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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SK3298
SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
DESCRIPTION
The 2SK3298 is N-channel MOS FET device that features a low gate charge and excellent switching characteristics, designed for high voltage applications such as switching power supply, AC adapter.
ORDERING INFORMATION
PART NUMBER 2SK3298 PACKAGE Isolated TO-220
FEATURES
*Low gate charge QG = 34 nC TYP. (VDD = 450 V, VGS = 10 V, ID = 7.5 A) *Gate voltage rating 30 V *Low on-state resistance RDS(on) = 0.75 MAX. (VGS = 10 V, ID = 4.0 A) *Avalanche capability ratings *Isolated TO-220 package
ABSOLUTE MAXIMUM RATINGS (TA = 25C)
Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) (TC = 25C) Drain Current (Pulse)
Note1
VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg
600 30 7.5 30 2.0 40 150 -55 to +150 7.5 37.5
V V A A W W C C A mJ
Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy
Note2
IAS EAS
Note2
Notes 1. PW 10 s, Duty Cycle 1 % 2. Starting Tch = 25 C, VDD = 150 V, RG = 25 , VGS = 20 V 0 V
The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for availability and additional information.
Document No. D14059EJ1V0DS00 (1st edition) Date Published April 2000 NS CP(K) Printed in Japan
The mark 5 shows major revised points.
(c)
1999, 2000
2SK3298
ELECTRICAL CHARACTERISTICS(TA = 25C)
CHARACTERISTICS Drain Leakage Current Gate Leakage Current Gate Cut-off Voltage Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on) Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr TEST CONDITIONS VDS = 600 V, VGS = 0 V VGS = 30 V, VDS = 0 V VDS = 10 V, ID = 1 mA VDS = 10 V, ID = 4.0 A VGS = 10 V, ID = 4.0 A VDS = 10 V VGS = 0 V f = 1 MHz ID = 4.0 A VGS(on) = 10 V VDD = 150 V RG = 10 ID = 7.5 A VDD = 450 V VGS = 10 V IF = 7.5 A, VGS = 0 V IF = 7.5 A, VGS = 0 V di/dt = 50 A/s 2.5 3.2 0.67 1580 280 25 27 14 66 24 34 8.2 12.3 1.0 1.6 9.0 0.75 MIN. TYP. MAX. 100 100 3.5 UNIT
A
nA V S pF pF pF ns ns ns ns nC nC nC V
s C
5
TEST CIRCUIT 1 AVALANCHE CAPABILITY
D.U.T. RG = 25 PG. VGS = 20 0 V BVDSS VDS VGS 0 50 L VDD
TEST CIRCUIT 2 SWITCHING TIME
D.U.T. RL PG. RG VDD ID
90 % 90 %
VGS VGS
Wave Form
0
10 %
VGS(on)
90 %
IAS ID VDD
ID ID
Wave Form
0 10 %
10 %
= 1 s Duty Cycle 1 %
td(on) ton
tr td(off)
toff
tf
Starting Tch
TEST CIRCUIT 3 GATE CHARGE
D.U.T. IG = 2 mA 50 RL VDD
PG.
2
Data Sheet D14059EJ1V0DS00
2SK3298
5 TYPICAL CHARACTERISTICS (TA = 25 C)
DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 30 25 Pulsed VGS = 10 V
FORWARD TRANSFER CHARACTERISTICS 100 Tch = -25C 25C VDS = 10 V Pulsed
ID - Drain Current - A
20 6.0 V 15 10 5 0 0 10 20 30 40 VDS - Drain to Source Voltage - V
ID - Drain Current - A
8.0 V
10 Tch = 75C 125C 1.0
0.1
0 0 5 10 15 VGS - Gate to Source Voltage - V
GATE TO SOURCE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE
VGS(off) - Gate to Source Cut-off Voltage - V
5.0
FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT
| yfs | - Forward Transfer Admittance - S
VDS = 10 V ID = 1 mA 4.0
100 Tch = -25C 25C 75C 125C
VDS = 10 V Pulsed
3.0
10
2.0
1.0
1.0
0
-50
0
50
100
150
Tch - Channel Temperature - C
0.1 0.1
1.0
10
100
ID - Drain Current - A
RDS (on) - Drain to Source On-State Resistance -
RDS(on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE Pulsed 3.0
DRAIN TO SOURCE ON-STATE RESISTANCE vs. DRAIN CURRENT 4.0
3.0 VGS = 10 V 2.0
2.0
ID = 7.5 A 4.0 A
1.0
1.0
20 V
Pulsed 0 0 1 10 100
0
0
5
10
15
VGS - Gate to Source Voltage - V
ID - Drain Current - A
Data Sheet D14059EJ1V0DS00
3
2SK3298
RDS (on) - Drain to Source On-State Resistance -
DRAIN TO SOURCE ON-STATE RESISTANCE vs. CHANNEL TEMPERATURE
SOURCE TO DRAIN DIODE FORWARD VOLTAGE Pulsed
ISD - Diode Forward Current - A
3.0 ID = 7.5 A 4.0 A 2.0
100
10
1.0 VGS = 10 V 0V
1.0 VGS = 10 V Pulsed 100 150
0.1
0 -50
0
50
0
0
0.5
1
1.5
Tch - Channel Temperature - C
VSD - Source to Drain Voltage - V
CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10000 Ciss 1000
td(on), tr, td(off), tf - Switching Time - ns Ciss, Coss, Crss - Capacitance - pF
100
SWITCHING CHARACTERISTICS td(off) tf td(on)
10
100
Coss
tr 1 VDD = 150 V VGS(on) = 10 V RG = 10 1 10 ID - Drain Current - A 100
10 VGS = 0 V f = 1MHz 1 10 100 Crss 1000
1 0.1
0.1 0.1
VDS - Drain to Source Voltage - V REVERSE RECOVERY TIME vs. DRAIN CURRENT 10
trr - Reverse Recovery Time - s VDS - Drain to Source Voltage - V
600
1
VDD = 450 V 300 V 150 V VGS
12 10 8 6
400
0.1
200 VDS 0 0
4 2 20 30 0 40
0.01 0.1
1
10
100
10
ID - Drain Current - A
QG - Gate Charge - nC
4
Data Sheet D14059EJ1V0DS00
VGS - Gate to Source Voltage - V
di/dt = 50 A/ s VGS = 0 V
DYNAMIC INPUT/OUTPUT CHARACTERISTICS 800 16 ID = 7.5 A 14
2SK3298
DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 100 40
TOTAL POWER DISSIPATION vs. CASE TEMPERATURE
dT - Percentage of Rated Power - %
80
PT - Total Power Dissipation - W
20 40 60 80 100 120 140 160
30
60
20
40
20
10
0 0
0
0
20
40
60
80
100
120 140
160
Tch - Channel Temperature - C
TC - Case Temperature - C
FORWARD BIAS SAFE OPERATING AREA 100 ID(pulse)
ID - Drain Current - A
10
RD
) on S(
d ite Lim ID(DC)
30 m s
PW
10 0 s
=1 0 s
1
Po we r
1m 3m s s 10 m s
0.1 1
TC = 25C Single Pulse 10
10 0m Di ss s ipa tio n Lim ite d
100
1000
VDS - Drain to Source Voltage - V
TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH
r th (t) - Transient Thermal Resistance - C/W
100
Rth(ch-A) = 62.5 C/W
10 Rth(ch-C) = 3.13 C/W 1
0.1
Single Pulse
0.01 10
100
1m
10 m
100 m
1
10
100
1000
PW - Pulse Width - s
Data Sheet D14059EJ1V0DS00
5
2SK3298
SINGLE AVALANCHE ENERGY vs. INDUCTIVE LOAD 100
120
SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = 150 V RG = 25 VGS = 20 V 0 V IAS 7.5 A
IAS - Single Avalanche Energy - A
10
IAS = 7.5 A
Energy Derating Factor - %
100 80 60 40 20 0 25
EAS
=3
7.5
mJ
1.0 RG = 25 VDD = 150 V VGS = 20 V 0 V Starting Tch = 25C 100 1m 10 m L - Inductive Load - H
0.1 10
50
75
100
125
150
Starting Tch - Starting Channel Temperature - C
PACKAGE DRAWING (Unit : mm)
Isolated TO-220 (MP-45F)
10.00.3 4.50.2 2.70.2
3.20.2
15.00.3
30.1
EQUIVALENT CIRCUIT
12.00.2
Drain (D)
40.2
13.5 MIN.
Gate (G)
Body Diode
0.70.1 2.54 TYP.
1.30.2 1.50.2 2.54 TYP. 0.650.1
2.50.1
Source (S)
1.Gate 2.Drain 3.Source 123
Remark
Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred.
6
Data Sheet D14059EJ1V0DS00
2SK3298
[MEMO]
Data Sheet D14059EJ1V0DS00
7
2SK3298
* The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Corporation. NEC Corporation assumes no responsibility for any errors which may appear in this document. * NEC Corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. No license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Corporation or others. * Descriptions of circuits, software, and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software, and information in the design of the customer's equipment shall be done under the full responsibility of the customer. NEC Corporation assumes no responsibility for any losses incurred by the customer or third parties arising from the use of these circuits, software, and information. * While NEC Corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. To minimize risks of damage or injury to persons or property arising from a defect in an NEC semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. * NEC devices are classified into the following three quality grades: "Standard", "Special", and "Specific". The Specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. The recommended applications of a device depend on its quality grade, as indicated below. Customers must check the quality grade of each device before using it in a particular application. Standard: Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots Special: Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) Specific: Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. The quality grade of NEC devices is "Standard" unless otherwise specified in NEC's Data Sheets or Data Books. If customers intend to use NEC devices for applications other than those specified for Standard quality grade, they should contact an NEC sales representative in advance.
M7 98. 8

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