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SHINDENGEN Super Fast Recovery Rectifiers Single SF8L60 600V 8A FEATURES Voltage *oe trr70ns *oe Fully Isolated Molding *oe Dielectric strength 2kV guaranteed APPLICATION *oe PFC *oe Switching power supply *oe Free Wheel *oe CTV+B output, lighting *oe High OUTLINE DIMENSIONS Case : FTO-220 (Unit : mm) RATINGS *oeAbsolute Maximum Ratings (If not specified Tc=25*Z) Item Symbol Conditions Ratings Storage Temperature Tstg -55*150 Operating Junction Temperature Tj 150 Maximum Reverse Voltage V RM 600 Average Rectified Forward Current 50Hz sine wave, R-load, Tc=118*Z IO 8 Peak Surge Forward Current IFSM50Hz sine wave, Non-repetitive 1 cycle peak value, Tj=25*Z 170 Dielectric Strength Vdis Terminals to case, AC 1 minute 2 Mounting Torque TOR (Recommended torque*0.3Nm) F 0.5 *oeElectrical Characteristics (If not specified Tc=25*Z) Item Symbol Conditions Forward Voltage V IF F =8A, Pulse measurement Reverse Current IR V=V Pulse measurement R RM, Reverse Recovery Time =0.5A,*@ I =1A trr IF R Thermal Resistance AEjc junction to case Ratings Max.1.5 Max.25 Max.70 Max.2.5 Unit *Z *Z V A A kV Nm Unit V EA ns *Z/W Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd SF8L60 Forward Voltage 10 Forward Current IF [A] Tc=150C [MAX] Tc=150C [TYP] Tc=25C [MAX] Tc=25C [TYP] 1 Pulse measurement per diode 0.1 0 0.4 0.8 1.2 1.6 2 2.4 2.8 Forward Voltage VF [V] SF8L60 20 Forward Power Dissipation Forward Power Dissipation PF [W] DC D=0.8 15 SIN 0.3 0.2 10 0.1 0.05 0.5 5 0 0 2 4 6 8 10 12 14 16 Average Rectified Forward Current IO [A] Tj = Tjmax IO 0 tp D=tp /T T SF8L60 16 Derating Curve Average Rectified Forward Current IO [A] 14 DC 12 D=0.8 10 8 6 4 2 0 0.5 SIN 0.3 0.2 0.1 0.05 0 20 40 60 80 100 120 140 160 Case Temperature Tc [C] VR = VRM 0 0 IO VR tp D=tp /T T SF8L60 350 Peak Surge Forward Capability IFSM 10ms 10ms 300 1 cycle Peak Surge Forward Current IFSM [A] non-repetitive, sine wave, Tj=25C before surge current is applied 250 200 150 100 50 0 1 2 5 10 20 50 100 Number of Cycles [cycles] SF8L60 Junction Capacitance f=1MHz Tc=25C TYP per diode 1000 Junction Capacitance Cj [pF] 100 1 10 100 Reverse Voltage VR [V] |
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