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| N-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.1 (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 23 Package Applications Notebook PCs Cellular and portable phones On - board power supplies Li - ion battery systems General Description The XP151A13A0MR is a N-Channel Power MOS FET with low on state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a gate protect diode is built-in. The small SOT-23 package makes high density mounting possible. Features Low on-state resistance : Rds (on) = 0.1 ( Vgs = 4.5V ) Rds (on) = 0.14 ( Vgs = 2.5V ) Rds (on) = 0.25 ( Vgs = 1.5V ) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage : 1.5V High density mounting : SOT - 23 Pin Configuration Pin Assignment D 3 u PIN NUMBER 1 2 3 PIN NAME G S D FUNCTION Gate Source Drain 1 G 2 S SOT - 23 Top View Equivalent Circuit 3 Absolute Maximum Ratings Ta=25 OC PARAMETER Drain - Source Voltage Gate - Source Voltage Drain Current (DC) Drain Current (Pulse) Reverse Drain Current Continuous Channel SYMBOL Vdss Vgss Id Idp Idr Pd Tch Tstg RATINGS 20 +8 1 4 1 0.5 150 -55 to 150 UNITS V V A A A W O 1 2 Power Dissipation (note) Channel Temperature Storage Temperature C C O N - Channel MOS FET ( 1 device built-in ) ( note ) : When implemented on a ceramic PCB Electrical Characteristics DC characteristics PARAMETER Drain Cut-off Current Gate-Source Leakage Current Gate-Source Cut-off Voltage Drain-Source On-state Resistance (note) Forward Transfer Admittance ( note ) Body Drain Diode Forward Voltage ( note ) : Effective during pulse test. | Yfs | Vf SYMBOL Idss Igss Vgs (off ) Rds ( on ) CONDITIONS Vds = 20 , Vgs = 0V Vgs = 8 , Vds = 0V Id = 1mA , Vds = 10V Id = 0.5A , Vgs = 4.5V Id = 0.5A , Vgs = 2.5V Id = 0.1A , Vgs = 1.5V Id = 0.5A , Vds = 10V If = 1A , Vgs = 0V 0.5 0.075 0.1 0.17 4.2 0.8 1.1 MIN TYP MAX 10 10 1.2 0.1 0.14 0.25 Ta=25C UNITS A A V S V Dynamic characteristics PARAMETER Input Capacitance Output Capacitance Feedback Capacitance SYMBOL Ciss Coss Crss Vds = 10V , Vgs = 0V f = 1 MHz CONDITIONS MIN TYP 220 120 45 MAX Ta=25C UNITS pF pF pF u Switching characteristics PARAMETER Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time SYMBOL td ( on ) tr td ( off ) tf Vgs = 5V , Id = 0.5A Vdd = 10V CONDITIONS MIN TYP 10 15 75 65 MAX Ta=25C UNITS ns ns ns ns Thermal characteristics PARAMETER Thermal Resistance ( channel - surroundings ) SYMBOL Rth ( ch - a ) CONDITIONS Implement on a ceramic PCB MIN TYP 250 MAX UNITS C / W XP151A13A0MR Electrical Characteristics Drain Current vs. Drain/Source Voltage Drain Current vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Gate/Source Voltage Drain/Source On-State Resistance vs. Drain Current u Drain/Source On-State Resistance vs. Ambient Temp. Gate/Source Cut Off Voltage Variance vs. Ambient Temp. XP151A13A0MR Electrical Characteristics u |
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