 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| 2SK2906-01 FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 7,8m 100A 150W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 100 400 30 1268.3 150 150 -55 ~ +150 L=0.169mH,Vcc=24V Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol BV DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) Test conditions ID=1mA VGS=0V ID=10mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=30V VDS=0V ID=50A ID=50A VGS=10V VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V VGS=10V ID=100A RGS=10 Tch=25C L = 100H IF=100A VGS=0V Tch=25C IF=50A VGS=0V -dI/dt=100A/s Tch=25C Min. 60 2,5 Typ. 3,0 10 0,2 10 5,7 55 5400 2100 550 29 200 160 150 1,0 85 0,21 Max. 3,5 500 1,0 100 7,8 8100 3150 830 50 350 240 230 1,5 fs iss oss rss d(on) r d(off) f AV SD rr rr 25 100 Unit V V A mA nA m m S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance R R th(ch-c) th(ch-a) Symbol channel to case channel to ambient Min. Typ. Max. 0,83 35,0 Unit C/W C/W N-channel MOS-FET 60V 2SK2906-01 FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=50A; VGS=10V 7,8m 100A 150W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] 1 RDS(ON) [m] 2 ID [A] 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=10mA; VDS=VGS RDS(ON) [m] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=100A; TC=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; Tch=25C C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Maximum Avalanche Energy vs. starting Tch Eas=f(starting Tch): VCC=24V; IAV 100A Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Transient Thermal impedance EAV [mJ] 10 ID [A] 12 Zth(ch-c) [K/W] Zthch=f(t) parameter:D=t/T starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! N-channel MOS-FET 60V 2SK2906-01 FAP-IIIB Series Typical Switching Characteristics t=f(ID): VCC = 30V, VGS = 10V, RG = 10 7,8m 100A 150W > Characteristics t [ns] VSD [V] Power Dissipation PD=f(TC) 125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150 Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 120 100 IAV / IAVmax [%] 80 60 40 20 0 0 25 50 75 starting Tch [C] 100 125 150 This specification is subject to change without notice! |
Price & Availability of 2SK2906-01
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |