465-2DS. Second release of the final data sheet. Major changes: - additional package SOT-89B - outline dimensions for SOT-89A and TO-92UA changed - electrical characteristics changed - section 4.2.: Extended Operating Conditions added - section 4.3.: Start-up Behavior added 3. Final data sheet: "HAL525, HAL535 Hall Effect Sensor Family", Aug. 30, 2000, 6251-465-3DS. Third release of the final data sheet. Major changes: - new sensor HAL 535 added - outline dimensions for SOT-89B: reduced tolerances - SMD package SOT-89A removed - temperature range "C" removed
Micronas GmbH Hans-Bunte-Strasse 19 D-79108 Freiburg (Germany) P.O. Box 840 D-79008 Freiburg (Germany) Tel. +49-761-517-0 Fax +49-761-517-2174 E-mail: docservice@micronas.com Internet: www.micronas.com Printed in Germany Order No. 6251-465-3DS
All information and data contained in this data sheet are without any commitment, are not to be considered as an offer for conclusion of a contract, nor shall they be construed as to create any liability. Any new issue of this data sheet invalidates previous issues. Product availability and delivery are exclusively subject to our respective order confirmation form; the same applies to orders based on development samples delivered. By this publication, Micronas GmbH does not assume responsibility for patent infringements or other rights of third parties which may result from its use. Further, Micronas GmbH reserves the right to revise this publication and to make changes to its content, at any time, without obligation to notify any person or entity of such revisions or changes. No part of this publication may be reproduced, photocopied, stored on a retrieval system, or transmitted without the express written consent of Micronas GmbH.
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Micronas
HAL 11x, HAL 5xx, HAL 62x
Data Sheet Supplement
Subject: Data Sheet Concerned:
Improvement of SOT-89B Package HAL 114, 115, 6251-456-2DS, Dec. 20, 1999 HAL 50x, 51x, 6251-485-1DS, Feb. 16, 1999 HAL 55x, 56x, 6251-425-1DS, April 6, 1999 HAL 621, 629, 6251-504-1DS, Feb. 3, 2000 No. 1/ 6251-531-1DSS July 4, 2000
Supplement: Edition:
Changes: - position tolerance of the sensitive area reduced - tolerances of the outline dimensions reduced
- thickness of the leadframe changed to 0.15 mm (old 0.125 mm) - SOT-89A will be discontinued in December 2000
sensitive area 4.55 0.15 0.3 1.7 2 y 0.2
4 0.2 min. 0.25 1 0.4 0.4 1.5 3.0 2 3 0.4
2.55 top view
1.15
branded side
0.06 0.04
SPGS0022-5-A3/2E
Position of sensitive area HAL 114, 115 HAL 50x, 51x HAL 621, 629 x y center of the package 0.95 mm nominal HAL 55x, HAL 56x
center of the package 0.85 mm nominal
Note: A mechanical tolerance of 0.05 mm applies to all dimensions where no tolerance is explicitly given. Position tolerance of the sensitive area is defined in the package diagram.
Micronas
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