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KSP92/93
KSP92/93
High Voltage Transistor
1
TO-92
1. Emitter 2. Base 3. Collector
PNP Epitaxial Silicon Transistor
Absolute Maximum Ratings Ta=25C unless otherwise noted
Symbol VCBO Parameter Collector-Base Voltage : KSP92 : KSP93 VCEO Collector-Emitter Voltage : KSP92 : KSP93 VEBO IC PC PC TJ TSTG Emitter-Base Voltage Collector Current Collector Power Dissipation (Ta=25C) Derate above 25C Collector Power Dissipation (TC=25C) Derate above 25C Junction Temperature Storage Temperature -300 -200 -5 -500 625 5 1.5 12 150 -55 ~ 150 V V V mA mW mW/C W mW/C C C -300 -200 V V Value Units
Electrical Characteristics Ta=25C unless otherwise noted
Symbol BVCBO Parameter Collector-Base Breakdown Voltage : KSP92 : KSP93 * Collector-Emitter Breakdown Voltage : KSP92 : KSP93 Emitter-Base Breakdown Voltage Collector Cur-off Current : KSP92 : KSP93 IEBO hFE Emitter Cut-off Current * DC Current Gain VCB= -200V, IE=0 VCB= -160V, IE=0 VEB= -3V, IC=0 VCE= -10V, IC= -1mA VCE= -10V, IC= -10mA VCE= -10V, IC= -30mA IC= -20mA, IB= -2mA IC= -20mA, IB= -2mA VCE= -20V, IC= -10mA, f=100MHz VCB= -20V, IE=0 f=1MHz 50 6 8 25 40 25 -0.50 -0.90 V V MHz pF pF -0.25 -0.25 -0.10 A A A Test Condition IC= -100A, IE=0 Min. -300 -200 IC= -1mA, IB=0 -300 -200 IE= -100A, IC=0 -5 V V V Max. Units V V
BVCEO
BVEBO ICBO
VCE (sat) VBE (sat) fT Cob
*Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Current Gain Bandwidth Product Output Capacitance : KSP92 : KSP93
* Pulse Test: PW300s, Duty Cycle2%
(c)2001 Fairchild Semiconductor Corporation
Rev. A1, July 2001
KSP92/93
Typical Characteristics
VBE(sat), VCE(sat)[mV], SATURATION VOLTAGE
1000
-10000
VCE = -10V
IC = 10 IB
hFE, DC CURRENT GAIN
100
-1000
VBE(sat)
VCE(sat)
-100
10
1 -1 -10 -100 -1000
-10 -1 -10 -100 -1000
IC[mA], COLLECTOR CURRENT
IC[mA], COLLECTOR CURRENT
Figure 1. DC current Gain
Figure 2. Saturation Voltage
100
1000
fT[MHz], CURRENT GAIN BANDWIDTH PRODUCT
Cib [pF], Cob [pF], CAPACITANCE
VCE = -20V f = 100MHz
Cib
10
100
Cob
1 -0.1
-1
-10
-100
10 -1 -10 -100
VCB [V], COLLECTOR-BASE VOLTAGE
IC[mA], COLLECTOR CURRENT
Figure 3. Capacitance
Figure 4. Current Gain Bandwidth Product
-500
100
IC[mA], COLLECTOR CURRENT
s 1m
s
dc
-100
KSP93 1.5 WATT THERMAL LIMITATION@TC=25 625mW THERMAL LIMITATION@TA=25 BONDING WIRE LIMITATION
-10
SECOND BREAKDOWN LIMITATION T j=150
-3 -10 -100 -400
-5
VCE [V], COLLECTOR-EMITTER VOLTAGE
Figure 5. Active-Regio Safe Operating Area
(c)2001 Fairchild Semiconductor Corporation
KSP92
Rev. A1, July 2001
KSP92/93
Package Demensions
TO-92
4.58 -0.15
+0.25
0.46
14.47 0.40
0.10
4.58 0.20
1.27TYP [1.27 0.20] 3.60
0.20
1.27TYP [1.27 0.20]
0.38 -0.05
+0.10
3.86MAX
1.02 0.10
0.38 -0.05
+0.10
(R2.29)
(0.25)
Dimensions in Millimeters
(c)2001 Fairchild Semiconductor Corporation Rev. A1, July 2001
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM
ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM
FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM
PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM
StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM
STAR*POWER is used under license
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user.
PRODUCT STATUS DEFINITIONS Definition of Terms
Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only.
Preliminary
No Identification Needed
Full Production
Obsolete
Not In Production
(c)2001 Fairchild Semiconductor Corporation
Rev. H3

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