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| Power Transistors 2SC5243 Silicon NPN triple diffusion mesa type For horizontal deflection output 20.00.5 Unit: mm 3.30.2 5.00.3 3.0 6.0 s Features q q q 1.5 1.5 Solder Dip s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Peak collector current Peak base current Collector power TC=25C dissipation Ta=25C Junction temperature Storage temperature *Non-repetitive 20.00.5 2.5 2.00.3 3.00.3 1.00.2 (TC=25C) Ratings 1700 1700 6 15 30 10 200 3.5 150 -55 to +150 Unit V V V A A A W C C 2.70.3 Symbol VCBO VCES VEBO IC ICP* IBP PC Tj Tstg 0.60.2 5.450.3 10.90.5 1 2 3 1:Base 2:Collector 3:Emitter TOP-3L Package peak s Electrical Characteristics Parameter Collector cutoff current Emitter cutoff current Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Storage time Fall time (TC=25C) Symbol ICBO IEBO hFE VCE(sat) VBE(sat) fT tstg tf Conditions VCB = 1700V, IE = 0 VEB = 5V, IC = 0 VCE = 5V, IC = 10A IC = 10A, IB = 2.8A IC = 10A, IB = 2.8A VCE = 10V, IC = 0.1A, f = 0.5MHz IC = 12A, IB1 = 2.4A, IB2 = -4.8A, Resistance loaded 3 1.5 0.12 2.5 0.2 5 min typ max 1 50 12 3 1.5 V V MHz s s Unit A A 2.0 1.5 High breakdown voltage, and high reliability through the use of a glass passivation layer High-speed switching Wide area of safe operation (ASO) 26.00.5 10.0 2.0 4.0 3.0 1 Power Transistors PC -- Ta 240 16 (1) TC=Ta (2) With a 100 x 100 x 2mm Al heat sink (3) Without heat sink (PC=3.0W) TC=25C 14 2SC5243 IC -- VCE 1000 VCE=5V hFE -- IC Collector power dissipation PC (W) 220 200 180 160 140 120 100 80 60 40 (1) 12 10 8 Forward current transfer ratio hFE Collector current IC (A) IB=1000mA 800mA 600mA 400mA 100 TC=100C 25C 10 -25C 200mA 6 4 2 0 1 (3) 20 0 0 20 40 60 80 100 120 140 160 (2) 0 2 4 6 8 10 12 0.1 0.01 0.1 1 10 Ambient temperature Ta (C) Collector to emitter voltage VCE (V) Collector current IC (A) VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) 100 30 10 3 1 0.3 0.1 0.03 0.01 0.1 TC=-25C 25C 100C 100 VBE(sat) -- IC Base to emitter saturation voltage VBE(sat) (V) IC/IB=3.5 IC/IB=3.5 Area of safe operation, horizontal operation ASO 50 f=64kHz, TC=25C Area of safe operation for the single pulse load curve due to discharge in the high-voltage rectifier tube during horizontal operation 10 Collector current IC (A) 40 30 1 TC=-25C 25C 100C 20 0.1 10 <1mA 0.01 0.1 0 1 10 100 0 400 800 1200 1600 2000 0.3 1 3 10 30 100 Collector current IC (A) Collector current IC (A) Collector to emitter voltage VCE (V) Rth(t) -- t 1000 Note: Rth was measured at Ta=25C and under natural convection (1) PT=10V x 0.3A (3W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink 100 (1) Thermal resistance Rth(t) (C/W) 10 (2) 1 0.1 0.01 10-4 10-3 10-2 10-1 1 10 102 103 104 Time t (s) 2 |
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