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 RLS245
Diodes
Switching diode
RLS245
!Applications High voltage switching General purpose rectification !External dimensions (Units : mm)
!Features 1) Small surface mounting type. (LLDS) 2) VRM=250V guaranteed. 3) High reliability
CATHODE BAND (WHITE) 0.4 0.4
1.40.1
+0.2 3.4 -0.1
1.5Max.
!Construction Silicon epitaxial planar
ROHM : LLDS EIAJ : - JEDEC : LL-34
!Absolute maximum ratings (Ta=25C)
Parameter Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 250 220 625 200 1000 300 175 -65~+175 Unit V V mA mA mA mW C C
Peak reverse voltage DC reverse voltage
Peak forward current
Mean rectifying current
Surge current (1s) Power dissipation
Junction temperature Storage temperature
!Electrical characteristics (Ta=25C)
Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. - - - - Typ. - - - - Max. 1.5 10 3 75 Unit V A pF ns IF=200mA VR=220V VR=0V, f=1MHz IF=20mA, IR =20mA, RL=50 Conditions
RLS245
Diodes
!Electrical characteristic curves (Ta=25C)
200 100
10
50 20 10 5 2 1 0.5 0.2 0
CAPACITANCE BETWEEN TERMINALS : CT (pF)
100C
1.1
FORWARD CURRENT : IF (mA)
REVERSE CURRENT : IR (A)
1.0
75C
1
0.9
50C
0.8
5C
100n
Ta=25C
Ta=1 2
75C 25C -25C
0.7
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE : VF (V)
10n 0
50
100
150
200
250
300
350
0.6 0
1
2
3
4
5
REVERSE VOLTAGE : VR (V)
REVERSE VOLTAGE : VR (V)
Fig. 1 Forward characteristics
Fig. 2 Reverse characteristics
Fig. 3 Capacitance between terminals characteristics
140
REVERSE RECOVERY TIME : trr (ns)
SURGE CURRENT : Isurge (A)
120 100 80 60 40 20 0 0
IR=10mA Irr=1mA
14 12 10 8 6 4 2 0
5
10
15
20
25
30
35
1
10
100
1000
FORWARD CURRENT : IF (mA)
PULSE WIDTH : Tw (ms)
Fig. 4 Reverse recovery time characteristics
Fig.5 Surge current characteristics
0.01F
D.U.T.
5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE
Fig. 6 Reverse recovery time (trr) measurement circuit


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