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DUAL CHANNEL
ILD1/2/5 QUAD CHANNEL ILQ1/2/5
PHOTOTRANSISTOR OPTOCOUPLER
FEATURES * Current Transfer Ratio at IF=10 mA ILD/Q1, 20% Min. ILD/Q2, 100% Min. ILD/Q5, 50% Min. * High Collector-Emitter Voltage ILD/Q1: BVCEO=50 V ILD/Q2, ILD/Q5: BVCEO=70 V * Field-Effect Stable by TRansparent IOn Shield (TRIOS) Isolation Test Voltage, 5300 VACRMS * Underwriters Lab File #E52744 V * VDE 0884 Available with Option 1 DE Maximum Ratings (Each Channel) Emitter Reverse Voltage ................................................6 V Forward Current ...........................................60 mA Surge Current ................................................. 2.5 A Power Dissipation.......................................100 mW Derate Linearly from 25C..................... 1.3 mW/C Detector Collector-Emitter Reverse Voltage ILD/Q1 ........................................................... 50 V ILD/Q2, ILD/Q5...............................................70 V Collector Current .......................................... 50 mA Collector Current (t<1 ms)...........................400 mA Power Dissipation.......................................200 mW Derate Linearly from 25C......................2.6 mW/C Package Isolation Test Voltage (between emitter and detector referred to standard climate 23C/50%RH, DIN 50014) .................................... 5300 VACRMS Creepage ............................................... min. 7 mm Clearance............................................... min. 7 mm Isolation Resistance VIO=500 V, TA=25C ......................... RIO=1012 VIO=500 V, TA=100C ....................... RIO=1011 Package Power Dissipation ...................... 250 mW Derate Linearly from 25C..................... 3.3 mW/C Storage Temperature................... -40C to +150C Operating Temperature ................-40C to +100C Junction Temperature.................................... 100C Soldering Temperature (2 mm from case bottom) .......................... 260C
Dimensions in inches (mm) Dual Channel
Pin One I.D. 4 3 2 1 Anode 1 .268 (6.81) .255 (6.48) Cathode 2 Cathode 3 5 6 7 8 .390 (9.91) .379 (9.63) .045 (1.14) .030 (.76) Anode 4 .305 Typ. (7.75) Typ. .150 (3.81) .130 (3.30) 4 Typ. .022 (.56) .018 (.46) .040 (1.02) .030 (.76 ) .100 (2.54) Typ. 10 Typ. 3-9 .012 (.30) .008 (.20) Pin One I.D. .135 (3.43) .115 (2.92) 8 Emitter 7 Collector 6 Collector 5 Emitter
Quad Channel
Anode 1 16 Emitter 15 Collector 14 Collector 13 Emitter 12 Emitter 11 Collector 10 Collector 9 Emitter .305 Typ. (7.75) Typ. .135 (3.43) .115 (2.92) 10 Typ. .040 (1.02) .030 (.76 ) .100 (2.54) Typ. 3-9 .012 (.30) .008 (.20) Cathode 2 Cathode 3 .268 (6.81) .255 (6.48) Anode 4 Anode 5 Cathode 6 .790 (20.07) .779 (19.77 ) .045 (1.14) .030 (.76) Cathode 7 Anode 8 .150 (3.81) .130 (3.30)
4 Typ. .022 (.56) .018 (.46)
DESCRIPTION The ILD/Q1/2/5 are optically coupled isolated pairs employing GaAs infrared LEDs and silicon NPN phototransistor. Signal information, including a DC level, can be transmitted by the drive while maintaining a high degree of electrical isolation between input and output. The ILD/Q1/2/5 are especially designed for driving medium-speed logic and can be used to eliminate troublesome ground loop and noise problems. Also these couplers can be used to replace relays and transformers in many digital interface applications such as CRT modulation. The ILD1/2/5 has two isolated channels in a single DIP package and the ILQ1/2/5 has four isolated channels per package.
See Appnote 45, "How to Use Optocoupler Normalized Curves."
5-1
Characteristics
Symbol Emitter Forward Voltage Reverse Current Capacitance Thermal Resistance, Junction to Lead Detector Capacitance Leakage Current, Collector-Emitter Saturation Voltage, Collector-Emitter DC Forward Current Gain Saturated DC Forward Current Gain Thermal Resistance, Junction to Lead CCE ICEO VCESAT HFE HFESAT RTHJL 200 120 6.8 5 0.25 650 400 500 50 0.4 1800 600 C/W pF nA VCE=5 V, f=1 MHz VCE=10 V ICE=1 mA, IB=20 A VCE= 10 V, IB=20 A VCE= 0.4 V, IB=20 A VF IR C0 RTHJL 1.25 0.01 25 750 1.65 10 V A pF C/W IF=60 mA VR=6 V VR=0 V, f=1 MHz Min. Typ. Max. Unit Condition
Package Transfer Characteristics (Each Channel)
Symbol ILD/Q1 Saturated Current Transfer Ratio (Collector-Emitter) Current Transfer Ratio (Collector-Emitter) ILD/Q2 Saturated Current Transfer Ratio (Collector-Emitter) Current Transfer Ratio (Collector-Emitter) ILD/Q5 Saturated Current Transfer Ratio (Collector-Emitter) Current Transfer Ratio (Collector-Emitter) Isolation and Insulation Common Mode Rejection, Output High Common Mode Rejection, Output Low Common Mode Coupling Capacitance Package Capacitance CMH CML CCM CIO 5000 5000 0.01 0.8 V/s V/s pF pF VIO=0 V, f=1 MHz VCM=50 VP-P, RL=1 k, IF=0 mA VCM=50 VP-P, RL=1 k, IF=10 mA CTRCESAT CTRCE 50 100 130 400 % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE =10 V CTRCESAT CTRCE 100 170 200 500 % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=10 V CTRCESAT CTRCE 20 75 90 300 % % IF=10 mA, VCE=0.4 V IF=10 mA, VCE=10 V Min. Typ. Max. Unit Condition
ILD/Q1/2/5
5-2
Typical Switching Times Figure 1. Non-saturated switching timing
VCC=5 V IF=10 mA VO F=10 KHz, DF=50% RL=75 Characteristic Delay, tD Rise time, tR Storage, tS Fall Time, tF ILD/Q1 IF=20 mA 0.8 1.9 0.2 1.4 0.7 1.4 ILD/Q2 IF=5 mA 1.7 2.6 0.4 2.2 1.2 2.3 ILD/Q5 IF=10 mA 1.7 2.6 0.4 2.2 1.1 2.5 Unit s s s s s s VCE=5 V RL=75 k 50% of VPP Condition
Figure 2. Non-saturated switching timing
IF
Propagation H-L, tPHL Propagation L-H, tPLH
Characteristic t PHL tS 50% Delay, tD Rise time, tR Storage, tS Fall Time, tF tD tR tF Propagation H-L, tPHL Propagation L-H, tPLH
ILD/Q1 IF=20 mA 0.8 1.2 7.4 7.6 1.6 8.6
ILD/Q2 IF=5 mA 1 2 5.4 13.5 5.4 7.4
ILD/Q5 IF=10 mA 1.7 7 4.6 20 2.6 7.2
Unit
Condition
VO
t PLH
s s s s s s
VCE=0.4 V RL=1 k VCC=5 V VTH=1.5 V
Figure 3. Saturated switching timing
F=10 KHz, DF=50% IF=10 mA VCC=5 V RL VO
Figure 5. Normalized non-saturated and saturated CTR at TA=25C versus LED current
1.4
Vf-Forward Voltage - V
1.3 1.2 1.1 1.0 0.9 0.8 0.7 .1
Ta = -55C
Ta = 25C
Figure 4. Saturated switching timing
IF
Ta = 100C
If - Forward Current - mA
1
10
100
tD VO tR t PLH VTH =1.5 V tF
Figure 6. Normalized non-saturated and saturated CTR at TA=25C versus LED current
CTRNF - Normalized CTR Factor
1.5
1.0
Normalized to: Vce = 10V, IF = 10mA Ta = 25C CTRce(sat) Vce = 0.4V
t PHL
tS
0.5 NCTR(SAT) NCTR 0.0 .1 1 10 100
IF - LED Current - mA
ILD/Q1/2/5
5-3
Figure 7. Normalized non-saturated and saturated CTR at TA=50C versus LED current
1.5 CTRNF - Normalized CTR Factor Normalized to: Vce = 10V, IF = 10mA, Ta = 25C CTRce(sat) Vce = 0.4V 1.0 Ta = 50C
Figure 10. Collector-emitter current versus temperature and LED current
35
Ice - Collector Current - mA
30 25 20 15 10 5 0 0 10 20 30 40 IF - LED Current - mA 50 60 25C 85C 70C 50C
0.5 NCTR(SAT) NCTR 0.0 .1 1 10 IF - LED Current - mA 100
Figure 8. Normalized non-saturated and saturated CTR at TA=70C versus LED current
1.5 CTR - Normalized CTR Factor Normalized to: Vce = 10V, IF = 10mA Ta = 25C CTRce(sat) Vce = 0.4V
Figure 11. Collector-emitter leakage current versus temperature
Iceo - Collector-Emitter - nA
10 5 10 4 10 3 10 2 10 1 10 0 10 -1
1.0
Vce = 10V TYPICAL
0.5 Ta = 70C NCTR(SAT) NCTR 0.0 .1 1 10 IF - LED Current - mA 100
10 -2 -20
Ta - Ambient Temperature - C
0
20
40
60
80
100
Figure 9. Normalized non-saturated and saturated CTR at TA=85C versus LED current
1.5 NCTR - Normalized CTR Normalized to: Vce = 10V, IF = 10mA, Ta = 25C CTRce(sat) Vce = 0.4V
Figure 12. Propagation delay versus collector load resistor
tPLH - Propagation Low-High - s
Ta = 25C, IF = 10mA Vcc = 5V, Vth = 1.5V
tPLH 100 2.0
1.0
0.5 Ta = 85C NCTR(SAT) NCTR 1 10 IF - LED Current - mA 100
10 tPHL
1.5
0.0 .1
1 .1 1 10
1.0 100
RL - Collector Load Resistor - K
tPHL - Propagation High-Low - s
ILD/Q1/2/5
1000
2.5
5-4

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